Indium　phosphide(InP)　quantum　dots(QDs)　have　drawn　much　attention　in　quantum　dots　light-emitting　diodes(QLED)　owing　to　their　heavy-metal-free　components　and　outstanding　optics　and　electricity　properties.　In　this　paper,　green　InP/ZnSe/ZnS　QDs　were　prepared　with　ZnSe　and　ZnS　as　the　shell　layers,　QDs　with　various　luminescence　properties　obtained　by　regulating　the　thickness　of　the　ZnSe　shell　layer.　When　the　mass　ratio　of　Se　powder　to　Zn(St)2　is　1:　15,　the　PL　peak　of　InP/ZnSe/ZnS　QDs　is　522　nm,　the　half-peak　width　is　45　nm　and　the　PLQY　is　as　high　as　86%.　QLED　based　on　different　thicknesses　of　ZnSe　shell　layers　was　prepared,　the　residual　organic　solvent　in　the　QDs　films　was　removed　by　vacuum　evaporation　to　avoid　the　destruction　of　QDs　performance　by　high　temperature　annealing,　and　the　best　EQE　of　2.2%　was　obtained　for　the　QLED　devices.　©　2022,　Science　Press.　All　right　reserved.