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author:

Sun, Fan (Sun, Fan.) [1] | Chen, Guixiong (Chen, Guixiong.) [2] | Zhou, Xiongtu (Zhou, Xiongtu.) [3] (Scholars:周雄图) | Wu, Chaoxing (Wu, Chaoxing.) [4] (Scholars:吴朝兴) | Sun, Lei (Sun, Lei.) [5] (Scholars:孙磊) | Yan, Qun (Yan, Qun.) [6] | Guo, Tailiang (Guo, Tailiang.) [7] (Scholars:郭太良) | Zhang, Yongai (Zhang, Yongai.) [8] (Scholars:张永爱)

Indexed by:

EI Scopus SCIE

Abstract:

Thin-film encapsulation (TFE) is essential and challenging for flexible organic/quantum dot light-emitting diodes (OLEDs/QLEDs). In this work, SiO2 nanoparticles were added into the NEA 121 polymer (s-NEA) to prolong the permeation pathways, showing good barrier property and high optical transparency. With increasing the concentration of SiO2 nanoparticles up to 20 mg/ml, the value of water vapor transmission rate (WVTR) decreased. A single s-NEA layer with silica concentration of 20 mg/ml and thickness of similar to 75 mu m exhibited WVTR of 2.5x10(-3) g/m(2)/day and light transmittance of above 80%. Al2O3 thin films fabricated using atomic layer deposition were inserted between s-NEA layers to form dyad-style Al2O3/s-NEA multilayers. The Al2O3 (60 nm)/s-NEA (20 mu m) multilayers with 3 units exhibited WVTR of 2.6x10(-5) g/m(2)/day and consistently demonstrated a significantly extended QLED lifetime.

Keyword:

Community:

  • [ 1 ] [Sun, Fan]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 2 ] [Chen, Guixiong]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 3 ] [Zhou, Xiongtu]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 4 ] [Wu, Chaoxing]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 5 ] [Yan, Qun]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 6 ] [Guo, Tailiang]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 7 ] [Zhang, Yongai]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 8 ] [Sun, Lei]Fuzhou Univ, Zhicheng Coll, Fuzhou 350002, Fujian, Peoples R China

Reprint 's Address:

  • 周雄图 张永爱

    [Zhou, Xiongtu]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China;;[Zhang, Yongai]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China

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Source :

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

ISSN: 0957-4522

Year: 2019

Issue: 24

Volume: 30

Page: 21089-21095

2 . 2 2

JCR@2019

2 . 8 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:236

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 3

SCOPUS Cited Count: 4

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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