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author:

Peng, Y. (Peng, Y..) [1] | Weng, Y. (Weng, Y..) [2] | Chen, G. (Chen, G..) [3] | Hong, D. (Hong, D..) [4] | Wang, W. (Wang, W..) [5] | Chen, C. (Chen, C..) [6] | Zhou, X. (Zhou, X..) [7] | Zhang, Y. (Zhang, Y..) [8] | Wu, C. (Wu, C..) [9] | Guo, T. (Guo, T..) [10] | Yan, Q. (Yan, Q..) [11]

Indexed by:

Scopus

Abstract:

Thin film encapsulation (TFE) with high barrier performance and mechanical reliability is essential and challenging for the reliable operation of flexible organic light-emitting diodes (OLEDs). To break the trade-off relationship between high flexibility and low permeability, this work proposed an Al2O3/acrylic multi-layered structure with wavy stacking interfaces to reduce the tensile strain of the brittle Al2O3 film under bending. It was found from simulation analysis that 3-dyad wavy Al2O3/acrylic multi-layered structures with periods in the ranges of 500–1500 nm and amplitudes in the ranges of 600–1600 nm were preferred due to a smaller maximum stress under bending. A novel approach to generate wavy structures with controllable periods and amplitudes was proposed by combining argon plasma treatment and soft-lithography. The findings suggest that the water vapor transmission rate (WVTR) of a 3-dyad wavy Al2O3/acrylic multi-layer was 3.18 × 10−5 g/m2/day after 100-iteration bending with the bending radius of 1 cm, corresponding to the tensile strain exceeding 1.09%. The lifetime of OLED encapsulated using corresponding Al2O3/acrylic multi-layers with wavy structures and under the same bending condition was around 50 h, showing a 40% increase compared to that without wavy structures. The wavy structures can improve the mechanical properties of Al2O3/acrylic remarkably. © 2023 Elsevier B.V.

Keyword:

Mechanical reliability Plasma treatment Thin film encapsulation Water vapor transmission rates Wavy structure

Community:

  • [ 1 ] [Peng, Y.]College of Physics and Information Engineering of Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 2 ] [Weng, Y.]Huaqiao University, Fujian, Xiamen, 361021, China
  • [ 3 ] [Chen, G.]College of Physics and Information Engineering of Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 4 ] [Hong, D.]College of Physics and Information Engineering of Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 5 ] [Wang, W.]College of Physics and Information Engineering of Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 6 ] [Chen, C.]Fuzhou Melbourne Polytechnic, Fujian, Fuzhou, 350108, China
  • [ 7 ] [Zhou, X.]College of Physics and Information Engineering of Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 8 ] [Zhou, X.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou, 350108, China
  • [ 9 ] [Zhang, Y.]College of Physics and Information Engineering of Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 10 ] [Zhang, Y.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou, 350108, China
  • [ 11 ] [Wu, C.]College of Physics and Information Engineering of Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 12 ] [Wu, C.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou, 350108, China
  • [ 13 ] [Guo, T.]College of Physics and Information Engineering of Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 14 ] [Guo, T.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou, 350108, China
  • [ 15 ] [Yan, Q.]College of Physics and Information Engineering of Fuzhou University, Fujian, Fuzhou, 350108, China
  • [ 16 ] [Yan, Q.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou, 350108, China

Reprint 's Address:

  • [Zhou, X.]College of Physics and Information Engineering of Fuzhou University, Fujian, China;;[Zhang, Y.]College of Physics and Information Engineering of Fuzhou University, Fujian, China;;[Wu, C.]College of Physics and Information Engineering of Fuzhou University, Fujian, China

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Source :

Organic Electronics

ISSN: 1566-1199

Year: 2023

Volume: 117

2 . 7

JCR@2023

2 . 7 0 0

JCR@2023

ESI HC Threshold:30

JCR Journal Grade:2

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 5

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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