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学者姓名：孙捷
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Abstract ：
Waveguide coupling design is one of the most challenging topics in augmented reality (AR) near-eye displays (NED). The primary challenge stems from the necessity to simultaneously address two competing factors: the overall volume of the AR system and the occurrence of chromatic aberration. To address this issue, what we believe to be a novel tandem trilayer achromatic metasurface is specifically designed for waveguide coupling in AR NEDs, capable of achieving an achromatic effect in a nanometer-thin layer. By analyzing the influence of unit structure parameters on the phase delay of input electromagnetic waves, the optimal parameters are determined and the tandem trilayer achromatic metasurface structure is established. Simulation results show that the incident light can be deflected by 45 degrees, 46 degrees, and 45 degrees at wavelengths of 440 nm 470 nm, 520 nm 550 nm, and 620 nm 660 nm, respectively. The angular deviation error of the three primary colors is maintained lower than 1 degrees in the AR waveguide, ensuring a satisfactory achromatic effect. This design provides a new solution for developing ultra-thin and compact optical systems for full-color AR NEDs.
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| GB/T 7714 | Zhang, Kaixin , Fan, Zhengui , Chen, Kangkang et al. Tandem achromatic metasurface for waveguide coupling in full-color AR displays [J]. | OPTICS EXPRESS , 2025 , 33 (2) : 2019-2030 . |
| MLA | Zhang, Kaixin et al. "Tandem achromatic metasurface for waveguide coupling in full-color AR displays" . | OPTICS EXPRESS 33 . 2 (2025) : 2019-2030 . |
| APA | Zhang, Kaixin , Fan, Zhengui , Chen, Kangkang , Lin, Jiale , Huang, Chunlei , Nie, Junyang et al. Tandem achromatic metasurface for waveguide coupling in full-color AR displays . | OPTICS EXPRESS , 2025 , 33 (2) , 2019-2030 . |
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Nano-light-emitting diodes (LEDs) are ideal for ultra-high resolution displays due to their small size and high pixel density. However, traditional photolithography techniques fall short in meeting the requirements for nanoscale LED fabrication. Besides, as the size decreases and the specific surface area increases, non-radiative recombination generated by sidewalls defects becomes a significant issue, affecting the efficiency of nano-LEDs. To address this challenge, a nano-LED array with a single nanorod size of 800 nm was fabricated in this work by using nanosphere lithography and etching technology. Meanwhile, localized surface plasmons (LSPs) coupling technology was employed to enhance the PL efficiency of these nano-LEDs. By comparing with bare nano-LEDs, the PL intensity was boosted by about 43% and 129% when Ag and Ag@SiO2 nanoparticles were added separately. The existence of LSPs coupling process has been further confirmed through time-resolved photoluminescence measurement and finite element simulation analysis of different samples. The results provide compelling evidence for the LSPs coupling technology in enhancing the efficiency of nanoscale LEDs.
Keyword ：
micro-LED micro-LED nanorod nanorod photoluminescence photoluminescence
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| GB/T 7714 | Du, Zaifa , Fang, Aoqi , Tang, Penghao et al. Photoluminescence intensity enhancement of nanorod micro-LEDs via localized surface plasmon coupling [J]. | JOURNAL OF PHYSICS D-APPLIED PHYSICS , 2025 , 58 (5) . |
| MLA | Du, Zaifa et al. "Photoluminescence intensity enhancement of nanorod micro-LEDs via localized surface plasmon coupling" . | JOURNAL OF PHYSICS D-APPLIED PHYSICS 58 . 5 (2025) . |
| APA | Du, Zaifa , Fang, Aoqi , Tang, Penghao , Fan, Xinmin , Sun, Jie , Guo, Weiling et al. Photoluminescence intensity enhancement of nanorod micro-LEDs via localized surface plasmon coupling . | JOURNAL OF PHYSICS D-APPLIED PHYSICS , 2025 , 58 (5) . |
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Micro light-emitting diode (Micro-LED) displays have been considered promising candidate for reaching the augmented/virtual reality (AR/VR) display technology. However, it's challenging to attain the display application with ultra-high PPI (pixel per inch) and larger panel size in virtue of the difficulties of chip fabrication and subsequent bonding process. In this paper, we demonstrated a 0.7-inch active-matrix (AM) monolithic blue Micro-LED display integrated with silicon-based complementary metal oxide semiconductor (CMOS) driver by indium bump bonding. The display features a full high-definition (FHD) resolution of 1920 x 1080, a pixel pitch of 8 mu m, and a PPI of 3175. Key fabrication processes were investigated experimentally including self-alignment etching of mesa, elevation of the cathode to match the anode height, and preparation of uniform Micro-bumps array. The blue Micro-LED display exhibits excellent electrical and optical characteristic with a low forward voltage of 3.45 V. Moreover, a 3D model of integrated Micro-LED-CMOS was built by theoretical simulation and the finite element analysis was employed to evaluate the reliability of the heterogeneous integration. Finally, we illustrated the great prospect of the fabricated Micro-LED as the light engine for lightweight AR and spatial light field display.
Keyword ：
Active-Matrix Micro-LED Active-Matrix Micro-LED FHD-Resolution FHD-Resolution Finite element method Finite element method Micro-bumps array Micro-bumps array
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| GB/T 7714 | Li, Yang , Zhang, Kaixin , Zhi, Ting et al. 3175 PPI active-matrix Micro-LED device array towards full high-definition light engine [J]. | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , 2025 , 188 . |
| MLA | Li, Yang et al. "3175 PPI active-matrix Micro-LED device array towards full high-definition light engine" . | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 188 (2025) . |
| APA | Li, Yang , Zhang, Kaixin , Zhi, Ting , Tao, Tao , Huang, Chunlei , Nie, Junyang et al. 3175 PPI active-matrix Micro-LED device array towards full high-definition light engine . | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , 2025 , 188 . |
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Micro Light Emitting Diode (Micro-LED) technology, characterized by exceptional brightness, low power consumption, fast response, and long lifespan, holds significant potential for next-generation displays, yet its commercialization hinges on resolving challenges in high-density interconnect fabrication, particularly micrometer-scale bump formation. Traditional fabrication approaches such as evaporation enable precise bump control but face scalability and cost limitations, while electroplating offers lower costs and higher throughput but suffers from substrate conductivity requirements and uneven current density distributions that compromise bump-height uniformity. Emerging alternatives include electroless plating, which achieves uniform metal deposition on non-conductive substrates through autocatalytic reactions albeit with slower deposition rates; ball mounting and dip soldering, which streamline processes via automated solder jetting or alloy immersion but struggle with bump miniaturization and low yield; and photosensitive conductive polymers that simplify fabrication via photolithography-patterned composites but lack validated long-term stability. Persistent challenges in achieving micrometer-scale uniformity, thermomechanical stability, and environmental compatibility underscore the need for integrated hybrid processes, eco-friendly manufacturing protocols, and novel material innovations to enable ultra-high-resolution and flexible Micro-LED implementations. This review systematically compares conventional and emerging methodologies, identifies critical technological bottlenecks, and proposes strategic guidelines for industrial-scale production of high-density Micro-LED displays.
Keyword ：
ball mounting ball mounting bump fabrication bump fabrication dip soldering dip soldering electroless plating electroless plating electroplating electroplating evaporation evaporation high-density interconnects high-density interconnects Micro-LED Micro-LED photosensitive conductive polymers photosensitive conductive polymers
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| GB/T 7714 | Wu, Xin , Zhu, Xueqi , Wang, Shuaishuai et al. Bump-Fabrication Technologies for Micro-LED Display: A Review [J]. | MATERIALS , 2025 , 18 (8) . |
| MLA | Wu, Xin et al. "Bump-Fabrication Technologies for Micro-LED Display: A Review" . | MATERIALS 18 . 8 (2025) . |
| APA | Wu, Xin , Zhu, Xueqi , Wang, Shuaishuai , Tang, Xuehuang , Lang, Taifu , Belyaev, Victor et al. Bump-Fabrication Technologies for Micro-LED Display: A Review . | MATERIALS , 2025 , 18 (8) . |
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Currently, due to their cost-effectiveness and excellent physical properties, indium and tin are frequently utilized as bump materials for micro-light emitting diodes (Micro-LEDs) and silicon complementary metal-oxide-semiconductor (CMOS) devices to realize flip-chip bonding technology. However, as micro-LED pixel sizes and spacings decrease, forming indium and tin bumps that meet bonding requirements becomes challenging. These bumps are difficult to form an ideal spherical shape in the reflow process and easy to cause interconnection problems between adjacent pixels, adversely affecting device performance. To address this, we propose a novel Au-Au bump technology for micro-LED flip-chip bonding. This technology aims to effectively avoid interconnection issues while simplifying the micro-LED process flow and reducing production costs. Therefore, this paper designed a micro-LED device with 2822 PPI, 640 x 360 resolution, and 9 mu m pixel pitch to verify the feasibility of Au-Au micro-bump bonding. During this process, Au bump with diameter of 3.9 mu m and 6.5 mu m were fabricated for micro-LED array and CMOS driver chip respectively, followed by integrating them using the flip-chip bonding process. Cross-sectional analysis confirmed the high reliability and stability of the AuAu connection, enabling the micro-LED device to function properly. Furthermore, the Au bump micro-LED exhibits greater electroluminescence (EL) intensity and brightness than the In bump micro-LED, potentially due to the optical losses incurred during the preparation of indium bumps within the micro-LED chip.
Keyword ：
Au-Au micro-bump Au-Au micro-bump Flip-chip bonding Flip-chip bonding Micro-LED Micro-LED Narrow pitch Narrow pitch
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| GB/T 7714 | Yang, Tianxi , Sun, Jie , Zhou, Yijian et al. 2822 PPI active matrix micro-LED display fabricated via Au-Au micro-bump bonding technology [J]. | DISPLAYS , 2025 , 87 . |
| MLA | Yang, Tianxi et al. "2822 PPI active matrix micro-LED display fabricated via Au-Au micro-bump bonding technology" . | DISPLAYS 87 (2025) . |
| APA | Yang, Tianxi , Sun, Jie , Zhou, Yijian , Lu, Yuchen , Li, Jin , Huang, Zhonghang et al. 2822 PPI active matrix micro-LED display fabricated via Au-Au micro-bump bonding technology . | DISPLAYS , 2025 , 87 . |
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This paper reports on a micropillar micro-light-emitting diode (MP-mu LED) enhanced by a graphene conductive layer and SiO2-coated Ag nanoparticles (Ag/SiO2 NPs). The micropillar structure enables direct contact between Ag/SiO2 NPs and the quantum well (QW), leveraging localized surface plasmon resonance (LSPR) to enhance the emission of QW. The SiO2 coating on Ag serves as an insulating layer, preventing energy leakage through electron tunneling between QW-Ag and Ag-Ag interfaces. Graphene, used as a transparent conductive layer, integrates the individual micropillars into a cohesive structure, ensuring efficient current spreading and uniform light emission. Compared to plane mu LEDs of the same mesa size, the MP-mu LED with graphene transparent electrodes and LSPR enhancement shows an improvement of 44% in external quantum efficiency (EQE) and 45% in wall plug efficiency (WPE) at a current density of 1000 A/cm2. This study demonstrates the significant application potential of LSPR and micropillar structures in mu LED technology.
Keyword ：
graphene graphene localized surface plasmon resonance localized surface plasmon resonance micro-LED micro-LED micropillar micropillar
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| GB/T 7714 | Fang, Aoqi , Li, Qingqing , Liu, Jixin et al. Enhanced Light Emission of Micro LEDs Using Graphene-Connected Micropillar Structures and Ag/SiO2 Nanoparticles [J]. | ACS PHOTONICS , 2025 , 12 (3) : 1342-1350 . |
| MLA | Fang, Aoqi et al. "Enhanced Light Emission of Micro LEDs Using Graphene-Connected Micropillar Structures and Ag/SiO2 Nanoparticles" . | ACS PHOTONICS 12 . 3 (2025) : 1342-1350 . |
| APA | Fang, Aoqi , Li, Qingqing , Liu, Jixin , Du, Zaifa , Tang, Penghao , Xu, Hao et al. Enhanced Light Emission of Micro LEDs Using Graphene-Connected Micropillar Structures and Ag/SiO2 Nanoparticles . | ACS PHOTONICS , 2025 , 12 (3) , 1342-1350 . |
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This study introduces innovative structural enhancements in deep ultraviolet LEDs (DUV-LEDs) to optimize Performance. By implementing a 46.9 degrees sloped mesa sidewall, we have designed what we believe to be two novel structures: an n-electrode hole structure that extends the active region and an interrupted mesa structure that significantly enlarges the sidewall area. We investigated the effects of these structures on DUV-LED performance independently and demonstrated that both single structure devices surpass the performance of conventional DUV-LEDs. Notably, the interrupted mesa structure yields a more substantial performance enhancement at higher injection currents, while the n-electrode hole structure excels at lower currents. Meanwhile, this paper also prepared two kinds of DUV-LEDs with parallel and staggered rows of mesa and n-electrode holes by combining the above two single structures on the same device. Compared with the single structure device, the performance of these combined structure devices is further improved, in which the performance of the DUV-LEDs with staggered rows of mesa and n-electrode holes is even better, the external quantum efficiency (EQE) and wall plug efficiency (WPE) of 9.19% and 7.13% at 250 mA operating current, which is an improvement of 9.6% and 4.4%, respectively, compared with that of the conventional DUV-LEDs. Furthermore, the enhancement in performance will be augmented with an increase in current, due to the efficient conversion of active area to sidewall area. At 500 mA, the optical power of the staggered-array device is increased by 10.6% compared to conventional DUV-LEDs; at 1000 mA, the optical power is increased by 17.7%.
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| GB/T 7714 | Xu, Hao , Liu, ZiYuan , Guo, Weilng et al. Enhancing the performance of high-power DUV-LEDs with sloped sidewall by introducing N-electrode holes and interrupted mesa [J]. | OPTICS EXPRESS , 2025 , 33 (8) : 17253-17264 . |
| MLA | Xu, Hao et al. "Enhancing the performance of high-power DUV-LEDs with sloped sidewall by introducing N-electrode holes and interrupted mesa" . | OPTICS EXPRESS 33 . 8 (2025) : 17253-17264 . |
| APA | Xu, Hao , Liu, ZiYuan , Guo, Weilng , Sun, Jie , Fang, Aoqi , Liu, Jixin . Enhancing the performance of high-power DUV-LEDs with sloped sidewall by introducing N-electrode holes and interrupted mesa . | OPTICS EXPRESS , 2025 , 33 (8) , 17253-17264 . |
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Micro light-emitting diode (Micro-LED) is considered as an ideal candidate for near-eye, outdoor display, and light field photography applications. At present, the commercialization of full-color Micro-LED is limited by the mass transfer of red, green, and blue (R-B-G) sub-pixels. Hence, we proposed a full-color scheme of vertically stacked tricolor Micro-LED layers to avoid mass transfer, which owns over 1000 PPI (pixel per inch). In this solution, the sidewall-insulated via in the epilayer plays a critical role to achieve the electrical and mechanical integration of three monochromatic Micro-LEDs with Si-based complementary metal-oxide semiconductor (CMOS) driver. Therefore, the via processes of GaN-based epilayer were investigated systematically using available semiconductor processes in this article. The inductively coupled plasma (ICP) etching was employed to create the ultra-small micro-structure array using SiO2 thin film as hard mask. Sidewall-insulated vias were fabricated with different aperture sizes (9.3, 7.5, and 3.4 mu m) and a depth of about 4-mu m. The vias with large aspect ratio are completely satisfy the requirement of designed vertical interconnection. This study aims to provide valuable reference for the commercial progress of high-resolution and full-color Micro-LEDs.
Keyword ：
ICP etching ICP etching Micro-LED Micro-LED Sidewall-insulated GaN via Sidewall-insulated GaN via Vertical interconnection Vertical interconnection
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| GB/T 7714 | Li, Yang , Zhang, Kaixin , Yang, Tianxi et al. Investigation of ultrasmall sidewall-insulated GaN via with large aspect ratio for the strategy of vertically stacked full-color Micro-LEDs [J]. | OPTICS COMMUNICATIONS , 2025 , 575 . |
| MLA | Li, Yang et al. "Investigation of ultrasmall sidewall-insulated GaN via with large aspect ratio for the strategy of vertically stacked full-color Micro-LEDs" . | OPTICS COMMUNICATIONS 575 (2025) . |
| APA | Li, Yang , Zhang, Kaixin , Yang, Tianxi , Nie, Junyang , Li, Qiwei , Zhou, Yijian et al. Investigation of ultrasmall sidewall-insulated GaN via with large aspect ratio for the strategy of vertically stacked full-color Micro-LEDs . | OPTICS COMMUNICATIONS , 2025 , 575 . |
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Traditional semiconductor used as channel materials in driving transistors suffer from significant performance degradation as the semiconductor thickness is reduced. The two-dimensional (2D) materials with smooth, dangling-bond-free surfaces, represented by graphene, can be alternatives. Graphene boasts several advantages, including structural stability, ultra-thin thickness, near-total transparency, exceptional flexibility, and high mobility. Therefore, graphene field-effect transistors (GFETs) in the paper are used to drive Micro-light-emitting diodes (Micro-LEDs), key elements in next-generation advanced displays due to their high resolution, high brightness, high contrast, etc. Importantly, this study addresses the two major bottlenecks i.e. Micro-LEDs' mass transfer and graphene transfer. That is, monolithically integrated devices of Micro-LED and its driver GFET are designed and fabricated, bypassing the issue of traditional Micro-LEDs' mass transfer. For the first time, transfer-free method by plasma-enhanced chemical vapor deposition (PECVD) is used to grow graphene directly on GaN Micro-LED samples and prepared graphene transistors. This approach avoids doping and damage to the graphene during the transfer process, significantly shortens the growth time, and improves the fabrication efficiency. The devices possess broad applications potential and compatibility with semiconductor planar processes. This study paves the way for the transfer-free growth of graphene and the integration of Micro-LEDs with 2D materials transistors.
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| GB/T 7714 | Liu, Jixin , Sun, Jie , Mei, Yu et al. Monolithic integration of GaN Micro-LEDs to active matrix driving transistors made on transfer-free graphene [J]. | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , 2025 , 186 . |
| MLA | Liu, Jixin et al. "Monolithic integration of GaN Micro-LEDs to active matrix driving transistors made on transfer-free graphene" . | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 186 (2025) . |
| APA | Liu, Jixin , Sun, Jie , Mei, Yu , Fang, Aoqi , Tang, Penghao , Xu, Hao et al. Monolithic integration of GaN Micro-LEDs to active matrix driving transistors made on transfer-free graphene . | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , 2025 , 186 . |
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This study aims to achieve high-yield micro-LED chip bonding and thus further advance the innovation of micro-LED interconnection technology. In this research, an electroless plating method was used to achieve the highly uniform nickel bump arrays on a thin-film transistor (TFT) driver substrate. Initially, the photoresists AZ4620 and AZ2070 are chosen for the experiments, which can cover the step structure uniformly of TFT substrate. Subsequently, the shape of bumps on the TFT substrate influenced by the plasma treatment and the deposition time was investigated. The result indicated that microbump arrays with a uniformity of less than 1% could be successfully fabricated by employing a 5-min plasma treatment and incorporating surfactant additions at concentrations of 0.02%, and the process of preparation has a high repeatability, which lays a solid foundation for the subsequent electroless plating bonding, and provides a critical reference for the breakthrough of micro-LED interconnection key technology.
Keyword ：
electroless plating electroless plating highly uniform highly uniform micro-LED micro-LED nickel bump nickel bump
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| GB/T 7714 | Wang, Shuaishuai , Lu, Yu , Zhang, Kaixin et al. Electroless fabrication of super uniform nickel bumps on the TFT driver substrates for micro-LED display [J]. | JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY , 2025 . |
| MLA | Wang, Shuaishuai et al. "Electroless fabrication of super uniform nickel bumps on the TFT driver substrates for micro-LED display" . | JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY (2025) . |
| APA | Wang, Shuaishuai , Lu, Yu , Zhang, Kaixin , Huang, Zhonghang , Yang, Tianxi , Lin, Chang et al. Electroless fabrication of super uniform nickel bumps on the TFT driver substrates for micro-LED display . | JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY , 2025 . |
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