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author:

Chen, Peiqi (Chen, Peiqi.) [1] | Wang, Kun (Wang, Kun.) [2] | Chen, Jingjing (Chen, Jingjing.) [3] | Xu, Hailong (Xu, Hailong.) [4] | Zhang, Yongai (Zhang, Yongai.) [5] | Wu, Chaoxing (Wu, Chaoxing.) [6] | Zhou, Xiongtu (Zhou, Xiongtu.) [7] | Liu, Zhiqiang (Liu, Zhiqiang.) [8] | Guo, Tailiang (Guo, Tailiang.) [9]

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EI

Abstract:

Since the luminance of Micro-LEDs is highly dependent on the injected current density, inevitable voltage fluctuations will lead to luminance fluctuations and weak luminance robustness. In this work, Micro-LED chips working in non-electrical contact and non-carrier injection (NEC and NCI) mode is proposed, which is totally different from the current-injected mode. The luminance of NEC and NCI Micro-LEDs first increases with the increase of the voltage, and the saturation luminance can be obtained during a relatively large voltage range, which is defined as an operating voltage window. Then the luminance decreases when the voltage is further increased. It is demonstrated that the operating voltage windows can enhance luminance robustness. Finally, the insulating layer that is crucial for the operating voltage windows is optimized. And the working mechanisms related to the existence of operating voltage windows are discussed. © 1963-2012 IEEE.

Keyword:

Light emitting diodes Luminance Semiconductor quantum wells

Community:

  • [ 1 ] [Chen, Peiqi]College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
  • [ 2 ] [Wang, Kun]College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
  • [ 3 ] [Chen, Jingjing]College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
  • [ 4 ] [Xu, Hailong]College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
  • [ 5 ] [Zhang, Yongai]College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
  • [ 6 ] [Zhang, Yongai]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 7 ] [Wu, Chaoxing]College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
  • [ 8 ] [Wu, Chaoxing]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 9 ] [Zhou, Xiongtu]College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
  • [ 10 ] [Zhou, Xiongtu]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 11 ] [Liu, Zhiqiang]Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
  • [ 12 ] [Guo, Tailiang]College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
  • [ 13 ] [Guo, Tailiang]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China

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Source :

IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year: 2022

Issue: 1

Volume: 69

Page: 212-215

3 . 1

JCR@2022

2 . 9 0 0

JCR@2023

ESI HC Threshold:66

JCR Journal Grade:2

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 17

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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