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author:

Weng, Yalian (Weng, Yalian.) [1] | Chen, Guixiong (Chen, Guixiong.) [2] | Zhou, Xiongtu (Zhou, Xiongtu.) [3] (Scholars:周雄图) | Yan, Qun (Yan, Qun.) [4] | Guo, Tailiang (Guo, Tailiang.) [5] (Scholars:郭太良) | Zhang, Yongai (Zhang, Yongai.) [6] (Scholars:张永爱)

Indexed by:

EI Scopus SCIE

Abstract:

Bi-functional thin film with both selected light extraction and reliable moisture vapor barrier was proposed for simultaneous light management and encapsulation in the fields of lighting and display. Atomic layer deposition (ALD) was employed to obtain TiO2 and Al2O3 films with high uniformity, forming distributed Bragg reflector (DBR) structure. The DBRs exhibited excellent and tunable optical properties, as well as reliable moisture barrier performance. With increasing the DBR layers, the transmittances decreased obviously. The transmittance in the blue light region was as low as 0.66% for DBR with 6.5 pairs and the water vapor transmission rates value was 3.06 x 10(-5) g m(-2) d(-1) for DBR with 4.5 pairs. These DBRs were integrated in the red quantum dot (QD) based color converters excited by blue LED, enabling an obvious increase in red emission and a strong decrease in blue light transmittance. Furthermore, these DBRs can prolong the lifetime of QDs evidently by isolating the QDs from the moisture (oxygen) vapor. These results highlight the potentials for the exploitation of DBRs fabricated using ALD in the application of lighting and display devices based on QD photoluminescence and electroluminescence.

Keyword:

atomic layer deposition (ALD) color conversion distributed Bragg reflector (DBR) film encapsulation water vapor transmission rates (WVTR)

Community:

  • [ 1 ] [Weng, Yalian]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350002, Fujian, Peoples R China
  • [ 2 ] [Chen, Guixiong]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350002, Fujian, Peoples R China
  • [ 3 ] [Zhou, Xiongtu]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350002, Fujian, Peoples R China
  • [ 4 ] [Yan, Qun]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350002, Fujian, Peoples R China
  • [ 5 ] [Guo, Tailiang]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350002, Fujian, Peoples R China
  • [ 6 ] [Zhang, Yongai]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350002, Fujian, Peoples R China

Reprint 's Address:

  • 周雄图 张永爱

    [Zhou, Xiongtu]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350002, Fujian, Peoples R China;;[Zhang, Yongai]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350002, Fujian, Peoples R China

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Source :

NANOTECHNOLOGY

ISSN: 0957-4484

Year: 2019

Issue: 8

Volume: 30

3 . 5 5 1

JCR@2019

2 . 9 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:236

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 20

SCOPUS Cited Count: 20

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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