Structural Design and Optoelectronic Performance Study of Heterojunction Light-Emitting Transistor - Details

author：

Indexed by：

EI Scopus

Abstract：

Microlight-emitting　diodes　(Micro-LEDs)　offer　numerous　unique　advantages　in　terms　of　materials,　devices,　technologies,　and　process　applications.　To　enable　control　of　LEDs　with　low　current　input,　a　heterojunction　integrated　light-emitting　transistor　(H-LET)　device　is　proposed.　By　vertically　integrating　a　heterojunction　bipolar　transistor　(HBT)　with　a　Micro-LED,　a　multifunctional　optoelectronic　device　capable　of　light　emission,　modulation,　and　driving　functions　is　achieved.　The　structure　incorporates　wide-bandgap　aluminum　gallium　nitride　(AlGaN)　material　into　the　emission　region,　forming　a　heterojunction　with　GaN.　This　significantly　enhances　electron　injection　efficiency　and　current　gain.　Under　low　current　drive,　the　H-LET　device　achieves　a　current　gain　of　up　to　650.　This　results　in　superior　current　regulation　and　high-frequency　response　compared　to　homojunction　light-emitting　transistors.　The　H-LET　shows　significant　potential　for　applications　in　smart　lighting,　high-definition　displays,　radio　frequency　systems,　and　high-speed　communication.　©　2025　Wiley-VCH　GmbH.

Keyword：

Aluminum gallium nitride Gallium alloys Gallium nitride Heterojunction bipolar transistors High electron mobility transistors Integrated circuit design Junction gate field effect transistors Laser beams Network-on-chip

Community：

[ 1 ] [Lin, Juncheng]College of Advanced Manufacturing, Fuzhou University, Quanzhou; 362251, China
[ 2 ] [Su, Wenjuan]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 3 ] [Chen, Chao]College of Advanced Manufacturing, Fuzhou University, Quanzhou; 362251, China
[ 4 ] [Lin, Yibin]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
[ 5 ] [Ye, Jinyu]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 6 ] [Zhou, Xiongtu]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 7 ] [Zhou, Xiongtu]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
[ 8 ] [Guo, Tailiang]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 9 ] [Guo, Tailiang]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
[ 10 ] [Wu, Chaoxing]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 11 ] [Wu, Chaoxing]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
[ 12 ] [Zhang, Yongai]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 13 ] [Zhang, Yongai]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China

Reprint 's Address：

周雄图
[zhou, xiongtu]college of physics and information engineering, fuzhou university, fuzhou; 350108, china;;[zhou, xiongtu]fujian science & technology innovation laboratory for optoelectronic information of china, fuzhou; 350108, china

Email：

xtzhou@fzu.edu.cnchaoxing_wu@fzu.edu.cnyongaizhang@fzu.edu.cn

Show more details

Version：