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学者姓名：郭太良
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Abstract ：
The light source of traditional edge-lit backlight modules typically consists of LED bars which composed of multiple LED chips. However, the spacing between the chips can create distinct bright and dark spots (Hot Spot) on the input surface of the light guide plate (LGP), thereby affecting the optical performance of the backlight module. In this paper, we proposed an edge-lit backlight module with staggered light bars, incorporating a light propagation cavity design to enhance light receiving efficiency and eliminate Hot Spot. Firstly, we designed the structure of the staggered light bars and the light propagation cavity. Secondly, the advantages of the new backlight module design in eliminating Hot Spot were verified through TracePro simulations. The simulation results showed that the maximum irradiance of the backlight module reached 81,010 W/m(2), and the luminance uniformity peaked at 75.142 %. Compared to the traditional backlight modules, the light receiving efficiency was increased by 6.62 %, and the luminance uniformity was improved by 1.34 times, which effectively mitigated the Hot Spot. Finally, we discussed the impact of the improved backlight module in reducing the thickness of the LGP and decreasing the number of LED chips, achieved superior optical performance. This study demonstrates the significant advantages of the light propagation cavity in eliminating Hot Spot within backlight modules.
Keyword ：
Edge-lit backlight module Edge-lit backlight module Hot spot Hot spot LED light propagation cavity LED light propagation cavity Optical design Optical design Staggered dual light bars Staggered dual light bars
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| GB/T 7714 | Qiu, Yingyi , Ye, Yun , Xie, Hongxing et al. An LED light propagation cavity with staggered light bars for eliminating the Hot Spot [J]. | OPTICS COMMUNICATIONS , 2025 , 574 . |
| MLA | Qiu, Yingyi et al. "An LED light propagation cavity with staggered light bars for eliminating the Hot Spot" . | OPTICS COMMUNICATIONS 574 (2025) . |
| APA | Qiu, Yingyi , Ye, Yun , Xie, Hongxing , Chen, Peihui , Liu, Kuanhuang , Chen, Enguo et al. An LED light propagation cavity with staggered light bars for eliminating the Hot Spot . | OPTICS COMMUNICATIONS , 2025 , 574 . |
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针对野生动物数据集样本量小、目标尺度多变所导致的野生动物检测困难以及检测精度低等问题,提出一种基于多尺度上下文提取的小样本野生动物检测(MS-FSWD)算法.首先,通过多尺度上下文提取模块增强模型对不同尺度的野生动物的感知能力,提高检测性能;其次,引入Res2Net作为原型校准模块的强分类网络对分类器输出的分类分数进行校正;然后,在RPN中加入置换注意力机制,增强目标区域的特征图,弱化背景信息;最后,将平衡L1损失作为定位损失函数,提升目标定位性能.实验结果表明,相比DeFRCN算法,MS-FSWD在小样本野生动物数据集FSWA上,1-shot和3-shot检测任务中新类AP50分别提升了9.9%和6.6%;在公共数据集PASCAL VOC上,MS-FSWD最高提升了12.6%.与VFA算法相比,在PASCAL VOC数据集Novel Set 3的10-shot任务中,新类AP50提升了3.3%.
Keyword ：
多尺度上下文提取 多尺度上下文提取 小样本目标检测 小样本目标检测 注意力机制 注意力机制 迁移学习 迁移学习 野生动物检测 野生动物检测
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| GB/T 7714 | 刘珂 , 林珊玲 , 师欣雨 et al. 基于多尺度上下文提取的小样本野生动物检测 [J]. | 液晶与显示 , 2025 , 40 (3) : 516-526 . |
| MLA | 刘珂 et al. "基于多尺度上下文提取的小样本野生动物检测" . | 液晶与显示 40 . 3 (2025) : 516-526 . |
| APA | 刘珂 , 林珊玲 , 师欣雨 , 林坚普 , 吕珊红 , 林志贤 et al. 基于多尺度上下文提取的小样本野生动物检测 . | 液晶与显示 , 2025 , 40 (3) , 516-526 . |
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Quantum dots(QDs)exhibit excellent optical properties with their size tunability,excellent photoluminescence quantum yield(PLQY),and broad spectral absorption,making them an ideal material choice for full-col- or,wide-gamut LED color conversion layers. In particular,MAPbBr3 quantum dots(PQDs)are not only easy to prepare,but also possess excellent photovoltaic properties,and thus are considered to be a material with great potential for commercialization. However,the ligands on the surface of MAPbBr3 PQDs are highly susceptible to detachment after their synthesis,leading to an increase in the density of surface defect states,which makes them less stable under environmental factors such as water-oxygen and temperature,thus further degrading the PLQY. In this study,we propose an efficient one-step strategy for the synthesis of MAPbBr3 PQDs∶MAPbBr3 PQDs with excellent stability and high PLQY,which were successfully synthesized by ligand-assisted redeposition and the innovative use of 2-hex-yldecanoic acid(DA)ligand to replace the conventional oleic acid(OA)ligand at room temperature,and the double-short-chain DA ligand was able to establish a stronger coordination bond with the MAPbBr3 PQDs compared with that of the single-length carbon chain OA ligand. The strong interactions between the ligands and the PQDs contribute to the overall passivation of the lattice defects,thus mitigating the non-radiative recombination process and enhancing the environmental stability. As a result,the modified MAPbBr3 PQDs not only exhibited up to 87. 8% PLQY,but also showed higher stability in both water and oxygen environments. The PL peak of MAPbBr3 PQDs modified with DA ligands remained at 68. 3% of its original value after being left for half a month in a room temperature environment, whereas OA ligand-modified PQDs exhibited almost complete fluorescence burst. Subsequently,the DA ligand-modified green MAPbBr3 PQDs,red CsPbBrI2 PQDs,and blue CsPbCl1. 5Br1. 5 PQDs were coated and cured in a polystyrene(PS)environment to form a film,which can be used as a color conversion material instead of the traditional phosphors for the backlight of light-emitting diode(LED)displays. The color gamut is 137. 09% under NTSC standard. © 2025 Editorial Office of Chinese Optics. All rights reserved.
Keyword ：
Aspect ratio Aspect ratio Atomic emission spectroscopy Atomic emission spectroscopy Carbon Quantum Dots Carbon Quantum Dots Color Color Defect density Defect density Density (optical) Density (optical) Energy efficiency Energy efficiency Grain boundaries Grain boundaries Laser beams Laser beams Layered semiconductors Layered semiconductors Ligands Ligands Light sensitive materials Light sensitive materials Liquid crystals Liquid crystals Metamorphic rocks Metamorphic rocks Nanocrystallization Nanocrystallization Photoluminescence Photoluminescence Quantum yield Quantum yield
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| GB/T 7714 | Li, Gongming , Cai, Junhu , Lai, Wenzong et al. Performance Enhancement of MAPbBr3 Perovskite Quantum Dot for Wide Color Gamut LED via Double Short-chain Ligand Modification [J]. | Chinese Journal of Luminescence , 2025 , 46 (1) : 1-11 . |
| MLA | Li, Gongming et al. "Performance Enhancement of MAPbBr3 Perovskite Quantum Dot for Wide Color Gamut LED via Double Short-chain Ligand Modification" . | Chinese Journal of Luminescence 46 . 1 (2025) : 1-11 . |
| APA | Li, Gongming , Cai, Junhu , Lai, Wenzong , Chen, Xiaogang , Zha, Nan , Ye, Yun et al. Performance Enhancement of MAPbBr3 Perovskite Quantum Dot for Wide Color Gamut LED via Double Short-chain Ligand Modification . | Chinese Journal of Luminescence , 2025 , 46 (1) , 1-11 . |
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针对当前三维目标检测由于数据增强导致点云和图像无法有效对齐,点与点对齐方法会丢失图像特征以及定位和分类置信度不一致的问题,提出一种多模态融合的三维目标检测方法.首先,采用PointNet++提取点云的特征;采用卷积神经网络提取图像特征;其次,在点云与图像融合阶段,采用语义对齐方法以及图像球特征,实现点云与图像更好的跨模态对齐.同时采用基于注意力的方法来指导点云与图像特征的融合,以获取更可靠的图像特征;最后引入DIoU损失来平衡置信度不一致的问题.实验结果表明:所采用的方法明显优于baseline,在简单、中等和困难任务下,Car类别的mAP达85.6%.
Keyword ：
多模态融合 多模态融合 彩色图像 彩色图像 激光雷达 激光雷达 自动驾驶 自动驾驶
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| GB/T 7714 | 韩路宇 , 林珊玲 , 赵民 et al. 基于球语义多模态融合的三维目标检测 [J]. | 光电子技术 , 2025 , 45 (1) : 75-81 . |
| MLA | 韩路宇 et al. "基于球语义多模态融合的三维目标检测" . | 光电子技术 45 . 1 (2025) : 75-81 . |
| APA | 韩路宇 , 林珊玲 , 赵民 , 林志贤 , 郭太良 . 基于球语义多模态融合的三维目标检测 . | 光电子技术 , 2025 , 45 (1) , 75-81 . |
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以超高密度Cu/Sn微凸点和Cu/SnAg微凸点为研究对象,采用COMSOL软件建立仿真模型,研究了不同焊料凸点高度对键合可靠性的影响;采用电镀法制备Cu/Sn凸点阵列和Cu/SnAg凸点阵列,重点对界面处金属间化合物(Intermetallic compounds,IMC)进行研究.结果表明,Cu/SnAg凸点高度的增加有利于降低凸点键合界面应力,从而提高芯片键合可靠性.金属凸点尺寸越小,界面处金属间化合物生长越快,空洞数量越多.雾锡凸点的晶粒尺寸大于亮锡凸点,而且晶界数量较少,使得凸点界面上IMC的生长速度较慢.因此,雾锡凸点能够有效减少凸点界面空洞的形成,SnAg合金替代纯锡材料可以进一步减少凸点界面空洞的形成.通过优化工艺条件,成功制备出点间距为8 μm,像素阵列为1 920×1 080的超高密度Cu/SnAg金属凸点.
Keyword ：
Cu/SnAg凸点 Cu/SnAg凸点 Cu/Sn凸点 Cu/Sn凸点 电镀 电镀 金属间化合物 金属间化合物
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| GB/T 7714 | 罗灿琳 , 林畅 , 曾煌杰 et al. 电镀法制备超高密度Cu/Sn凸点和Cu/SnAg凸点及其微观形貌研究 [J]. | 光电子技术 , 2025 , 45 (1) : 10-17 . |
| MLA | 罗灿琳 et al. "电镀法制备超高密度Cu/Sn凸点和Cu/SnAg凸点及其微观形貌研究" . | 光电子技术 45 . 1 (2025) : 10-17 . |
| APA | 罗灿琳 , 林畅 , 曾煌杰 , 张永爱 , 孙捷 , 严群 et al. 电镀法制备超高密度Cu/Sn凸点和Cu/SnAg凸点及其微观形貌研究 . | 光电子技术 , 2025 , 45 (1) , 10-17 . |
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针对目前驾驶员疲劳检测算法存在检测过程复杂、参数多、精度低、运行速度慢等问题,提出了一种基于改进YOLOv8n-Pose的轻量级模型.该模型优化了YOLOv8n-Pose的结构.首先,在模型主干网络中,引入Ghost卷积减少模型参数量和不必要的卷积计算.其次,引入Slim-neck融合主干网络提取的不同尺寸特征,加速网络预测计算.同时在颈部网络添加遮挡感知注意力模块(SEAM),强调图像中的人脸区域并弱化背景,改善关键点定位效果.最后,在检测头部分提出一种GNSC-Head结构,引入共享卷积,并将传统卷积的BN层优化成更稳定的GN层,有效节省模型的参数空间和计算资源.实验结果显示,改进后的YOLOv8n-Pose相较于原始算法,mAP@0.5提高了0.9%,参数量和计算量各减少了50%,同时FPS提高了8%,最终的疲劳驾驶识别率达到93.5%.经验证,本文算法在轻量化的同时能够保持较高的检测精度,并且能够有效识别驾驶员状态,为车辆边缘设备的部署提供有力支撑.
Keyword ：
YOLOv8n-Pose YOLOv8n-Pose 注意力机制 注意力机制 深度学习 深度学习 疲劳驾驶检测 疲劳驾驶检测 轻量化 轻量化
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| GB/T 7714 | 蔡忠祺 , 林珊玲 , 林坚普 et al. 基于改进YOLOv8n-Pose的疲劳驾驶检测 [J]. | 液晶与显示 , 2025 , 40 (4) : 617-629 . |
| MLA | 蔡忠祺 et al. "基于改进YOLOv8n-Pose的疲劳驾驶检测" . | 液晶与显示 40 . 4 (2025) : 617-629 . |
| APA | 蔡忠祺 , 林珊玲 , 林坚普 , 吕珊红 , 林志贤 , 郭太良 . 基于改进YOLOv8n-Pose的疲劳驾驶检测 . | 液晶与显示 , 2025 , 40 (4) , 617-629 . |
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光场显示具有数据量小、结构简单、易于集成化等优点,使其在军事、医学、教育、娱乐等领域具有巨大的应用潜力.然而,全彩色、大视角、高分辨率、大景深的光场显示受限于高分辨率显示器、光调制器、智能算法、超高速计算机等技术的发展.近年来,人们致力于探索新的设计策略、新的器件结构和潜在的应用.综述了三维(3D)显示技术的发展与分类以凸显出光场显示的优势;阐述了光场显示的概念与意义;介绍了光场显示中的集成成像光场显示、投影光场显示和层光场显示的发展及主要技术挑战.强调了在新形势下对光场显示的新要求,并提出对中国发展光场显示的建议,即加强技术创新平台建设,推动光场显示与其他前沿技术的融合,重点攻克关键技术和产业链瓶颈,促进产学研合作,以确保在全球高科技领域的竞争力.
Keyword ：
3D显示 3D显示 光场显示 光场显示 层光场显示 层光场显示 投影光场显示 投影光场显示 集成成像光场显示 集成成像光场显示
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| GB/T 7714 | 彭玉颜 , 康家欣 , 周雄图 et al. 光场显示研发进展 [J]. | 科技导报 , 2025 , 43 (2) : 34-41 . |
| MLA | 彭玉颜 et al. "光场显示研发进展" . | 科技导报 43 . 2 (2025) : 34-41 . |
| APA | 彭玉颜 , 康家欣 , 周雄图 , 张永爱 , 郭太良 , 吴朝兴 . 光场显示研发进展 . | 科技导报 , 2025 , 43 (2) , 34-41 . |
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GaN and related III-nitrides have attracted significant attention due to their excellent performance and extensive applications. However, the substrates for epitaxial growth of III-nitride films are limited to a few options, such as SiC, Si, and sapphire, which suffer from significant shortcomings including high cost, lattice mismatch, and thermal expansion coefficient mismatch. In this study, AlN film with c-axis orientation was deposited on a 2-inch polycrystalline Mo substrate using reactive magnetron sputtering, leveraging the advantages of Mo. Additionally, the influence of a two-dimensional graphene (Gr) insertion layer on the epitaxy of III-nitrides on Mo was investigated. The introduction of Gr slightly reduced the grain size of the AlN by about 10 nm. However, the Gr induced some in-plane tensile strain in the AlN film, which compensated the compressive strain in the subsequently grown GaN, resulting in a more undistorted GaN lattice with a c-axis strain of only 0.01 %. Continuous GaN films were successfully epitaxially grown on the sputtered AlN buffer layers, which are with c-axis preferred orientation and ultraviolet emission at similar to 3.36 eV. The grain size of GaN increased by about 5 nm and the full width at half maximum of the photoluminescence spectra also decreased by about 2.5 nm after the insertion of Gr. Our investigation indicates that Mo or Gr/Mo substrates are promising candidates for the heteroepitaxial growth of GaN films using sputtered AlN buffer layers. This work also provides a valuable strategy for low-cost and high-quality heteroepitaxy of other III-nitrides.
Keyword ：
AlN AlN GaN GaN Graphene Graphene Heteroepitaxy Heteroepitaxy Mo substrate Mo substrate
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| GB/T 7714 | Li, Yang , Chen, Jia , Pan, Kui et al. Polycrystalline Mo as the substrate for heteroepitaxy of GaN using sputtered AlN buffer layer [J]. | JOURNAL OF CRYSTAL GROWTH , 2025 , 660 . |
| MLA | Li, Yang et al. "Polycrystalline Mo as the substrate for heteroepitaxy of GaN using sputtered AlN buffer layer" . | JOURNAL OF CRYSTAL GROWTH 660 (2025) . |
| APA | Li, Yang , Chen, Jia , Pan, Kui , Chen, Qinzhong , Zhang, Ke , Lin, Zhihe et al. Polycrystalline Mo as the substrate for heteroepitaxy of GaN using sputtered AlN buffer layer . | JOURNAL OF CRYSTAL GROWTH , 2025 , 660 . |
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Optoelectronic memristors have garnered significant attention for their critical applications in neuromorphic computing. The incorporation of materials with excellent absorption efficiency in the fabrication of photoelectric memristors can significantly enhance the image recognition capabilities. CdS nanorods (NRs) are semiconductors with strong UV light absorption that can effectively improve charge transport characteristics, reduce the loss caused by recombination at the crystal surface, and enhance the light absorption characteristics. In this work, an efficient hot injection method for controlling the growth of CdS NRs or nanosquares (NSs) by optimizing the proportion of dodecanethiol (DDT) is reported. Meanwhile, two-terminal optoelectronic memristors based on CdS NSs and CdS NRs are fabricated in which the conductance of the devices can be continuously modulated under electrical and optical stimulations of different widths/spacings/amplitudes. These advantages impart the device with exceptional electrical and optical synaptic functions including excitability, inhibition, paired-pulse facilitation, short-term/long-term plasticity, and memory-forgetting behavior. In addition, the enhancement of the image recognition efficiency of the device by CdS NRs is demonstrated in experiments with the recognition of the optical image "F". This work offers valuable insights for material selection in the development of future neuromorphic devices.
Keyword ：
artificial synapses artificial synapses Cadmium sulfide Cadmium sulfide dodecanethiol dodecanethiol nanorod nanorod optoelectronicmemristor optoelectronicmemristor
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| GB/T 7714 | Zhang, Liyan , Zhao, Wenxiao , Lin, Zexi et al. CdS Nanorods in Photoelectronic Memristors for Improved Target Recognition Efficiency [J]. | ACS APPLIED NANO MATERIALS , 2025 , 8 (6) : 2940-2951 . |
| MLA | Zhang, Liyan et al. "CdS Nanorods in Photoelectronic Memristors for Improved Target Recognition Efficiency" . | ACS APPLIED NANO MATERIALS 8 . 6 (2025) : 2940-2951 . |
| APA | Zhang, Liyan , Zhao, Wenxiao , Lin, Zexi , Wang, Ziyi , Zheng, Xingke , Chen, Enguo et al. CdS Nanorods in Photoelectronic Memristors for Improved Target Recognition Efficiency . | ACS APPLIED NANO MATERIALS , 2025 , 8 (6) , 2940-2951 . |
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Electrohydrodynamic (EHD) printing is a promising method for manufacturing high-resolution quantum dot light-emitting diodes (QLEDs). The stability of the EHD printing process and the morphology of final quantum dot (QD) film are highly dependent on the ink formulation. To solve this problem, we selected a ternary solvent (decahydronaphthalene, tetradecane and nonane) ink for cadmium-based QDs (CdSe/ZnS) to achieve excellent QD dispersion while eliminating the "coffee ring" effect, resulting in high quality QD films. We also fabricated a complete QLED device by printing a light-emitting layer formed by linearly aligned strips of QDs, achieving an external quantum efficiency (EQE) of 19.2 %, which is one of the highest levels of printing devices. On this basis, we introduced patterned PMMA structures prepared by nanoimprinting method to achieve ultrahigh resolu-tion devices. The pixel density achieved was 8,758 pixels per inch (PPI), with a maximum EQE of 10.5 %. The luminance is 9530.43 cd/m2 at a voltage of 4 volts. This work shows promising potential in realizing ultra-high resolution and high-performance QLEDs.
Keyword ：
Electrohydrodynamic printing Electrohydrodynamic printing light-emitting diodes light-emitting diodes quantum dot quantum dot ultra-high resolution ultra-high resolution
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| GB/T 7714 | Zeng, Qunying , Fan, Yijie , Zhu, Yangbin et al. Electrohydrodynamic Printing Enables Ultrahigh Resolution Quantum Dot Light-Emitting Diodes [J]. | IEEE ELECTRON DEVICE LETTERS , 2025 , 46 (1) : 64-67 . |
| MLA | Zeng, Qunying et al. "Electrohydrodynamic Printing Enables Ultrahigh Resolution Quantum Dot Light-Emitting Diodes" . | IEEE ELECTRON DEVICE LETTERS 46 . 1 (2025) : 64-67 . |
| APA | Zeng, Qunying , Fan, Yijie , Zhu, Yangbin , Guo, Tailiang , Hu, Hailong , Li, Fushan . Electrohydrodynamic Printing Enables Ultrahigh Resolution Quantum Dot Light-Emitting Diodes . | IEEE ELECTRON DEVICE LETTERS , 2025 , 46 (1) , 64-67 . |
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