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学者姓名：张永爱
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光场显示具有数据量小、结构简单、易于集成化等优点,使其在军事、医学、教育、娱乐等领域具有巨大的应用潜力.然而,全彩色、大视角、高分辨率、大景深的光场显示受限于高分辨率显示器、光调制器、智能算法、超高速计算机等技术的发展.近年来,人们致力于探索新的设计策略、新的器件结构和潜在的应用.综述了三维(3D)显示技术的发展与分类以凸显出光场显示的优势;阐述了光场显示的概念与意义;介绍了光场显示中的集成成像光场显示、投影光场显示和层光场显示的发展及主要技术挑战.强调了在新形势下对光场显示的新要求,并提出对中国发展光场显示的建议,即加强技术创新平台建设,推动光场显示与其他前沿技术的融合,重点攻克关键技术和产业链瓶颈,促进产学研合作,以确保在全球高科技领域的竞争力.
Keyword ：
3D显示 3D显示 光场显示 光场显示 层光场显示 层光场显示 投影光场显示 投影光场显示 集成成像光场显示 集成成像光场显示
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| GB/T 7714 | 彭玉颜 , 康家欣 , 周雄图 et al. 光场显示研发进展 [J]. | 科技导报 , 2025 , 43 (2) : 34-41 . |
| MLA | 彭玉颜 et al. "光场显示研发进展" . | 科技导报 43 . 2 (2025) : 34-41 . |
| APA | 彭玉颜 , 康家欣 , 周雄图 , 张永爱 , 郭太良 , 吴朝兴 . 光场显示研发进展 . | 科技导报 , 2025 , 43 (2) , 34-41 . |
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Developing micro- and nano-scaled full-color pixelation is crucial for advancing future display technologies. Transmission metasurface structural color (TMSC) shows promise for integrated displays due to its high resolution and stability. However, improving the color gamut and tunability of TMSC remains a challenge. In this study, we modified the conventional single-metal metagrating (Ag-Al2O3) by replacing the Ag grating layer with an Al-Al2O3-Ag hybrid grating layer. This novel TMSC based on the mixed metagrating achieves unique transmission spectra under TM polarization light, featuring a single peak with minimal sidebands, and near-zero transmission under TE polarization light. This design enables ultra-high color purity and switchable colors through polarization adjustment. The metagrating effectively blocks transmission sidebands by leveraging interactions between the top Al grating layer and the Al2O3 sandwich grating layer. Under TM polarization light, the TMSC using this mixed metagrating covers an expansive color gamut-173% sRGB space and 124% Adobe RGB space-nearly achieving full hue and high purity. Conversely, under TE polarization light, the TMSC based on the mixed metagrating achieves near-zero transmission, ideal for a perfect dark mode. Moreover, the proposed TMSC design allows for full hue adjustment of individual pixels by varying the incident angle under TM polarization light. Under TE polarization light, the dark mode remains stable regardless of incident angle variations. The metagrating holds significant potential for applications in displays, high-density information storage, optical encryption, and beyond.
Keyword ：
Dynamic display Dynamic display Full colorization Full colorization Large color gamut Large color gamut Metagrating Metagrating Transmission metasurface structural color Transmission metasurface structural color
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| GB/T 7714 | Zhang, Jiawei , Peng, Yuyan , Zou, Zhenyou et al. Ultraly high saturation and high contrast tunable transmission metagrating structural color for dynamic display [J]. | OPTICS COMMUNICATIONS , 2025 , 577 . |
| MLA | Zhang, Jiawei et al. "Ultraly high saturation and high contrast tunable transmission metagrating structural color for dynamic display" . | OPTICS COMMUNICATIONS 577 (2025) . |
| APA | Zhang, Jiawei , Peng, Yuyan , Zou, Zhenyou , Weng, Shuchen , Yang, Weiquan , Zhou, Xiongtu et al. Ultraly high saturation and high contrast tunable transmission metagrating structural color for dynamic display . | OPTICS COMMUNICATIONS , 2025 , 577 . |
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With the development of the economy and science, information technology has become increasingly integrated into modern life, making information encryption crucial. The molecular arrangement of cholesteric liquid crystals (CLCs) exhibits a unique helical structure, which provides excellent bistability. This molecular arrangement can be changed under the action of an electric field, consequently changing the transmittance of light. The triboelectric nanogenerator (TENG) is a novel energy-harvesting system that can convert mechanical energy into electrical energy to power small devices. In this research, the optical properties of a CLC and the energy independence of a TENG were utilized to support an information encryption system for data security, and in this paper, a feather-based, horizontal, sliding TENG that offers a voltage range adjustable between 30 and 300 V to facilitate switching between the planar and the focal cone textures of CLCs is proposed. Moreover, when a self-powered CLC was combined with a convolutional neural network, the accuracy of message transmission reached more than 98 %; thus, a message encryption transmission system with good portability and low cost was realized.
Keyword ：
Cholesteric liquid crystals Cholesteric liquid crystals Encrypted information Encrypted information Self-powered Self-powered Smart glass Smart glass Triboelectric nanogenerator Triboelectric nanogenerator
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| GB/T 7714 | Chen, Wandi , Kang, Jiaxin , Zhang, Jiazhen et al. An information display and encrypted transmission system based on a triboelectric nanogenerator and a cholesteric liquid crystal [J]. | NANO ENERGY , 2025 , 134 . |
| MLA | Chen, Wandi et al. "An information display and encrypted transmission system based on a triboelectric nanogenerator and a cholesteric liquid crystal" . | NANO ENERGY 134 (2025) . |
| APA | Chen, Wandi , Kang, Jiaxin , Zhang, Jiazhen , Zhang, Yongai , Zhou, Xiongtu , Yan, Qun et al. An information display and encrypted transmission system based on a triboelectric nanogenerator and a cholesteric liquid crystal . | NANO ENERGY , 2025 , 134 . |
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The wavelength tunable and environmentally friendly InP quantum dots are considered one of the most powerful alternatives to cadmium-based quantum dots, and the luminescent devices prepared with them also show great potential. There is still room for improvement in the synthesis methods and device applications of InP based quantum dots. In this work, we report one pot synthesis route for InP/ZnSe/ZnSeS/ZnS green QDs based on tris (dimethylamino)phosphine (DMP) phosphorus by using the strategy of multi shell coating and gradient heating to reduce surface defects of quantum dots. The shell structure, dosage, and growth temperature have all been taken into account in order to explore better performance of InP QDs. The synthesized green quantum dots have 86 % PLQY and a full width at half maximum of 36 nm. In addition, the synthesized green InP quantum dots are applied in AC QLED devices. The experimental results show that the luminescence intensity is affected by the driving voltage and frequency, which is similar to the working mode of non-carrier-injected emitting devices. And there is a matching value between the voltage and frequency.
Keyword ：
Alternating current Alternating current Aminophosphine Aminophosphine Indium phosphide Indium phosphide Quantum dots Quantum dots Single-terminal carrier-injection Single-terminal carrier-injection
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| GB/T 7714 | Lin, Jianpu , Zhang, Shengjie , Du, Lingfeng et al. Improved InP/ZnSe/ZnSeS/ZnS quantum dots for single-terminal carrier-injection light-emitting devices [J]. | OPTICAL MATERIALS , 2025 , 159 . |
| MLA | Lin, Jianpu et al. "Improved InP/ZnSe/ZnSeS/ZnS quantum dots for single-terminal carrier-injection light-emitting devices" . | OPTICAL MATERIALS 159 (2025) . |
| APA | Lin, Jianpu , Zhang, Shengjie , Du, Lingfeng , Zhang, Baiquan , Zhou, Xiongtu , Zhang, Yongai et al. Improved InP/ZnSe/ZnSeS/ZnS quantum dots for single-terminal carrier-injection light-emitting devices . | OPTICAL MATERIALS , 2025 , 159 . |
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This study presents a metal-semiconductor-metal (MSM) and micro-light-emitting diode (mu LED) integrated device (MSM-mu LED) without additional epitaxial growth, which demonstrates excellent performance in ultraviolet (UV) detection and optoelectronic modulation. By employing an approach that combines vertical and lateral integration, the rapid response characteristic of the MSM is utilized to control the current required to activate the mu LED, thereby enhancing the LED's luminous efficiency. The MSM-mu LED device was simulated using Silvaco TCAD software, by optimizing the device structure parameters, such as doping concentration, material thickness, and electrode length, and adjusting the wavelength and intensity of ultraviolet light, the photocurrent value was enhanced to be approximately 6 orders of magnitude higher than the dark current, successfully achieving microampere-level currents to illuminate the mu LED. Under irradiation at 365 nm wavelength, the device exhibited maximum photocurrent. Experimental validation confirmed that MSM-mu LED exhibited significant photocurrent enhancement under UV illumination, indicating its promising potential for high-performance applications in environmental monitoring, high-speed optical communication, and biomedical imaging.
Keyword ：
GaN GaN homogeneous integration homogeneous integration micro LED micro LED MSM-mu LED MSM-mu LED UV UV
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| GB/T 7714 | Chen, Chao , Su, Wenjuan , Lin, Juncheng et al. Design and Verification of Optoelectronic Performance of Full GaN MSM and μLED Homogeneous Integrated Devices [J]. | ACS APPLIED ELECTRONIC MATERIALS , 2025 , 7 (1) : 552-559 . |
| MLA | Chen, Chao et al. "Design and Verification of Optoelectronic Performance of Full GaN MSM and μLED Homogeneous Integrated Devices" . | ACS APPLIED ELECTRONIC MATERIALS 7 . 1 (2025) : 552-559 . |
| APA | Chen, Chao , Su, Wenjuan , Lin, Juncheng , Fan, Huichen , Lin, Yibin , Ye, Jinyu et al. Design and Verification of Optoelectronic Performance of Full GaN MSM and μLED Homogeneous Integrated Devices . | ACS APPLIED ELECTRONIC MATERIALS , 2025 , 7 (1) , 552-559 . |
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Wind conditions are crucial in agricultural production, and wind vectors play a significant role in agricultural planting plans. However, traditional anemometers rely on external power sources such as lithium batteries, while wind energy in farmlands is usually neglected. This paper proposes an intelligent wind vector monitoring system based on a dual-module triboelectric nanogenerator (DM-TENG), which consists of a fan-blade type soft-contact triboelectric nanogenerator (FBTSC-TENG) and a disc-shaped triboelectric nanogenerator (DS-TENG). FBTSC-TENG collects wind energy in the environment to power the temperature and humidity sensors, while determining wind speed through the frequency of voltage pulses. DS-TENG can monitor wind direction, identifying 8 wind directions through output pulse signals and deep learning algorithms. Therefore, the DM-TENG proposed in this study is expected to play a significant role in the field of smart agriculture in the future.
Keyword ：
smartagriculture smartagriculture triboelectric nanogenerator triboelectric nanogenerator wind direction wind direction wind energy wind energy wind vector monitoring system wind vector monitoring system
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| GB/T 7714 | Tang, Heng , Chen, Wandi , Peng, Zhigang et al. Intelligent Wind Vector Monitoring System Based on Wind Energy Harvesting [J]. | ACS APPLIED ELECTRONIC MATERIALS , 2025 , 7 (2) : 901-909 . |
| MLA | Tang, Heng et al. "Intelligent Wind Vector Monitoring System Based on Wind Energy Harvesting" . | ACS APPLIED ELECTRONIC MATERIALS 7 . 2 (2025) : 901-909 . |
| APA | Tang, Heng , Chen, Wandi , Peng, Zhigang , Zhang, Yu , Zhou, Xiongtu , Wu, Chaoxing et al. Intelligent Wind Vector Monitoring System Based on Wind Energy Harvesting . | ACS APPLIED ELECTRONIC MATERIALS , 2025 , 7 (2) , 901-909 . |
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以超高密度Cu/Sn微凸点和Cu/SnAg微凸点为研究对象,采用COMSOL软件建立仿真模型,研究了不同焊料凸点高度对键合可靠性的影响;采用电镀法制备Cu/Sn凸点阵列和Cu/SnAg凸点阵列,重点对界面处金属间化合物(Intermetallic compounds,IMC)进行研究.结果表明,Cu/SnAg凸点高度的增加有利于降低凸点键合界面应力,从而提高芯片键合可靠性.金属凸点尺寸越小,界面处金属间化合物生长越快,空洞数量越多.雾锡凸点的晶粒尺寸大于亮锡凸点,而且晶界数量较少,使得凸点界面上IMC的生长速度较慢.因此,雾锡凸点能够有效减少凸点界面空洞的形成,SnAg合金替代纯锡材料可以进一步减少凸点界面空洞的形成.通过优化工艺条件,成功制备出点间距为8 μm,像素阵列为1 920×1 080的超高密度Cu/SnAg金属凸点.
Keyword ：
Cu/SnAg凸点 Cu/SnAg凸点 Cu/Sn凸点 Cu/Sn凸点 电镀 电镀 金属间化合物 金属间化合物
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| GB/T 7714 | 罗灿琳 , 林畅 , 曾煌杰 et al. 电镀法制备超高密度Cu/Sn凸点和Cu/SnAg凸点及其微观形貌研究 [J]. | 光电子技术 , 2025 , 45 (1) : 10-17 . |
| MLA | 罗灿琳 et al. "电镀法制备超高密度Cu/Sn凸点和Cu/SnAg凸点及其微观形貌研究" . | 光电子技术 45 . 1 (2025) : 10-17 . |
| APA | 罗灿琳 , 林畅 , 曾煌杰 , 张永爱 , 孙捷 , 严群 et al. 电镀法制备超高密度Cu/Sn凸点和Cu/SnAg凸点及其微观形貌研究 . | 光电子技术 , 2025 , 45 (1) , 10-17 . |
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As the core component of a nanopixel light-emitting display, the GaN-based nanoscale light-emitting diode (nLED) faces the problem of low electroluminescence efficiency resulting from the introduction of surface defects when its lateral size is reduced to the nanometer scale. Thus, reducing the surface defect density is an important direction in nLED-related research. This study, with the triboelectric nanogenerator-driven LED as its inspiration, reveals that surface defects have a positive impact on the performance of nLEDs driven by Maxwell's displacement current, and we call the related driving mode the noncarrier injection mode. Through finite element simulations, we studied the dynamic variations of the carrier concentration, the energy band, and the light emission rate to analyze the impact of the behavior of surface defect excitation on device performance. We found that surface defects can act as electron pumps under the combined effect of the reverse electric field and the built-in electric field and can generate carriers through surface defect excitation to increase the intensity of noncarrier injection luminescence, which is completely different from the traditional understanding of surface defects. In addition, we propose a tapered structure to further increase the light emission rate by regulating the behaviors of radiation recombination and surface defect excitation. The results of this work open a new perspective on the impacts of surface defects on nLEDs and provide significant information for additional applications of Maxwell's displacement current. © 2024 Elsevier Ltd
Keyword ：
Maxwell's displacement current Maxwell's displacement current Nano-electronics Nano-electronics Nano-light-emitting diodes Nano-light-emitting diodes Noncarrier injection mode Noncarrier injection mode Surface defects Surface defects
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| GB/T 7714 | Li, W. , Zhang, S. , Wang, K. et al. Positive impact of surface defects on Maxwell's displacement current-driven nano-LEDs: The application of TENG technology [J]. | Nano Energy , 2024 , 129 . |
| MLA | Li, W. et al. "Positive impact of surface defects on Maxwell's displacement current-driven nano-LEDs: The application of TENG technology" . | Nano Energy 129 (2024) . |
| APA | Li, W. , Zhang, S. , Wang, K. , Qiu, J. , Li, J. , Zhu, J. et al. Positive impact of surface defects on Maxwell's displacement current-driven nano-LEDs: The application of TENG technology . | Nano Energy , 2024 , 129 . |
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Non-destructive and accurate inspection of gallium nitride light-emitting diode (GaN-LED) epitaxial wafers is important to GaN-LED technology. However, the conventional electroluminescence inspection, the photoluminescence inspection, and the automated optical inspection cannot fulfill the complex technical requirements. In this work, an inspection method and an operation system based on soft single-contact operation, namely, single-contact electroluminescence (SC-EL) inspection, are proposed. The key component of the SC-EL inspection system is a soft conductive probe with an optical fiber inside, and an AC voltage (70V pp, 100 kHz) is applied between the probe and the ITO electrode under the LED epitaxial wafer. The proposed SC-EL inspection can measure both the electrical and optical parameters of the LED epitaxial wafer at the same time, while not causing mechanical damage to the LED epitaxial wafer. Moreover, it is demonstrated that the SC-EL inspection has a higher electroluminescence wavelength accuracy than photoluminescence inspection. The results show that the non-uniformity of SC-EL inspection is 444.64%, which is much lower than that of photoluminescence inspection. In addition, the obtained electrical parameters from SC-EL can reflect the reverse leakage current (I s) level of the LED epitaxial wafer. The proposed SC-EL inspection can ensure high inspection accuracy without causing damage to the LED epitaxial wafer, which holds promising application in LED technology. © 2024 Chinese Laser Press.
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| GB/T 7714 | Su, H. , Qiu, J. , Li, J. et al. Non-destructive electroluminescence inspection for LED epitaxial wafers based on soft single-contact operation [J]. | Photonics Research , 2024 , 12 (8) : 1776-1784 . |
| MLA | Su, H. et al. "Non-destructive electroluminescence inspection for LED epitaxial wafers based on soft single-contact operation" . | Photonics Research 12 . 8 (2024) : 1776-1784 . |
| APA | Su, H. , Qiu, J. , Li, J. , Chen, R. , Le, J. , Lei, X. et al. Non-destructive electroluminescence inspection for LED epitaxial wafers based on soft single-contact operation . | Photonics Research , 2024 , 12 (8) , 1776-1784 . |
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A key challenge in realizing ultrahigh-resolution displays is the efficient preparation of ultrasmall-sized (USS) light-emitting diodes (LEDs). Today, GaN-based LEDs are mainly prepared through dry etching processes. However, it is difficult to achieve efficient and controllable etching of USS LED with high aspect ratios, and LED sidewalls will appear after etching, which will have a negative impact on the device itself. Herein, a method for preparing USS LED based on GaN epitaxial wafers is reported (on two types of wafers, i.e., with p-GaN fully activated and unactivated). F−ions are injected into the intentionally exposed areas on the two types of wafers to achieve device isolation. The area under the micro-/nanosized protective masks (0.5, 0.8, 1, 3, 5, 7, 9, and 10 µm wide Ni/Au stripes) are the LED lighting areas. The LED on the p-GaN unactivated wafer (UAW) requires further activation. The Ni/Au mask not only serves as the p-electrode of LED but also Ni as a hydrogen (H) removing metal covering the surface of p-GaN UAW that can desorb H from a Mg element in the film at relatively low temperatures, thereby achieving the selective activation of LED lighting areas. Optoelectronic characterization shows that micro-/nano-sized LED arrays with individual-pixel control were successfully fabricated on the two types of wafers. It is expected that the demonstrated method will provide a new way toward realizing ultrahigh-resolution displays. Analyzing the changes in the current flowing through LED (before and after selective activation) on the F−injected p-GaN UAW, it is believed that depositing H removing metal on p-GaN UAW could possibly realize the device array through the selective activation only (i.e., without the need for ion implantation), offering a completely new insight. © 2024 Optica Publishing Group. All rights
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| GB/T 7714 | Pan, K. , Zhang, K. , Li, Y. et al. Ultrasmall-sized light-emitting diodes fabricated by ion implantation based on GaN epitaxial wafers with fully activated or unactivated p-GaN [J]. | Optics Letters , 2024 , 49 (17) : 4835-4838 . |
| MLA | Pan, K. et al. "Ultrasmall-sized light-emitting diodes fabricated by ion implantation based on GaN epitaxial wafers with fully activated or unactivated p-GaN" . | Optics Letters 49 . 17 (2024) : 4835-4838 . |
| APA | Pan, K. , Zhang, K. , Li, Y. , Li, Q. , Zhou, Y. , Yang, T. et al. Ultrasmall-sized light-emitting diodes fabricated by ion implantation based on GaN epitaxial wafers with fully activated or unactivated p-GaN . | Optics Letters , 2024 , 49 (17) , 4835-4838 . |
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