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author:

Wang, Kun (Wang, Kun.) [1] | Liu, Ye (Liu, Ye.) [2] | Chen, Rong (Chen, Rong.) [3] | Wu, Chaoxing (Wu, Chaoxing.) [4] | Zhou, Xiongtu (Zhou, Xiongtu.) [5] (Scholars:周雄图) | Zhang, Yongai (Zhang, Yongai.) [6] (Scholars:张永爱) | Liu, Zhiqiang (Liu, Zhiqiang.) [7] | Guo, Tailiang (Guo, Tailiang.) [8] (Scholars:郭太良)

Indexed by:

EI SCIE

Abstract:

Noncarrier injection (NCI) mode is an emerging driving mode for nanoscale light-emitting diodes (LEDs). Here, we demonstrate that a single light pulse from NCI-LEDs can be split into multiple pulses with small pulse widths that cannot be obtained by using traditional driving technology. Light-pulse splitting is achieved by using a combined signal that is a superposition of a basic signal and a signal with small amplitude and high frequency. Theoretical equations regarding the conduction current and current-pulse splitting are provided to explain light-pulse splitting theoretically. Then, light-pulse splitting is experimentally proven with a capacitor-LED-capacitor construction that is used to simulate the luminescence in NCI mode physically. Finally, we demonstrate light-pulse splitting from nanorod GaN-LEDs and discuss the working mechanisms related to electron multiple-frequency oscillation. This work can deepen the understanding of the NCI mode and provides a potential approach for advanced light-pulse-based technology.

Keyword:

alternating current Current density Electric potential Electrodes Light emitting diodes light-pulse splitting Nano-light-emitting diodes noncarrier injection (NCI) mode Semiconductor diodes Threshold voltage Voltage measurement

Community:

  • [ 1 ] [Wang, Kun]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 2 ] [Liu, Ye]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 3 ] [Wu, Chaoxing]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 4 ] [Zhou, Xiongtu]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 5 ] [Zhang, Yongai]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 6 ] [Guo, Tailiang]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 7 ] [Chen, Rong]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Peoples R China
  • [ 8 ] [Wu, Chaoxing]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Peoples R China
  • [ 9 ] [Zhou, Xiongtu]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Peoples R China
  • [ 10 ] [Zhang, Yongai]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Peoples R China
  • [ 11 ] [Guo, Tailiang]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Peoples R China
  • [ 12 ] [Liu, Zhiqiang]Chinese Acad Sci, Res & Dev Ctr Semicond Lighting Technol, Inst Semicond, Beijing 100083, Peoples R China

Reprint 's Address:

  • [Wu, Chaoxing]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China

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Source :

IEEE ELECTRON DEVICE LETTERS

ISSN: 0741-3106

Year: 2021

Issue: 7

Volume: 42

Page: 1033-1036

4 . 8 1 6

JCR@2021

4 . 1 0 0

JCR@2023

ESI Discipline: ENGINEERING;

ESI HC Threshold:105

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 18

SCOPUS Cited Count: 21

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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