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author:

Chen, Peiqi (Chen, Peiqi.) [1] | Wang, Kun (Wang, Kun.) [2] | Chen, Jingjing (Chen, Jingjing.) [3] | Xu, Hailong (Xu, Hailong.) [4] | Zhang, Yongai (Zhang, Yongai.) [5] (Scholars:张永爱) | Wu, Chaoxing (Wu, Chaoxing.) [6] (Scholars:吴朝兴) | Zhou, Xiongtu (Zhou, Xiongtu.) [7] (Scholars:周雄图) | Liu, Zhiqiang (Liu, Zhiqiang.) [8] | Guo, Tailiang (Guo, Tailiang.) [9] (Scholars:郭太良)

Indexed by:

EI SCIE

Abstract:

Since the luminance of Micro-LEDs is highly dependent on the injected current density, inevitable voltage fluctuations will lead to luminance fluctuations and weak luminance robustness. In this work, Micro-LED chips working in non-electrical contact and non-carrier injection (NEC and NCI) mode is proposed, which is totally different from the current-injected mode. The luminance of NEC and NCI Micro-LEDs first increases with the increase of the voltage, and the saturation luminance can be obtained during a relatively large voltage range, which is defined as an operating voltage window. Then the luminance decreases when the voltage is further increased. It is demonstrated that the operating voltage windows can enhance luminance robustness. Finally, the insulating layer that is crucial for the operating voltage windows is optimized. And the working mechanisms related to the existence of operating voltage windows are discussed.

Keyword:

Alternating current Electrodes Light emitting diodes luminance robustness Micro-LED non-carrier injection operating voltage windows Quantum well devices Radiative recombination Robustness Voltage Voltage measurement

Community:

  • [ 1 ] [Chen, Peiqi]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 2 ] [Wang, Kun]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 3 ] [Chen, Jingjing]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 4 ] [Xu, Hailong]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 5 ] [Zhang, Yongai]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 6 ] [Wu, Chaoxing]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 7 ] [Zhou, Xiongtu]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 8 ] [Guo, Tailiang]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 9 ] [Zhang, Yongai]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Peoples R China
  • [ 10 ] [Wu, Chaoxing]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Peoples R China
  • [ 11 ] [Zhou, Xiongtu]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Peoples R China
  • [ 12 ] [Guo, Tailiang]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Peoples R China
  • [ 13 ] [Liu, Zhiqiang]Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China

Reprint 's Address:

  • 吴朝兴

    [Wu, Chaoxing]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China

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Source :

IEEE TRANSACTIONS ON ELECTRON DEVICES

ISSN: 0018-9383

Year: 2021

Issue: 1

Volume: 69

Page: 212-215

3 . 2 2 1

JCR@2021

2 . 9 0 0

JCR@2023

ESI Discipline: ENGINEERING;

ESI HC Threshold:105

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 14

SCOPUS Cited Count: 16

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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