The　wavelength　tunable　and　environmentally　friendly　InP　quantum　dots　are　considered　one　of　the　most　powerful　alternatives　to　cadmium-based　quantum　dots,　and　the　luminescent　devices　prepared　with　them　also　show　great　potential.　There　is　still　room　for　improvement　in　the　synthesis　methods　and　device　applications　of　InP　based　quantum　dots.　In　this　work,　we　report　one　pot　synthesis　route　for　InP/ZnSe/ZnSeS/ZnS　green　QDs　based　on　tris　(dimethylamino)phosphine　(DMP)　phosphorus　by　using　the　strategy　of　multi　shell　coating　and　gradient　heating　to　reduce　surface　defects　of　quantum　dots.　The　shell　structure,　dosage,　and　growth　temperature　have　all　been　taken　into　account　in　order　to　explore　better　performance　of　InP　QDs.　The　synthesized　green　quantum　dots　have　86　%　PLQY　and　a　full　width　at　half　maximum　of　36　nm.　In　addition,　the　synthesized　green　InP　quantum　dots　are　applied　in　AC　QLED　devices.　The　experimental　results　show　that　the　luminescence　intensity　is　affected　by　the　driving　voltage　and　frequency,　which　is　similar　to　the　working　mode　of　non-carrier-injected　emitting　devices.　And　there　is　a　matching　value　between　the　voltage　and　frequency.