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author:

Que, Si-Hua (Que, Si-Hua.) [1] | Wei, Li-Ming (Wei, Li-Ming.) [2] | Zhou, Xiong-Tu (Zhou, Xiong-Tu.) [3] (Scholars:周雄图) | Zhang, Yong-Ai (Zhang, Yong-Ai.) [4] (Scholars:张永爱) | Wu, Chao-Xing (Wu, Chao-Xing.) [5] (Scholars:吴朝兴) | Guo, Tai-Liang (Guo, Tai-Liang.) [6] (Scholars:郭太良) | Yan, Qun (Yan, Qun.) [7]

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EI PKU CSCD

Abstract:

A color tunable quantum-dot light emitting diode(QLED) with the structure of ITO/PEDOT: PSS/TFB/Mixed-QDs/ZnO/Ag was fabricated by using red and green mixed quantum dots as the light-emitting layer, and the electroluminescence spectrum of QLED device was studied. The experimental results show that the QLED device has significant color tunability. With the increase of applied voltage, the QLED device presents a color change from dark red to orange and then to dazzling yellow-green. The QLED device exhibits a turn-on voltage of 2.0 V and the maximum brightness can reach 6×104 cd/m2. What's more, the device achieves a maximum current efficiency of 21 cd/A and a maximum external quantum efficiency of 7.5% at 31 934 cd/m2. As an application demonstration, we further combine the color tunable QLED device with GaN-based blue LED to prepare a white light emission. The results show that the color temperature of white light emission can be tuned from 3 568 K(warm white) to 10 269 K(cold white) and color rendering index is not less than 70, exhibiting great prospects in the application of lighting. © 2022, Science Press. All right reserved.

Keyword:

Color Efficiency Gallium nitride III-V semiconductors Light Luminance Nanocrystals Organic light emitting diodes (OLED) Quantum efficiency Semiconductor quantum dots

Community:

  • [ 1 ] [Que, Si-Hua]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China
  • [ 2 ] [Wei, Li-Ming]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China
  • [ 3 ] [Zhou, Xiong-Tu]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China
  • [ 4 ] [Zhou, Xiong-Tu]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350116, China
  • [ 5 ] [Zhang, Yong-Ai]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China
  • [ 6 ] [Zhang, Yong-Ai]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350116, China
  • [ 7 ] [Wu, Chao-Xing]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China
  • [ 8 ] [Wu, Chao-Xing]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350116, China
  • [ 9 ] [Guo, Tai-Liang]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China
  • [ 10 ] [Guo, Tai-Liang]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350116, China
  • [ 11 ] [Yan, Qun]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China
  • [ 12 ] [Yan, Qun]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350116, China

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Source :

Chinese Journal of Luminescence

ISSN: 1000-7032

CN: 22-1116/O4

Year: 2022

Issue: 4

Volume: 43

Page: 591-597

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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