Micro-light-emitting　diodes　(Micro-LEDs)　offer　many　unique　advantages　in　materials,　devices,　technologies,　and　process　applications.　In　the　future,　display　devices　will　evolve　in　the　direction　of　multi-functional　integration,　such　as　lighting,　swiching,　and　sensing,　Micro-LEDs　often　require　low-current-density　driving,　and　the　driving　mode　faces　considerable　challenges.　To　modulate　LED　devices　with　a　low　current　input,　herein,　we　propose　a　new　type　multifunctional　integrated　light-emitting　triode　device　that　integrates　light　emission　and　regulation　functions,　based　on　the　same　GaN　material　used　in　LEDs　and　process　platform.　The　device　shows　a　vertically　integrated　structure　comprising　bipolar　transistors　and　LEDs.　The　number　of　electrons　moving　to　the　light-emitting　active　layer　can　be　controlled　by　changing　the　base　voltage,　and　the　luminous　effect　of　the　device　is　simultaneously　adjusted.　Based　on　the　current　gain　effect　of　bipolar　junction　transistor　(BJT),　the　input　current　under　the　same　light　effect　can　be　reduced　from　the　milliampere　to　the　microampere　level　and　a　highly　linear　regulation　is　achieved　within　a　certain　voltage　range.　The　device　can　be　controlled　and　driven　using　low-power　signals　and　is　expected　to　become　a　revolutionary　technology　for　high-density　and　high-integration　smart　displays.　©　2022　Universitat　zu　Koln.　All　rights　reserved.