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学者姓名：郭太良
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Abstract ：
Optoelectronic memristors have garnered significant attention for their critical applications in neuromorphic computing. The incorporation of materials with excellent absorption efficiency in the fabrication of photoelectric memristors can significantly enhance the image recognition capabilities. CdS nanorods (NRs) are semiconductors with strong UV light absorption that can effectively improve charge transport characteristics, reduce the loss caused by recombination at the crystal surface, and enhance the light absorption characteristics. In this work, an efficient hot injection method for controlling the growth of CdS NRs or nanosquares (NSs) by optimizing the proportion of dodecanethiol (DDT) is reported. Meanwhile, two-terminal optoelectronic memristors based on CdS NSs and CdS NRs are fabricated in which the conductance of the devices can be continuously modulated under electrical and optical stimulations of different widths/spacings/amplitudes. These advantages impart the device with exceptional electrical and optical synaptic functions including excitability, inhibition, paired-pulse facilitation, short-term/long-term plasticity, and memory-forgetting behavior. In addition, the enhancement of the image recognition efficiency of the device by CdS NRs is demonstrated in experiments with the recognition of the optical image "F". This work offers valuable insights for material selection in the development of future neuromorphic devices.
Keyword ：
artificial synapses artificial synapses Cadmium sulfide Cadmium sulfide dodecanethiol dodecanethiol nanorod nanorod optoelectronicmemristor optoelectronicmemristor
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| GB/T 7714 | Zhang, Liyan , Zhao, Wenxiao , Lin, Zexi et al. CdS Nanorods in Photoelectronic Memristors for Improved Target Recognition Efficiency [J]. | ACS APPLIED NANO MATERIALS , 2025 , 8 (6) : 2940-2951 . |
| MLA | Zhang, Liyan et al. "CdS Nanorods in Photoelectronic Memristors for Improved Target Recognition Efficiency" . | ACS APPLIED NANO MATERIALS 8 . 6 (2025) : 2940-2951 . |
| APA | Zhang, Liyan , Zhao, Wenxiao , Lin, Zexi , Wang, Ziyi , Zheng, Xingke , Chen, Enguo et al. CdS Nanorods in Photoelectronic Memristors for Improved Target Recognition Efficiency . | ACS APPLIED NANO MATERIALS , 2025 , 8 (6) , 2940-2951 . |
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全无机钙钛矿量子点因其高光致发光量子产率(Photoluminescence Quantum Yield,PLQY)、带隙可调、高色纯度等特性,在宽色域显示上的应用十分广泛,但其表面缺陷与晶格不稳定限制了其进一步应用.通过热注入法将ZnI2作为掺杂剂成功合成了 Zn2+掺杂的CsPbI3量子点(Zn:CsPbI3量子点).试验表明,Zn部分取代了 Pb,钙钛矿晶格逐渐收缩但晶型保持不变,提高了辐射衰减率,有效消除量子点缺陷态.Zn:CsPbI3量子点相较于原始CsPbI3量子点具有更好的相稳定性,PLQY也从56％提升至98％,同时PLQY在10天后仍可保持在80％以上.选用窄发射的Zn:CsPbI3,CsPbBr3与CsPbCl3量子点作为LED颜色转换材料,在国家电视标准委员会(National Television Standards Committee,NTSC)标准下,其色域达到了135.22％,证明了其在直视型LED显示屏或者液晶显示器(Liquid Crystal Display,LCD)背光领域具有潜在应用前景.
Keyword ：
Zn离子掺杂CsPbI3 Zn离子掺杂CsPbI3 材料科学 材料科学 热注入法 热注入法 离子掺杂 离子掺杂
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| GB/T 7714 | 查楠 , 蔡俊虎 , 叶芸 et al. Zn离子掺杂CsPbI3量子点及其色转换LED应用(封面文章·特邀) [J]. | 红外与激光工程 , 2025 , 54 (1) : 1-11 . |
| MLA | 查楠 et al. "Zn离子掺杂CsPbI3量子点及其色转换LED应用(封面文章·特邀)" . | 红外与激光工程 54 . 1 (2025) : 1-11 . |
| APA | 查楠 , 蔡俊虎 , 叶芸 , 徐胜 , 郭太良 , 陈恩果 . Zn离子掺杂CsPbI3量子点及其色转换LED应用(封面文章·特邀) . | 红外与激光工程 , 2025 , 54 (1) , 1-11 . |
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量子点(Quantum dots)凭借其尺寸可调控、卓越的光致发光量子产率(PLQY)以及宽光谱吸收等特性,展现出了卓越的光学性能,使其成为全彩广色域显示中LED色转换层的理想材料选择.特别是MAPbBr3钙钛矿量子点(PQDs),不仅制备工艺简单,并且还拥有优异的光电性能,因而被视为极具商业化潜力的材料.然而,MAPbBr3 PQDs在合成后其表面的配体极易脱落,导致表面缺陷态密度增加,这使得它们在水氧等环境因素下稳定性较差,最终导致其PLQY进一步降低.本研究提出了一种高效的一步合成MAPbBr3 PQDs策略:通过配体辅助再沉积技术(LARP),并创新性地使用2-己基癸酸(DA)配体替换传统的油酸(OA)配体,在室温条件下成功地合成了具有出色稳定性和高PLQY的MAPbBr3 PQDs.与单长碳链的OA配体相比,双短链的DA配体能与MAPbBr3 PQDs建立起更强的配位键.配体与PQDs之间的强相互作用有助于全面钝化晶格缺陷,从而减弱非辐射过程并提高材料的环境稳定性.因此,DA修饰后的MAPbBr3 PQDs不仅展现出高达 87.8%的PLQY,而且在水氧环境中也表现出更高的稳定性.室温环境下,使用DA配体修饰后的MAPbBr3 PQDs的PL峰值在放置半个月后仍保持在原来的68.3%,而OA配体修饰的PQDs表现出几乎完全的荧光猝灭.随后,将DA配体修饰后的绿色发射MAPbBr3 PQDs、红色发射CsPbBrI2 PQDs以及蓝色发射CsPbCl1.5Br1.5 PQDs置于聚苯乙烯(PS)环境中包覆固化成膜,替代传统荧光粉应用于显示器件发光二极管(LED)的色转换层,测试其色域范围达到了NTSC标准的137.09%.
Keyword ：
DA配体 DA配体 LED LED MAPbBr3 PQDs MAPbBr3 PQDs 广色域 广色域 稳定性 稳定性
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| GB/T 7714 | 李恭明 , 蔡俊虎 , 赖文宗 et al. 双短链配体调控提升MAPbBr3量子点性能及广色域LED显示应用 [J]. | 发光学报 , 2025 , 46 (1) : 1-11 . |
| MLA | 李恭明 et al. "双短链配体调控提升MAPbBr3量子点性能及广色域LED显示应用" . | 发光学报 46 . 1 (2025) : 1-11 . |
| APA | 李恭明 , 蔡俊虎 , 赖文宗 , 陈晓钢 , 查楠 , 叶芸 et al. 双短链配体调控提升MAPbBr3量子点性能及广色域LED显示应用 . | 发光学报 , 2025 , 46 (1) , 1-11 . |
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InP quantum dots have received intensive attention due to their tunable emission wavelengths, narrow bandwidths, and high color purity. Nevertheless, InP quantum dots exhibit notable instability in a complex environment due to their highly oxidizable properties. In this study, we present a strategy for synthesizing InP@Al2O3 nanocomposites that have InP quantum dots evenly embedded in a hybrid substrate containing Al2O3 and coupling-interconnection layers of Si and Al. In addition, we used high-power UV irradiation to repair the defects generated during the synthesis process, leading to photoluminescence (PL) intensity increase of more than 10 times. InP@Al2O3 nanocomposites have demonstrated up to 9 h of laser stability, 30 days of water stability and acid stability and 20 days of alkali stability. It has far exceeded that of InP quantum dots and commercially available phosphors. Distal-type light-emitting diodes (LEDs) with stable and standard white emission can be realized by combining red and green InP@Al2O3 nanocomposites with blue LED chips.
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| GB/T 7714 | Ding, Xiaobo , Hu, Hailong , Guo, Tailiang et al. Ultrastable InP@Al2O3 nanocomposites with UV curable function for application in white LEDs [J]. | JOURNAL OF MATERIALS CHEMISTRY C , 2024 , 13 (4) : 1883-1892 . |
| MLA | Ding, Xiaobo et al. "Ultrastable InP@Al2O3 nanocomposites with UV curable function for application in white LEDs" . | JOURNAL OF MATERIALS CHEMISTRY C 13 . 4 (2024) : 1883-1892 . |
| APA | Ding, Xiaobo , Hu, Hailong , Guo, Tailiang , Li, Fushan . Ultrastable InP@Al2O3 nanocomposites with UV curable function for application in white LEDs . | JOURNAL OF MATERIALS CHEMISTRY C , 2024 , 13 (4) , 1883-1892 . |
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针对多模态工业检测中高维特征之间存在干扰,导致检测率不理想的问题,提出了一种基于标准化流的多模态工业异常检测方法.首先提取图像的3D点云的深度信息将其作为第4个通道添加到RGB图像中,生成融合后的RGBD图像,然后使用预训练的特征提取网络提取融合后的图像特征,最后使用特征训练得到一个用于异常检测的标准化流模型.实验结果表明,异常检测模型在MVTec 3D-AD数据集的平均Pixel AUROC达到95.8％,平均AU-PRO达到86.2％.相较于其他模型分别提升了 2.6％和9.1％.
Keyword ：
多模态 多模态 工业异常检测 工业异常检测 标准化流 标准化流 点云 点云
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| GB/T 7714 | 谢宏兴 , 林珊玲 , 林志贤 et al. 点云与图像融合的无监督异常检测算法研究 [J]. | 激光与红外 , 2024 , 54 (10) : 1642-1648 . |
| MLA | 谢宏兴 et al. "点云与图像融合的无监督异常检测算法研究" . | 激光与红外 54 . 10 (2024) : 1642-1648 . |
| APA | 谢宏兴 , 林珊玲 , 林志贤 , 郭太良 , 林坚普 , 吕珊红 . 点云与图像融合的无监督异常检测算法研究 . | 激光与红外 , 2024 , 54 (10) , 1642-1648 . |
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With the development of near-eye displays, the demands for display resolution and performance are increasing. Quantum dot performance is virtually independent of pixel size, making it an efficient way to display ultrahigh resolution. However, the low efficiency of high-resolution quantum dot devices has been an urgent technical bottleneck to be solved. Here, we constructed a dense single-molecule modification layer and a leakage current blocking layer for high-resolution devices using self-assembly, thereby realizing ultrahigh-resolution, high-efficiency, and stable high-resolution quantum dot light-emitting diodes (QLEDs). The peak external quantum efficiencies of the red devices are 24.68% (8759 PPI) and 19.54% (26075 PPI), respectively, with an exceptional long lifetime (T 95@1000 nit) up to 4871 h. In addition, we explored the feasibility of this modification strategy on non-Cd-based quantum dots. In conclusion, our strategy effectively improves the performance of high-resolution devices and provides a superior approach for realizing near-eye display applications.
Keyword ：
Light-emittingdevice Light-emittingdevice Quantum dots Quantum dots Self-assembly Self-assembly Single-molecular modificationlayer Single-molecular modificationlayer Ultrahighresolution Ultrahighresolution
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| GB/T 7714 | Zhong, Chao , Alsharafi, Rashed , Hu, Hailong et al. High-Performance, High-Resolution Quantum Dot Light-Emitting Diodes with Self-Assembly Single-Molecular Interface Modification [J]. | NANO LETTERS , 2024 , 24 (44) : 14125-14132 . |
| MLA | Zhong, Chao et al. "High-Performance, High-Resolution Quantum Dot Light-Emitting Diodes with Self-Assembly Single-Molecular Interface Modification" . | NANO LETTERS 24 . 44 (2024) : 14125-14132 . |
| APA | Zhong, Chao , Alsharafi, Rashed , Hu, Hailong , Yu, Kuibao , Yang, Kaiyu , Guo, Tailiang et al. High-Performance, High-Resolution Quantum Dot Light-Emitting Diodes with Self-Assembly Single-Molecular Interface Modification . | NANO LETTERS , 2024 , 24 (44) , 14125-14132 . |
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Self‐luminous projection technologies, such as Micro‐LED chips, compared with traditional projection methods, does not require complex lighting path. So it can significantly improve light utilization rate and reduce costs. However, technical challenges in Micro‐LED chip production make it difficult to improve the chip's resolution further. Some studies have shown that compared with the original image resolution of the spatial light modulator (SLM), the projection images overlapped is an effective method to improve the resolution of the projector. In this paper, we study the working principle of the extended pixel resolution actuator and propose a self‐luminous projection resolution enhancement system based on Micro‐LED chip. It can improve the resolution of the projection images with the resolution of the Micro‐LED chip unchanged. The resolution enhancement system consists of a Micro‐LED chip, an extended pixel resolution actuator and a projection lens. According to the working principle of the extended pixel resolution actuator, the projection lens is an image‐space telecentric structure, in which modulation transfer function of projection imaging at Nyquist frequency 100 lp/mm is greater than 0.4. Finally, the tolerance analysis on the projection lens is completed. The results show that the projection lens has a high success rate in processing. This work is of great significance for improving the resolution of Micro‐LED self‐luminous projection images.
Keyword ：
extended pixel resolution actuator extended pixel resolution actuator Micro-LED Micro-LED optical design optical design
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| GB/T 7714 | Weijie Hao , Huajian Jin , Enguo Chen et al. P‐17.3: Micro‐LED Projection Display Resolution Enhancement System [J]. | SID Symposium Digest of Technical Papers , 2024 , 55 : 1550-1553 . |
| MLA | Weijie Hao et al. "P‐17.3: Micro‐LED Projection Display Resolution Enhancement System" . | SID Symposium Digest of Technical Papers 55 (2024) : 1550-1553 . |
| APA | Weijie Hao , Huajian Jin , Enguo Chen , Sheng Xu , Yun Ye , Tailiang Guo . P‐17.3: Micro‐LED Projection Display Resolution Enhancement System . | SID Symposium Digest of Technical Papers , 2024 , 55 , 1550-1553 . |
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| GB/T 7714 | Aochen Du , Xingke Zheng , Ye Yun et al. 8‐1: High power solid state lighting via transparent ceramics protecting quantum dots diffusion plates [J]. | SID Symposium Digest of Technical Papers , 2024 , 55 : 79-79 . |
| MLA | Aochen Du et al. "8‐1: High power solid state lighting via transparent ceramics protecting quantum dots diffusion plates" . | SID Symposium Digest of Technical Papers 55 (2024) : 79-79 . |
| APA | Aochen Du , Xingke Zheng , Ye Yun , Xu Sheng , Chen Enguo , Guo Tailiang . 8‐1: High power solid state lighting via transparent ceramics protecting quantum dots diffusion plates . | SID Symposium Digest of Technical Papers , 2024 , 55 , 79-79 . |
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In order to evaluate the influence of defects on the performance of Micro‐LED devices, this paper adopts a finite element simulation method based on semiconductor physics. Firstly, a simulation model of Micro‐LED devices is established, including key components such as electrodes, materials, and structures. Then, defect parameters are set to simulate the optical properties of Micro‐LED devices. Finally, by comparing the simulation results with or without introducing deep level defects, the influence law of these defects on the optical output and electrical characteristics of Micro‐LED devices was revealed.
Keyword ：
Defects Defects Finite element simulation Finite element simulation Gallium nitride Gallium nitride Micro-LED Micro-LED Photoelectric properties Photoelectric properties
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| GB/T 7714 | Jinyu Ye , Xiongtu Zhou , Yongai Zhang et al. P‐11.14: The Impact of Defects on the Performance of Micro‐LED Devices: A Simulation Study [J]. | SID Symposium Digest of Technical Papers , 2024 , 55 : 1332-1334 . |
| MLA | Jinyu Ye et al. "P‐11.14: The Impact of Defects on the Performance of Micro‐LED Devices: A Simulation Study" . | SID Symposium Digest of Technical Papers 55 (2024) : 1332-1334 . |
| APA | Jinyu Ye , Xiongtu Zhou , Yongai Zhang , Chaoxing Wu , Tailiang Guo , Qun Yan . P‐11.14: The Impact of Defects on the Performance of Micro‐LED Devices: A Simulation Study . | SID Symposium Digest of Technical Papers , 2024 , 55 , 1332-1334 . |
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| GB/T 7714 | Longwen Yang , Aochen Du , Xingke Zheng et al. P‐14.1: Rapid synthesis of manganese doped perovskite quantum dots for white light‐emitting diodes [J]. | SID Symposium Digest of Technical Papers , 2024 , 55 : 1415-1416 . |
| MLA | Longwen Yang et al. "P‐14.1: Rapid synthesis of manganese doped perovskite quantum dots for white light‐emitting diodes" . | SID Symposium Digest of Technical Papers 55 (2024) : 1415-1416 . |
| APA | Longwen Yang , Aochen Du , Xingke Zheng , Yun Ye , Enguo Chen , Sheng Xu et al. P‐14.1: Rapid synthesis of manganese doped perovskite quantum dots for white light‐emitting diodes . | SID Symposium Digest of Technical Papers , 2024 , 55 , 1415-1416 . |
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