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author:

Chen, Guixiong (Chen, Guixiong.) [1] | Weng, Yalian (Weng, Yalian.) [2] | Sun, Fan (Sun, Fan.) [3] | Hong, Deming (Hong, Deming.) [4] | Zhou, Xiongtu (Zhou, Xiongtu.) [5] (Scholars:周雄图) | Guo, Tailiang (Guo, Tailiang.) [6] (Scholars:郭太良) | Zhang, Yongai (Zhang, Yongai.) [7] (Scholars:张永爱) | Yan, Qun (Yan, Qun.) [8] | Wu, Chaoxing (Wu, Chaoxing.) [9] (Scholars:吴朝兴) | Sun, Lei (Sun, Lei.) [10] (Scholars:孙磊)

Indexed by:

EI SCIE

Abstract:

Thin film encapsulation (TFE) with high barrier performance and mechanical reliability is essential and challenging for flexible organic light-emitting diodes (OLEDs). In this work, SF6 plasma treatments were introduced for surface modifications of acrylic in Al2O3/acrylic laminates fabricated by atomic layer deposition (ALD) and ink-jet printing (IJP). It was found that micro-/nano-structures and surface fluoridation appeared on the surface of acrylic, and could be modulated by the discharge power and irradiation of plasma treatment. The water vapor transmission rates (WVTR) of Al2O3/acrylic multi-layers decreased evidently because of reducing surface polarity and strong cross-link of acrylic after plasma treatments. Furthermore, the rugged surface and relieved residual stress resulted from etching and heating of acrylic could enhance the mechanical property remarkably. The plasma treated Al2O3/acrylic multi-layers with only 3 dyads exhibited a low WVTR value of 1.02 x 10-6 g/m2/ day and more stable mechanical property under 200 iterations blending test by comparative measurements, proving that the introduction of SF6 plasma surface modifications could improve simultaneously the barrier performance and mechanical reliability prominently of the inorganic/organic multi-layers with no need of extra neutral axis design.

Keyword:

Mechanical reliability Plasma treatment Surface fluorination Thin film encapsulation (TFE) Water vapor transmission rates (WVTR)

Community:

  • [ 1 ] [Chen, Guixiong]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350116, Fujian, Peoples R China
  • [ 2 ] [Weng, Yalian]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350116, Fujian, Peoples R China
  • [ 3 ] [Sun, Fan]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350116, Fujian, Peoples R China
  • [ 4 ] [Hong, Deming]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350116, Fujian, Peoples R China
  • [ 5 ] [Zhou, Xiongtu]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350116, Fujian, Peoples R China
  • [ 6 ] [Guo, Tailiang]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350116, Fujian, Peoples R China
  • [ 7 ] [Zhang, Yongai]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350116, Fujian, Peoples R China
  • [ 8 ] [Yan, Qun]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350116, Fujian, Peoples R China
  • [ 9 ] [Wu, Chaoxing]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350116, Fujian, Peoples R China
  • [ 10 ] [Zhou, Xiongtu]Fujian Sci & Tegy Innovat Lab Optoelect Inform, Fuzhou 350116, Fujian, Peoples R China
  • [ 11 ] [Guo, Tailiang]Fujian Sci & Tegy Innovat Lab Optoelect Inform, Fuzhou 350116, Fujian, Peoples R China
  • [ 12 ] [Zhang, Yongai]Fujian Sci & Tegy Innovat Lab Optoelect Inform, Fuzhou 350116, Fujian, Peoples R China
  • [ 13 ] [Yan, Qun]Fujian Sci & Tegy Innovat Lab Optoelect Inform, Fuzhou 350116, Fujian, Peoples R China
  • [ 14 ] [Wu, Chaoxing]Fujian Sci & Tegy Innovat Lab Optoelect Inform, Fuzhou 350116, Fujian, Peoples R China
  • [ 15 ] [Sun, Lei]Fuzhou Univ, Zhicheng Coll, Fuzhou 350002, Peoples R China

Reprint 's Address:

  • 周雄图 张永爱 吴朝兴

    [Zhou, Xiongtu]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350116, Fujian, Peoples R China;;[Zhang, Yongai]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350116, Fujian, Peoples R China;;[Wu, Chaoxing]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350116, Fujian, Peoples R China

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Source :

ORGANIC ELECTRONICS

ISSN: 1566-1199

Year: 2021

Volume: 97

3 . 8 6 8

JCR@2021

2 . 7 0 0

JCR@2023

ESI Discipline: PHYSICS;

ESI HC Threshold:87

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 7

SCOPUS Cited Count: 11

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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