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学者姓名：吴朝兴
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光场显示具有数据量小、结构简单、易于集成化等优点,使其在军事、医学、教育、娱乐等领域具有巨大的应用潜力.然而,全彩色、大视角、高分辨率、大景深的光场显示受限于高分辨率显示器、光调制器、智能算法、超高速计算机等技术的发展.近年来,人们致力于探索新的设计策略、新的器件结构和潜在的应用.综述了三维(3D)显示技术的发展与分类以凸显出光场显示的优势;阐述了光场显示的概念与意义;介绍了光场显示中的集成成像光场显示、投影光场显示和层光场显示的发展及主要技术挑战.强调了在新形势下对光场显示的新要求,并提出对中国发展光场显示的建议,即加强技术创新平台建设,推动光场显示与其他前沿技术的融合,重点攻克关键技术和产业链瓶颈,促进产学研合作,以确保在全球高科技领域的竞争力.
Keyword ：
3D显示 3D显示 光场显示 光场显示 层光场显示 层光场显示 投影光场显示 投影光场显示 集成成像光场显示 集成成像光场显示
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| GB/T 7714 | 彭玉颜 , 康家欣 , 周雄图 et al. 光场显示研发进展 [J]. | 科技导报 , 2025 , 43 (2) : 34-41 . |
| MLA | 彭玉颜 et al. "光场显示研发进展" . | 科技导报 43 . 2 (2025) : 34-41 . |
| APA | 彭玉颜 , 康家欣 , 周雄图 , 张永爱 , 郭太良 , 吴朝兴 . 光场显示研发进展 . | 科技导报 , 2025 , 43 (2) , 34-41 . |
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Developing micro- and nano-scaled full-color pixelation is crucial for advancing future display technologies. Transmission metasurface structural color (TMSC) shows promise for integrated displays due to its high resolution and stability. However, improving the color gamut and tunability of TMSC remains a challenge. In this study, we modified the conventional single-metal metagrating (Ag-Al2O3) by replacing the Ag grating layer with an Al-Al2O3-Ag hybrid grating layer. This novel TMSC based on the mixed metagrating achieves unique transmission spectra under TM polarization light, featuring a single peak with minimal sidebands, and near-zero transmission under TE polarization light. This design enables ultra-high color purity and switchable colors through polarization adjustment. The metagrating effectively blocks transmission sidebands by leveraging interactions between the top Al grating layer and the Al2O3 sandwich grating layer. Under TM polarization light, the TMSC using this mixed metagrating covers an expansive color gamut-173% sRGB space and 124% Adobe RGB space-nearly achieving full hue and high purity. Conversely, under TE polarization light, the TMSC based on the mixed metagrating achieves near-zero transmission, ideal for a perfect dark mode. Moreover, the proposed TMSC design allows for full hue adjustment of individual pixels by varying the incident angle under TM polarization light. Under TE polarization light, the dark mode remains stable regardless of incident angle variations. The metagrating holds significant potential for applications in displays, high-density information storage, optical encryption, and beyond.
Keyword ：
Dynamic display Dynamic display Full colorization Full colorization Large color gamut Large color gamut Metagrating Metagrating Transmission metasurface structural color Transmission metasurface structural color
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| GB/T 7714 | Zhang, Jiawei , Peng, Yuyan , Zou, Zhenyou et al. Ultraly high saturation and high contrast tunable transmission metagrating structural color for dynamic display [J]. | OPTICS COMMUNICATIONS , 2025 , 577 . |
| MLA | Zhang, Jiawei et al. "Ultraly high saturation and high contrast tunable transmission metagrating structural color for dynamic display" . | OPTICS COMMUNICATIONS 577 (2025) . |
| APA | Zhang, Jiawei , Peng, Yuyan , Zou, Zhenyou , Weng, Shuchen , Yang, Weiquan , Zhou, Xiongtu et al. Ultraly high saturation and high contrast tunable transmission metagrating structural color for dynamic display . | OPTICS COMMUNICATIONS , 2025 , 577 . |
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The wavelength tunable and environmentally friendly InP quantum dots are considered one of the most powerful alternatives to cadmium-based quantum dots, and the luminescent devices prepared with them also show great potential. There is still room for improvement in the synthesis methods and device applications of InP based quantum dots. In this work, we report one pot synthesis route for InP/ZnSe/ZnSeS/ZnS green QDs based on tris (dimethylamino)phosphine (DMP) phosphorus by using the strategy of multi shell coating and gradient heating to reduce surface defects of quantum dots. The shell structure, dosage, and growth temperature have all been taken into account in order to explore better performance of InP QDs. The synthesized green quantum dots have 86 % PLQY and a full width at half maximum of 36 nm. In addition, the synthesized green InP quantum dots are applied in AC QLED devices. The experimental results show that the luminescence intensity is affected by the driving voltage and frequency, which is similar to the working mode of non-carrier-injected emitting devices. And there is a matching value between the voltage and frequency.
Keyword ：
Alternating current Alternating current Aminophosphine Aminophosphine Indium phosphide Indium phosphide Quantum dots Quantum dots Single-terminal carrier-injection Single-terminal carrier-injection
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| GB/T 7714 | Lin, Jianpu , Zhang, Shengjie , Du, Lingfeng et al. Improved InP/ZnSe/ZnSeS/ZnS quantum dots for single-terminal carrier-injection light-emitting devices [J]. | OPTICAL MATERIALS , 2025 , 159 . |
| MLA | Lin, Jianpu et al. "Improved InP/ZnSe/ZnSeS/ZnS quantum dots for single-terminal carrier-injection light-emitting devices" . | OPTICAL MATERIALS 159 (2025) . |
| APA | Lin, Jianpu , Zhang, Shengjie , Du, Lingfeng , Zhang, Baiquan , Zhou, Xiongtu , Zhang, Yongai et al. Improved InP/ZnSe/ZnSeS/ZnS quantum dots for single-terminal carrier-injection light-emitting devices . | OPTICAL MATERIALS , 2025 , 159 . |
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以超高密度Cu/Sn微凸点和Cu/SnAg微凸点为研究对象,采用COMSOL软件建立仿真模型,研究了不同焊料凸点高度对键合可靠性的影响;采用电镀法制备Cu/Sn凸点阵列和Cu/SnAg凸点阵列,重点对界面处金属间化合物(Intermetallic compounds,IMC)进行研究.结果表明,Cu/SnAg凸点高度的增加有利于降低凸点键合界面应力,从而提高芯片键合可靠性.金属凸点尺寸越小,界面处金属间化合物生长越快,空洞数量越多.雾锡凸点的晶粒尺寸大于亮锡凸点,而且晶界数量较少,使得凸点界面上IMC的生长速度较慢.因此,雾锡凸点能够有效减少凸点界面空洞的形成,SnAg合金替代纯锡材料可以进一步减少凸点界面空洞的形成.通过优化工艺条件,成功制备出点间距为8 μm,像素阵列为1 920×1 080的超高密度Cu/SnAg金属凸点.
Keyword ：
Cu/SnAg凸点 Cu/SnAg凸点 Cu/Sn凸点 Cu/Sn凸点 电镀 电镀 金属间化合物 金属间化合物
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| GB/T 7714 | 罗灿琳 , 林畅 , 曾煌杰 et al. 电镀法制备超高密度Cu/Sn凸点和Cu/SnAg凸点及其微观形貌研究 [J]. | 光电子技术 , 2025 , 45 (1) : 10-17 . |
| MLA | 罗灿琳 et al. "电镀法制备超高密度Cu/Sn凸点和Cu/SnAg凸点及其微观形貌研究" . | 光电子技术 45 . 1 (2025) : 10-17 . |
| APA | 罗灿琳 , 林畅 , 曾煌杰 , 张永爱 , 孙捷 , 严群 et al. 电镀法制备超高密度Cu/Sn凸点和Cu/SnAg凸点及其微观形貌研究 . | 光电子技术 , 2025 , 45 (1) , 10-17 . |
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As the core component of a nanopixel light-emitting display, the GaN-based nanoscale light-emitting diode (nLED) faces the problem of low electroluminescence efficiency resulting from the introduction of surface defects when its lateral size is reduced to the nanometer scale. Thus, reducing the surface defect density is an important direction in nLED-related research. This study, with the triboelectric nanogenerator-driven LED as its inspiration, reveals that surface defects have a positive impact on the performance of nLEDs driven by Maxwell's displacement current, and we call the related driving mode the noncarrier injection mode. Through finite element simulations, we studied the dynamic variations of the carrier concentration, the energy band, and the light emission rate to analyze the impact of the behavior of surface defect excitation on device performance. We found that surface defects can act as electron pumps under the combined effect of the reverse electric field and the built-in electric field and can generate carriers through surface defect excitation to increase the intensity of noncarrier injection luminescence, which is completely different from the traditional understanding of surface defects. In addition, we propose a tapered structure to further increase the light emission rate by regulating the behaviors of radiation recombination and surface defect excitation. The results of this work open a new perspective on the impacts of surface defects on nLEDs and provide significant information for additional applications of Maxwell's displacement current. © 2024 Elsevier Ltd
Keyword ：
Maxwell's displacement current Maxwell's displacement current Nano-electronics Nano-electronics Nano-light-emitting diodes Nano-light-emitting diodes Noncarrier injection mode Noncarrier injection mode Surface defects Surface defects
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| GB/T 7714 | Li, W. , Zhang, S. , Wang, K. et al. Positive impact of surface defects on Maxwell's displacement current-driven nano-LEDs: The application of TENG technology [J]. | Nano Energy , 2024 , 129 . |
| MLA | Li, W. et al. "Positive impact of surface defects on Maxwell's displacement current-driven nano-LEDs: The application of TENG technology" . | Nano Energy 129 (2024) . |
| APA | Li, W. , Zhang, S. , Wang, K. , Qiu, J. , Li, J. , Zhu, J. et al. Positive impact of surface defects on Maxwell's displacement current-driven nano-LEDs: The application of TENG technology . | Nano Energy , 2024 , 129 . |
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Non-destructive and accurate inspection of gallium nitride light-emitting diode (GaN-LED) epitaxial wafers is important to GaN-LED technology. However, the conventional electroluminescence inspection, the photoluminescence inspection, and the automated optical inspection cannot fulfill the complex technical requirements. In this work, an inspection method and an operation system based on soft single-contact operation, namely, single-contact electroluminescence (SC-EL) inspection, are proposed. The key component of the SC-EL inspection system is a soft conductive probe with an optical fiber inside, and an AC voltage (70V pp, 100 kHz) is applied between the probe and the ITO electrode under the LED epitaxial wafer. The proposed SC-EL inspection can measure both the electrical and optical parameters of the LED epitaxial wafer at the same time, while not causing mechanical damage to the LED epitaxial wafer. Moreover, it is demonstrated that the SC-EL inspection has a higher electroluminescence wavelength accuracy than photoluminescence inspection. The results show that the non-uniformity of SC-EL inspection is 444.64%, which is much lower than that of photoluminescence inspection. In addition, the obtained electrical parameters from SC-EL can reflect the reverse leakage current (I s) level of the LED epitaxial wafer. The proposed SC-EL inspection can ensure high inspection accuracy without causing damage to the LED epitaxial wafer, which holds promising application in LED technology. © 2024 Chinese Laser Press.
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| GB/T 7714 | Su, H. , Qiu, J. , Li, J. et al. Non-destructive electroluminescence inspection for LED epitaxial wafers based on soft single-contact operation [J]. | Photonics Research , 2024 , 12 (8) : 1776-1784 . |
| MLA | Su, H. et al. "Non-destructive electroluminescence inspection for LED epitaxial wafers based on soft single-contact operation" . | Photonics Research 12 . 8 (2024) : 1776-1784 . |
| APA | Su, H. , Qiu, J. , Li, J. , Chen, R. , Le, J. , Lei, X. et al. Non-destructive electroluminescence inspection for LED epitaxial wafers based on soft single-contact operation . | Photonics Research , 2024 , 12 (8) , 1776-1784 . |
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Handwritten signatures are widely used in our daily lives, which focuses on how to obtain handwritten information comprehensively and effectively. Triboelectric nanogenerators can sensitively sense externally applied trigger signals and can be used to collect user handwriting signals and related features for handwriting input character detection and user identification. In this paper, an intelligent handwriting input panel based on triboelectric nanogenerator is proposed, which, combined with deep learning algorithms, achieves an accuracy of 99.32%, 98.96%, 99.14%, and 99.53% for recognizing handwritten signals in Arabic numerals, English words, Chinese characters, and different users, respectively. It is also possible to use different encoding methods for encrypted communication to transmit signals on the proposed handwriting input panel, demonstrating its potential applications. The results show that the smart handwritten input panel has great potential for personal handwritten signature recognition, privacy information, and human–computer interaction. © 2024 Elsevier B.V.
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| GB/T 7714 | Peng, Zhigang , Chen, Wandi , Lin, Jianpu et al. Input panel for handwriting detection based on triboelectric nanogenerator [J]. | Chemical Engineering Journal , 2024 , 500 . |
| MLA | Peng, Zhigang et al. "Input panel for handwriting detection based on triboelectric nanogenerator" . | Chemical Engineering Journal 500 (2024) . |
| APA | Peng, Zhigang , Chen, Wandi , Lin, Jianpu , Wang, Haonan , Tang, Heng , Zhang, Yu et al. Input panel for handwriting detection based on triboelectric nanogenerator . | Chemical Engineering Journal , 2024 , 500 . |
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高效、准确、全面地衡量光电薄膜,可以深入了解其结构特性、电学与光学特性等方面的信息,在器件的设计和性能优化方面发挥着关键作用.同时,光电薄膜的检测与表征也为光电薄膜材料的研究和开发提供了重要的理论基础和指导,推动了光电器件领域的技术进步和应用拓展,具有重要的学术意义和应用价值.近些年,涌现出多种新型检测与表征技术,然而相关综述文献较少,难以直观地了解各种最新表征方法的原理及其在器件性能优化中的具体应用.文章围绕角度分辨、空间分辨、时间分辨三个表征维度,综述了目前光电薄膜检测与表征技术的基本原理和特点,并介绍了相关技术在光电薄膜的发光特性、可视化空间异质性、载流子动力学等方面的应用进展.最后,讨论并展望了光电薄膜检测与表征技术的未来发展趋势.
Keyword ：
光电特性 光电特性 光电薄膜 光电薄膜 空间异质性 空间异质性 载流子动力学 载流子动力学
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| GB/T 7714 | 龚正 , 张树钱 , 郭焱民 et al. 光电薄膜的检测与表征研究进展:角度、空间、时间分辨技术 [J]. | 真空科学与技术学报 , 2024 , 44 (10) : 825-840 . |
| MLA | 龚正 et al. "光电薄膜的检测与表征研究进展:角度、空间、时间分辨技术" . | 真空科学与技术学报 44 . 10 (2024) : 825-840 . |
| APA | 龚正 , 张树钱 , 郭焱民 , 苏昊 , 李俊龙 , 王堃 et al. 光电薄膜的检测与表征研究进展:角度、空间、时间分辨技术 . | 真空科学与技术学报 , 2024 , 44 (10) , 825-840 . |
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Objective Nano-light emitting diodes (nano-LEDs) offer significant potential for ultra-high-resolution display applications. A key challenge in enhancing these displays is minimizing the emission angle of nano-LEDs to reduce optical crosstalk between adjacent pixels. This study addresses this issue by investigating the influence of various parameters on the emission characteristics of GaN-based nano-LEDs. Specifically, it explores the influences of nano-LED shape, the thickness of the GaN layer in the quantum well, and the surrounding dielectric layer on far-field radiation intensity and light emission angle. The objective is to provide a comprehensive simulation-based analysis that can guide the design and optimization of nano-LEDs for improved performance in high-resolution displays. Methods The study employs the finite element method (FEM) to simulate the optical behavior of GaN-based nano-LEDs. Several parameters are adjusted to analyze their effects on emission characteristics. First, different nano-LEDs are tested to determine their influence on the emission angle. Next, the thickness of the GaN layer within the quantum well is varied. Finally, the influence of a dielectric layer encasing the nano-LED is studied. Simulations are performed to evaluate both far-field radiation intensity and the vertical emission angle under these different configurations. The parameters are systematically adjusted to identify the optimal configuration that minimizes the emission angle and enhances the far-field radiation intensity. Results and Discussions To analyze the influence of nano-LED shape on emission properties, we compare the emission effects of nano-LEDs with various top diameters (D). As shown in Figs. 1(d)‒1(f), an electric field distribution for D=0, 400, and 500 nm reveals that a top diameter of 500 nm results in a more focused electric field. The vertical emission angle of the cylindrical nano-LED, where the top and bottom diameters are equal, is smaller, indicating superior optical performance. Figures 1(g) ‒ 1(i) demonstrate that the far-field radiation intensity is maximized, and the vertical emission angle minimized when D=500 nm. This relationship is summarized in Figs. 1(j) ‒ 1(k). Thus, a diameter of 500 nm is chosen for further optimization. Next, the effect of GaN thickness in the quantum well on the electroluminescence of cylindrical nano-LEDs with a diameter of 500 nm is examined. As shown in Figs. 2(a)‒2(d), increasing GaN thickness (T) enhances electron-hole recombination efficiency, leading to an expanded emission range, The electric field distribution for T=3, 5, and 7 nm suggests that a thinner GaN layer (T=3 nm) maintains strong far-field intensity while minimizing the emission angle, as shown in Fig. 2(e), which is ideal for achieving a smaller vertical emission angle. The addition of a dielectric layer around the nano-LED controls the effective emission area, focusing the light and improving its directionality. Figures 3(a) ‒ 3(d) show the electric field distribution for different dielectric layer widths (W=50, 100, and 200 nm). A dielectric layer width of 200 ‒ 300 nm is found to effectively absorb side-emitted light, reducing the emission angle and increasing far-field intensity by approximately 30% [Figs. 3(e)‒3(g)]. The optimal width for minimizing the emission angle and maximizing intensity is found to be 70 nm. Further simulations investigate the effect of the dielectric layer’s refractive index on emission properties. Figures 4(a) ‒ 4(d) illustrate the electric field distribution and far-field intensity for refractive indices ranging from n=1.3 to n=1.8, with W=200 nm. The optimal refractive index of n=1.5 provides the most focused far-field distribution and the smallest emission angle. A similar trend is observed for W=300 nm [Figs. 4(e)‒4(h)], where n=1.5 provides the best performance. Ultimately, cylindrical nano-LEDs with a dielectric layer of n=1.5 and W=300 nm demonstrate a significantly narrower emission angle and a 40% increase in far-field radiation intensity [Figs. 5(a) and 5(b)]. This configuration effectively absorbs side-emitted light and concentrates the emission, highlighting its potential for high-resolution display applications. Conclusions We analyze the factors influencing the emission characteristics of GaN-based nano-LEDs. Through FEM simulation, it is found that the top diameter, GaN layer thickness, and dielectric layer properties significantly affect farfield radiation intensity and emission angle. The optimal configuration, which includes a top diameter of 500 nm, a GaN layer thickness of 3 nm, a dielectric layer refractive index of 1.5, and a dielectric layer width of 300 nm, results in a 40% increase in far-field radiation intensity and a significantly reduced emission angle. These findings offer valuable insights for the design of high-performance nano-LEDs in ultra-high-resolution display applications. © 2024 Chinese Optical Society. All rights reserved.
Keyword ：
Field emission displays Field emission displays Gallium nitride Gallium nitride Laser beams Laser beams Light emitting diodes Light emitting diodes Magnetic levitation Magnetic levitation Phosphorescence Phosphorescence Surface discharges Surface discharges
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| GB/T 7714 | Zhang, Zhipeng , Su, Hao , Li, Wenhao et al. Optimized Simulation of Nano-LED Far-Field Radiation Intensity and Emission Angle [J]. | Acta Optica Sinica , 2024 , 44 (22) . |
| MLA | Zhang, Zhipeng et al. "Optimized Simulation of Nano-LED Far-Field Radiation Intensity and Emission Angle" . | Acta Optica Sinica 44 . 22 (2024) . |
| APA | Zhang, Zhipeng , Su, Hao , Li, Wenhao , Zhang, Shuqian , Guo, Yanmin , Gong, Zheng et al. Optimized Simulation of Nano-LED Far-Field Radiation Intensity and Emission Angle . | Acta Optica Sinica , 2024 , 44 (22) . |
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Neuromorphic computing, inspired by the highly interconnected and energy-efficient way the human brain processes information, has emerged as a promising technology for post-Moore's law era. This emerging technology can emulate the structures and the functions of the human brain and is expected to overcome the fundamental limitation of the current von Neumann computing architecture. Neuromorphic devices stand out as the key components of future electronic systems, exhibiting potential in shaping the landscape of neuromorphic computing. Especially, nanowire (NW)-based neuromorphic devices, with their advantages of high integration, high-speed computing, and low power consumption, have recently emerged as candidates for neuromorphic computing technology. Here, a critical overview of the current development and relevant research in the field of NW-based neuromorphic devices are provided. Neuromorphic devices based on different NW materials are comprehensively discussed, including Ag NW-based, organic NW-based, metal oxide NW-based, and semiconductor NW-based devices. Finally, as a foresight perspective, the potentials and the challenges of these NW-based neuromorphic devices for use as future brain-like electronics are discussed.
Keyword ：
artificialneuron artificialneuron artificial synapse artificial synapse brain-like electronics brain-like electronics nanowire nanowire nanowire network nanowire network neuromorphic computing neuromorphic computing neuromorphic device neuromorphic device synaptic plasticity synaptic plasticity
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| GB/T 7714 | Qiu, Jiawen , Li, Junlong , Li, Wenhao et al. Advancements in Nanowire-Based Devices for Neuromorphic Computing: A Review [J]. | ACS NANO , 2024 , 18 (46) : 31632-31659 . |
| MLA | Qiu, Jiawen et al. "Advancements in Nanowire-Based Devices for Neuromorphic Computing: A Review" . | ACS NANO 18 . 46 (2024) : 31632-31659 . |
| APA | Qiu, Jiawen , Li, Junlong , Li, Wenhao , Wang, Kun , Zhang, Shuqian , Suk, Chan Hee et al. Advancements in Nanowire-Based Devices for Neuromorphic Computing: A Review . | ACS NANO , 2024 , 18 (46) , 31632-31659 . |
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