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author:

Chen, Guixiong (Chen, Guixiong.) [1] | Weng, Yalian (Weng, Yalian.) [2] | Sun, Fan (Sun, Fan.) [3] | Hong, Deming (Hong, Deming.) [4] | Zhou, Xiongtu (Zhou, Xiongtu.) [5] | Guo, Tailiang (Guo, Tailiang.) [6] | Zhang, Yongai (Zhang, Yongai.) [7] | Yan, Qun (Yan, Qun.) [8] | Wu, Chaoxing (Wu, Chaoxing.) [9] | Sun, Lei (Sun, Lei.) [10]

Indexed by:

EI

Abstract:

Thin film encapsulation (TFE) with high barrier performance and mechanical reliability is essential and challenging for flexible organic light-emitting diodes (OLEDs). In this work, SF6 plasma treatments were introduced for surface modifications of acrylic in Al2O3/acrylic laminates fabricated by atomic layer deposition (ALD) and ink-jet printing (IJP). It was found that micro-/nano-structures and surface fluoridation appeared on the surface of acrylic, and could be modulated by the discharge power and irradiation of plasma treatment. The water vapor transmission rates (WVTR) of Al2O3/acrylic multi-layers decreased evidently because of reducing surface polarity and strong cross-link of acrylic after plasma treatments. Furthermore, the rugged surface and relieved residual stress resulted from etching and heating of acrylic could enhance the mechanical property remarkably. The plasma treated Al2O3/acrylic multi-layers with only 3 dyads exhibited a low WVTR value of 1.02 × 10−6 g/m2/day and more stable mechanical property under 200 iterations blending test by comparative measurements, proving that the introduction of SF6 plasma surface modifications could improve simultaneously the barrier performance and mechanical reliability prominently of the inorganic/organic multi-layers with no need of extra neutral axis design. © 2021 Elsevier B.V.

Keyword:

Alumina Aluminum oxide Atomic layer deposition Blending Dielectric materials Electric discharges Etching Ink jet printing Organic light emitting diodes (OLED) Plasma applications Reliability Thin films Water vapor

Community:

  • [ 1 ] [Chen, Guixiong]College of Physics and Information Engineering, Fuzhou University, Fuzhou; Fujian; 350116, China
  • [ 2 ] [Weng, Yalian]College of Physics and Information Engineering, Fuzhou University, Fuzhou; Fujian; 350116, China
  • [ 3 ] [Sun, Fan]College of Physics and Information Engineering, Fuzhou University, Fuzhou; Fujian; 350116, China
  • [ 4 ] [Hong, Deming]College of Physics and Information Engineering, Fuzhou University, Fuzhou; Fujian; 350116, China
  • [ 5 ] [Zhou, Xiongtu]College of Physics and Information Engineering, Fuzhou University, Fuzhou; Fujian; 350116, China
  • [ 6 ] [Zhou, Xiongtu]Fujian Science & Tegy Innovation Laboratory for Optoelectronic Information of China, Fuzhou; Fujian; 350116, China
  • [ 7 ] [Guo, Tailiang]College of Physics and Information Engineering, Fuzhou University, Fuzhou; Fujian; 350116, China
  • [ 8 ] [Guo, Tailiang]Fujian Science & Tegy Innovation Laboratory for Optoelectronic Information of China, Fuzhou; Fujian; 350116, China
  • [ 9 ] [Zhang, Yongai]College of Physics and Information Engineering, Fuzhou University, Fuzhou; Fujian; 350116, China
  • [ 10 ] [Zhang, Yongai]Fujian Science & Tegy Innovation Laboratory for Optoelectronic Information of China, Fuzhou; Fujian; 350116, China
  • [ 11 ] [Yan, Qun]College of Physics and Information Engineering, Fuzhou University, Fuzhou; Fujian; 350116, China
  • [ 12 ] [Yan, Qun]Fujian Science & Tegy Innovation Laboratory for Optoelectronic Information of China, Fuzhou; Fujian; 350116, China
  • [ 13 ] [Wu, Chaoxing]College of Physics and Information Engineering, Fuzhou University, Fuzhou; Fujian; 350116, China
  • [ 14 ] [Wu, Chaoxing]Fujian Science & Tegy Innovation Laboratory for Optoelectronic Information of China, Fuzhou; Fujian; 350116, China
  • [ 15 ] [Sun, Lei]Zhicheng College, Fuzhou University, Fuzhou; 350002, China

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Source :

Organic Electronics

ISSN: 1566-1199

Year: 2021

Volume: 97

3 . 8 6 8

JCR@2021

2 . 7 0 0

JCR@2023

ESI HC Threshold:87

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 11

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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