The　luminescent　properties　and　mechanisms　of　non-carrier　injection　(NCI)　mode　quantum　dot　light-emitting　diodes　(QLEDs)　are　explored　in　this　work.　The　intermediate　insulator　electric　layer,　Poly(vinylidene　fluoride-trifluoroethylene-chlorofluoroethylene)　(P(VDF-TrFE-CFE)),　effectively　blocks　carrier　injection　from　the　electrodes.　Carriers　for　radiative　recombination　in　the　quantum　dot　(QD)　layer　are　generated　by　the　corresponding　carrier　generation　complex　layer　under　an　AC　electric　field.　In　this　investigation,　the　emission　layer　(EML),　comprising　distinct　layers　of　Cd-based　quantum　dots,　is　precisely　regulated　using　the　spontaneous　spreading　(SS)　method.　The　work　reveals　that　the　thickness　of　the　QDs　in　NCI-QLEDs　significantly　influences　the　device＇s　luminescent　performance.　In　NCI-QLEDs　with　a　double　QD　layer　as　the　EML,　the　device　exhibits　a　maximum　brightness　of　1003.6　cd　m　⁻2　and　a　start-up　voltage　of　7　root　mean　square　voltage　(VRMS).　This　brightness　level　represents　the　highest　reported　for　vertical　emission　NCI-QLEDs.　All　devices　exhibit　a　broad　range　of　driven　voltages.　Interestingly,　luminescence　is　detected　only　during　a　half-cycle　of　the　driven　signal,　as　indicated　by　transient　time-resolved　spectrum　test　results.　A　system　is　established　to　analyze　the　luminescence　mechanism　comprehensively.　Finally,　a　proposed　carrier　compounding　mechanism　sheds　light　on　the　behavior　of　NCI-QLED　devices.　This　work　investigates　the　luminescent　properties　and　mechanisms　of　quantum　dot　light-emitting　diodes　(QLEDs)　in　non-carrier　injection　mode.　The　emission　layer　is　precisely　regulated　using　the　spontaneous　spreading　method.　In　NCI-QLEDs,　employing　a　double　QD　layer　as　the　EML,　the　device　achieves　a　groundbreaking　maximum　brightness　of　1003.6　cd　m　⁻2,　marking　a　record　for　vertical　emission　NCI-QLEDs.image