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author:

Peng, Yuyan (Peng, Yuyan.) [1] | Weng, Yalian (Weng, Yalian.) [2] | Chen, Guixiong (Chen, Guixiong.) [3] | Hong, Deming (Hong, Deming.) [4] | Wang, Wenwen (Wang, Wenwen.) [5] | Chen, Chunliang (Chen, Chunliang.) [6] | Zhou, Xiongtu (Zhou, Xiongtu.) [7] (Scholars:周雄图) | Zhang, Yongai (Zhang, Yongai.) [8] (Scholars:张永爱) | Wu, Chaoxing (Wu, Chaoxing.) [9] (Scholars:吴朝兴) | Guo, Tailiang (Guo, Tailiang.) [10] (Scholars:郭太良) | Yan, Qun (Yan, Qun.) [11]

Indexed by:

EI Scopus SCIE

Abstract:

Thin film encapsulation (TFE) with high barrier performance and mechanical reliability is essential and chal-lenging for the reliable operation of flexible organic light-emitting diodes (OLEDs). To break the trade-off relationship between high flexibility and low permeability, this work proposed an Al2O3/acrylic multi-layered structure with wavy stacking interfaces to reduce the tensile strain of the brittle Al2O3 film under bending. It was found from simulation analysis that 3-dyad wavy Al2O3/acrylic multi-layered structures with periods in the ranges of 500-1500 nm and amplitudes in the ranges of 600-1600 nm were preferred due to a smaller maximum stress under bending. A novel approach to generate wavy structures with controllable periods and amplitudes was proposed by combining argon plasma treatment and soft-lithography. The findings suggest that the water vapor transmission rate (WVTR) of a 3-dyad wavy Al2O3/acrylic multi-layer was 3.18 x 10-5 g/m2/day after 100-iteration bending with the bending radius of 1 cm, corresponding to the tensile strain exceeding 1.09%. The lifetime of OLED encapsulated using corresponding Al2O3/acrylic multi-layers with wavy structures and under the same bending condition was around 50 h, showing a 40% increase compared to that without wavy structures. The wavy structures can improve the mechanical properties of Al2O3/acrylic remarkably.

Keyword:

Mechanical reliability Plasma treatment Thin film encapsulation Water vapor transmission rates Wavy structure

Community:

  • [ 1 ] [Peng, Yuyan]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 2 ] [Chen, Guixiong]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 3 ] [Hong, Deming]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 4 ] [Wang, Wenwen]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 5 ] [Zhou, Xiongtu]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 6 ] [Zhang, Yongai]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 7 ] [Wu, Chaoxing]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 8 ] [Guo, Tailiang]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 9 ] [Yan, Qun]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 10 ] [Weng, Yalian]Huaqiao Univ, Xiamen 361021, Fujian, Peoples R China
  • [ 11 ] [Chen, Chunliang]Fuzhou Melbourne Polytech, Fuzhou 350108, Fujian, Peoples R China
  • [ 12 ] [Zhou, Xiongtu]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Fujian, Peoples R China
  • [ 13 ] [Zhang, Yongai]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Fujian, Peoples R China
  • [ 14 ] [Wu, Chaoxing]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Fujian, Peoples R China
  • [ 15 ] [Guo, Tailiang]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Fujian, Peoples R China
  • [ 16 ] [Yan, Qun]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Fujian, Peoples R China

Reprint 's Address:

  • [Zhou, Xiongtu]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China;;[Zhang, Yongai]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China;;[Wu, Chaoxing]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China;;

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Source :

ORGANIC ELECTRONICS

ISSN: 1566-1199

Year: 2023

Volume: 117

2 . 7

JCR@2023

2 . 7 0 0

JCR@2023

ESI Discipline: PHYSICS;

ESI HC Threshold:30

JCR Journal Grade:2

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 6

SCOPUS Cited Count: 6

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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