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学者姓名：李福山
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在我国统筹实施科教兴国战略、人才强国战略、创新驱动发展战略,以及一体推进教育发展、科技创新、人才培养政策的引领与驱动下,高校、企业与科研院所之间的协同育人机制已经从最初的倡议和试点阶段,逐渐迈向了落地实施和深入发展时期.科教融合与产教融合协同育人模式将得到进一步的深化,主要体现在培养主体的多元化、培养层次的提升、培养机制的优化以及培养方式的创新与升级等多个方面.以福州大学物理与信息工程学院为例,针对电子信息领域国家技术和人才战略需求,探索重点高校、头部企业和科研机构通过设立定制化专班、共建科研平台、面向头部企业定向就业、共同举办学术交流论坛、共建导师团队、共同评价培养质量等方式实施研究生培养,打造全要素融合研究生培养新范式,着力实现创新型高层次人才自主培养.
Keyword ：
产教融合 产教融合 校企联合专班 校企联合专班 研究生培养 研究生培养 科教融合 科教融合
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| GB/T 7714 | 杨晓丹 , 柯颖莹 , 郑志刚 et al. 全要素融合的研究生产学研协同培养机制构建研究 [J]. | 中国高校科技 , 2025 , (2) : 93-96 . |
| MLA | 杨晓丹 et al. "全要素融合的研究生产学研协同培养机制构建研究" . | 中国高校科技 2 (2025) : 93-96 . |
| APA | 杨晓丹 , 柯颖莹 , 郑志刚 , 魏金明 , 卢孝强 , 李福山 . 全要素融合的研究生产学研协同培养机制构建研究 . | 中国高校科技 , 2025 , (2) , 93-96 . |
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InP quantum dots have received intensive attention due to their tunable emission wavelengths, narrow bandwidths, and high color purity. Nevertheless, InP quantum dots exhibit notable instability in a complex environment due to their highly oxidizable properties. In this study, we present a strategy for synthesizing InP@Al2O3 nanocomposites that have InP quantum dots evenly embedded in a hybrid substrate containing Al2O3 and coupling-interconnection layers of Si and Al. In addition, we used high-power UV irradiation to repair the defects generated during the synthesis process, leading to photoluminescence (PL) intensity increase of more than 10 times. InP@Al2O3 nanocomposites have demonstrated up to 9 h of laser stability, 30 days of water stability and acid stability and 20 days of alkali stability. It has far exceeded that of InP quantum dots and commercially available phosphors. Distal-type light-emitting diodes (LEDs) with stable and standard white emission can be realized by combining red and green InP@Al2O3 nanocomposites with blue LED chips.
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| GB/T 7714 | Ding, Xiaobo , Hu, Hailong , Guo, Tailiang et al. Ultrastable InP@Al2O3 nanocomposites with UV curable function for application in white LEDs [J]. | JOURNAL OF MATERIALS CHEMISTRY C , 2024 , 13 (4) : 1883-1892 . |
| MLA | Ding, Xiaobo et al. "Ultrastable InP@Al2O3 nanocomposites with UV curable function for application in white LEDs" . | JOURNAL OF MATERIALS CHEMISTRY C 13 . 4 (2024) : 1883-1892 . |
| APA | Ding, Xiaobo , Hu, Hailong , Guo, Tailiang , Li, Fushan . Ultrastable InP@Al2O3 nanocomposites with UV curable function for application in white LEDs . | JOURNAL OF MATERIALS CHEMISTRY C , 2024 , 13 (4) , 1883-1892 . |
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With the development of near-eye displays, the demands for display resolution and performance are increasing. Quantum dot performance is virtually independent of pixel size, making it an efficient way to display ultrahigh resolution. However, the low efficiency of high-resolution quantum dot devices has been an urgent technical bottleneck to be solved. Here, we constructed a dense single-molecule modification layer and a leakage current blocking layer for high-resolution devices using self-assembly, thereby realizing ultrahigh-resolution, high-efficiency, and stable high-resolution quantum dot light-emitting diodes (QLEDs). The peak external quantum efficiencies of the red devices are 24.68% (8759 PPI) and 19.54% (26075 PPI), respectively, with an exceptional long lifetime (T 95@1000 nit) up to 4871 h. In addition, we explored the feasibility of this modification strategy on non-Cd-based quantum dots. In conclusion, our strategy effectively improves the performance of high-resolution devices and provides a superior approach for realizing near-eye display applications.
Keyword ：
Light-emittingdevice Light-emittingdevice Quantum dots Quantum dots Self-assembly Self-assembly Single-molecular modificationlayer Single-molecular modificationlayer Ultrahighresolution Ultrahighresolution
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| GB/T 7714 | Zhong, Chao , Alsharafi, Rashed , Hu, Hailong et al. High-Performance, High-Resolution Quantum Dot Light-Emitting Diodes with Self-Assembly Single-Molecular Interface Modification [J]. | NANO LETTERS , 2024 , 24 (44) : 14125-14132 . |
| MLA | Zhong, Chao et al. "High-Performance, High-Resolution Quantum Dot Light-Emitting Diodes with Self-Assembly Single-Molecular Interface Modification" . | NANO LETTERS 24 . 44 (2024) : 14125-14132 . |
| APA | Zhong, Chao , Alsharafi, Rashed , Hu, Hailong , Yu, Kuibao , Yang, Kaiyu , Guo, Tailiang et al. High-Performance, High-Resolution Quantum Dot Light-Emitting Diodes with Self-Assembly Single-Molecular Interface Modification . | NANO LETTERS , 2024 , 24 (44) , 14125-14132 . |
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胶体量子点材料因其优良的窄发射光谱、可调发射波长、高发光效率和优异的稳定性而被广泛研究，且同时具有溶液可加工性使得量子点发光二极管（Quantum dot light-emitting diode, QLED）具有广泛的适用性和应用。然而，器件自身存在的基底模式导致QLED器件大量光子被限制在内部无法利用。本文基于纳米压印工艺同时利用聚二甲基硅氧烷（Polydimethylsiloxane,PDMS）材料本身的表面结合能开发出溶剂自浸润式纳米压印工艺，对压力依赖度低的同时简化了工艺流程，制备出高质量周期性的1.3,1,0.5μm三种尺寸的微纳结构图案层，对红、绿、蓝三色QLED器件进行耦合实现光提取。在这种情况下，1.3μm微纳结构耦合绿光QLED器件亮度达到715 069 cd·m~(-2)，最大外量子效率（External quantum efficiency,EQE）和电流效率分别提升至12.5%和57.3 cd·A~(-1);1μm尺寸耦合的蓝光QLED器件各电学性能提升接近200%;0.5μm尺寸耦合红光QLED器件EQE也从17.3%提升至20.5%。并通过角分布测试，证明微纳结构不会对QLED器件发光强度造成影响，仍然接近朗伯体发射。本工作提出的溶剂自浸润式纳米压印工艺及QLED光提取方法，为QLED的性能提升提供了一条简单有效的途径。
Keyword ：
光学仿真 光学仿真 纳米压印 纳米压印 耦合光学性能 耦合光学性能 量子点发光二极管 量子点发光二极管
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| GB/T 7714 | 梁龙 , 郑悦婷 , 林立华 et al. 自浸润式纳米压印耦合实现量子点发光二极管性能提升 [J]. | 发光学报 , 2024 , 45 (04) : 613-620 . |
| MLA | 梁龙 et al. "自浸润式纳米压印耦合实现量子点发光二极管性能提升" . | 发光学报 45 . 04 (2024) : 613-620 . |
| APA | 梁龙 , 郑悦婷 , 林立华 , 胡海龙 , 李福山 . 自浸润式纳米压印耦合实现量子点发光二极管性能提升 . | 发光学报 , 2024 , 45 (04) , 613-620 . |
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Photosensitive quantum dot light-emitting diodes (PSQLEDs) possess the dual capabilities of generating and detecting light signals, which is of significant importance for the development of miniaturized and integrated optoelectronic devices. However, the state-of-the-art PSQLEDs can only detect light signals within a certain wavelength range, and require switching between the two functions under different bias voltage directions. In this work, The use of a ZnO/quantum dots (QDs)/ZnO multilayer (ZQZ ML) architecture as both the electron transport layer and the photosensitive layer is pioneered. The QDs in this structure are composed of narrow-bandgap lead sulfide QDs and wide-bandgap cadmium selenide QDs, successfully realizing a unique PSQLED device with C photosensitive characteristics. As a result, the as-fabricated device can respond to illumination from 365 to 1300 nm, and the device achieves a photoresponse rate of 20.9 mA W−1 in self-powered mode to UV light. After UV light irradiation, the maximum external quantum efficiency and maximum luminance of device reached 11.8% and 64,549 cd m−2, respectively. The device shows a record-high luminance ON/OFF ratio of 5500%, which is beneficial for high contrast and accurate information display. © 2024 Wiley-VCH GmbH.
Keyword ：
broad-spectrum detection broad-spectrum detection dual-functional dual-functional light-emitting device light-emitting device photosensitive photosensitive quantum dot quantum dot
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| GB/T 7714 | Pan, Y. , Hu, H. , Yang, K. et al. Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity [J]. | Advanced Optical Materials , 2024 , 12 (26) . |
| MLA | Pan, Y. et al. "Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity" . | Advanced Optical Materials 12 . 26 (2024) . |
| APA | Pan, Y. , Hu, H. , Yang, K. , Chen, W. , Lin, L. , Guo, T. et al. Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity . | Advanced Optical Materials , 2024 , 12 (26) . |
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Accurate prediction of Drug-Target Interactions (DTI) is crucial for drug development. Current state-of-the-art deep learning methods have significantly advanced the field; however, these methods exhibit limitations in predictive performance and the propensity for false negatives. Therefore, we propose EADTN, a simple and efficient ensemble model. We have designed an innovative feature adaptation technique to automatically extract local weights of drugs and targets, and we utilize clustering-enhanced parameter fine-tuning to overcome the issue of false negatives, thereby enhancing its reliability in drug discovery. Based on EADTN, we also propose a Shapley value-based method for identifying key drug substructures, effectively enhancing the model’s interpretability. Additionally, we utilized EADTN to reveal potential interactions between NQO1 targets and the drugs SIRT-IN-1 and LY2183240, which were subsequently validated through wet-lab experiments. Experimental evidence demonstrates that EADTN consistently outperforms existing best-performing models across various data sets, promising significant benefits in fields such as drug repositioning. © 2024 American Chemical Society.
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| GB/T 7714 | Wei, J. , Zhu, Y. , Zhuo, L. et al. Efficient Deep Model Ensemble Framework for Drug-Target Interaction Prediction [J]. | Journal of Physical Chemistry Letters , 2024 , 15 (30) : 7681-7693 . |
| MLA | Wei, J. et al. "Efficient Deep Model Ensemble Framework for Drug-Target Interaction Prediction" . | Journal of Physical Chemistry Letters 15 . 30 (2024) : 7681-7693 . |
| APA | Wei, J. , Zhu, Y. , Zhuo, L. , Liu, Y. , Fu, X. , Li, F. . Efficient Deep Model Ensemble Framework for Drug-Target Interaction Prediction . | Journal of Physical Chemistry Letters , 2024 , 15 (30) , 7681-7693 . |
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Balancing carrier injection via improving hole injection capability plays a key role in high-performance quantum dot light-emitting diodes (QLEDs). Herein, a self-assembled monolayer of carbazole-based derivatives is utilized to construct a dipole functional layer at the interface between the hole transport layer (HTL) and quantum dots (QDs) to facilitate hole injection. Additionally, rational interface engineering significantly reduces the trap-state density because of the highly ordered molecular arrangement. The resultant QLEDs present the promising maximum external quantum efficiency (EQE) of 25.03%, which is remarkably higher than that of the control ones (20.58%). The optimized device shows outstanding stability and a long operation lifetime (T95 lifetime at 1000 cd m-2, 14 695 h) in the air. This simple strategy presents how to increase hole injection by constructing a dipole interface and optimizing molecular arrangement to improve the performance of QLEDs.
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| GB/T 7714 | Yu, Kuibao , Hu, Hailong , Li, Yuanhang et al. Molecular dipole interfacial engineering for high-performance quantum-dot light-emitting diodes [J]. | JOURNAL OF MATERIALS CHEMISTRY C , 2024 , 13 (4) : 1668-1674 . |
| MLA | Yu, Kuibao et al. "Molecular dipole interfacial engineering for high-performance quantum-dot light-emitting diodes" . | JOURNAL OF MATERIALS CHEMISTRY C 13 . 4 (2024) : 1668-1674 . |
| APA | Yu, Kuibao , Hu, Hailong , Li, Yuanhang , Huang, Wenjuan , Qie, Yuan , Zhong, Chao et al. Molecular dipole interfacial engineering for high-performance quantum-dot light-emitting diodes . | JOURNAL OF MATERIALS CHEMISTRY C , 2024 , 13 (4) , 1668-1674 . |
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Cadmium selenide (CdSe)-based colloidal quantum dots (QDs) exhibit unique properties such as tunable colors, narrow emission, high photoluminescence efficiency, and high stability, making them one of the most promising candidates for next-generation displays. CdSe-based QD light-emitting diodes (QLEDs) have attracted more and more attention mainly due to their advantages including high electroluminescence brightness, low turn-on voltage, and ultrathin device structures. However, there are still many challenges, mainly including the lattice defects aroused by lattice strain during the QD growth process and the surface defects caused by ligand desorption. CdSe-based QLEDs with high photoelectronic performance were finally achieved in our work just by optimizing the synthesis processes and further reducing defects in QD shells. There was a great decrease in the defect density of the QD shell indirectly according to their testing results in the fluorescence lifetime and single-carrier devices. After the reaction system was diluted with a solvent in the hot-injection method, there was some blue shift in the QD emission observed from 595 to 562 nm. Then, with the ZnSe shell further coated onto the QD, the size of the effective emission center was reduced to some extent, and further, a blue shift in the emission was obtained with the wavelength down to 533 nm. Finally, on the outside of the as-synthesized QDs, the ZnS shell was used to passivate and further protect the ZnSe layer, which greatly increased the average fluorescence lifetime of the CdSe-based QDs from 22.94 to 36.41 ns. Additionally, a layer of lithium fluoride (LiF) with optimized thickness was further deposited onto the QD emitting layer to prevent ligand desorption from ethanol solvent cleaning. Therefore, the CdSe-based QD fluorescence efficiency was greatly improved and the maximum external quantum efficiency (EQE) of 8.06% for our CdSe-based QLEDs was achieved with a LiF layer of 3 nm.
Keyword ：
CdZnSe quantum dots (QDs) CdZnSe quantum dots (QDs) defect state control defect state control LiF film LiF film nucleation control nucleation control QLED QLED
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| GB/T 7714 | Huang, Qiaocan , Yang, Zunxian , Ye, Yuliang et al. Physically Controlled Nucleation for Tunable Quantum Dots and Interface Defect Modification in Light-Emitting Diodes [J]. | ACS APPLIED NANO MATERIALS , 2024 , 7 (2) : 1896-1906 . |
| MLA | Huang, Qiaocan et al. "Physically Controlled Nucleation for Tunable Quantum Dots and Interface Defect Modification in Light-Emitting Diodes" . | ACS APPLIED NANO MATERIALS 7 . 2 (2024) : 1896-1906 . |
| APA | Huang, Qiaocan , Yang, Zunxian , Ye, Yuliang , Meng, Zongyi , Zeng, Zhiwei , Hong, Hongyi et al. Physically Controlled Nucleation for Tunable Quantum Dots and Interface Defect Modification in Light-Emitting Diodes . | ACS APPLIED NANO MATERIALS , 2024 , 7 (2) , 1896-1906 . |
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Perovskite light-emitting diodes (PeLEDs) have attracted wide attention due to their excellent photoelectric properties. A variety of additives have been studied for perovskite emission layers to enhance the performance of PeLEDs. However, the buried interface, which also has significant influence on the crystallization kinetics and exciton recombination dynamics of the perovskite emission layer, remains to be explored. In this work, we introduced a new ionic liquid 1-Ethyl-3-methylimidazolium dicyanamide (EMIM DCA) with the characteristics of low viscosity and high conductivity into the interfacial layer between the hole transport layer (HTL) and the perovskite film. Due to the strong interaction between the EMIM DCA and perovskite, the crystallization of the perovskite film is obviously improved and the defects at the interface are well passivated. As a result, the nonradiative recombination in the interlayer is significantly reduced. In addition, the introduction of EMIM DCA promoted the injection of charge carriers, thus achieving a high luminance of 32310 cd m(-2) and enabling the maximum external quantum efficiency (EQE) of the PeLEDs increased from 10.2 % to 18.7 %.
Keyword ：
Buried interface Buried interface Ionic liquids Ionic liquids Light-emitting diodes Light-emitting diodes Perovskite Perovskite Q-2D Q-2D
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| GB/T 7714 | Yang, Kaiyu , Xu, Baolin , Lin, Qiuxiang et al. Interface engineering with ionic liquid for achieving efficient Quasi-2D perovskite light-emitting diodes [J]. | CHEMICAL ENGINEERING JOURNAL , 2024 , 483 . |
| MLA | Yang, Kaiyu et al. "Interface engineering with ionic liquid for achieving efficient Quasi-2D perovskite light-emitting diodes" . | CHEMICAL ENGINEERING JOURNAL 483 (2024) . |
| APA | Yang, Kaiyu , Xu, Baolin , Lin, Qiuxiang , Yu, Yongshen , Hu, Hailong , Li, Fushan . Interface engineering with ionic liquid for achieving efficient Quasi-2D perovskite light-emitting diodes . | CHEMICAL ENGINEERING JOURNAL , 2024 , 483 . |
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In recent years, optical limiting (OL) materials based on nonlinear optical effects have been widely used in military, optical engineering and scientific research fields. Pb-based perovskite quantum dots (QDs) materials are regarded as potential OL materials due to its excellent linear and nonlinear optical properties, resulting from the lone pair orbital 6s2 of Pb. However, the larger OL threshold and toxicity of Pb limit its wider applications. Herein, Cs3Sb2Br9 QDs were synthesized by supersaturated crystallization method, in which Sb has the same solitary pair orbit as Pb. The nonlinear optical absorption (NLA) and OL characteristics are studied by using the open-hole Z-scan technique under the irradiation of 532 nm laser. The NLA coefficient is recorded as beta = 62 cm GW-1, which is three orders of magnitude larger than CsPbBr3 nanocrystals (NCs), and the OL threshold is derived as Fth = 2 J cm-2, which is better than other OL materials reported in the literatures, rooting in free carrier absorption (FCA) under different laser energies. In general, these results indicate that Cs3Sb2Br9 QDs can be a potential superior candidate as OL material for practical expansive applications.
Keyword ：
Cs3Sb2Br9 QDs Cs3Sb2Br9 QDs Inorganic lead-free perovskite Inorganic lead-free perovskite Optical limiting Optical limiting Z-scan Z-scan
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| GB/T 7714 | Li, Wei , Huang, Yunfei , Li, Yunbo et al. Cs3Sb2Br9: A lead-free perovskite quantum dots as optical limiting material with favourable optical limiting threshold and nonlinear optical properties [J]. | OPTICAL MATERIALS , 2024 , 149 . |
| MLA | Li, Wei et al. "Cs3Sb2Br9: A lead-free perovskite quantum dots as optical limiting material with favourable optical limiting threshold and nonlinear optical properties" . | OPTICAL MATERIALS 149 (2024) . |
| APA | Li, Wei , Huang, Yunfei , Li, Yunbo , Zhang, Jian , Xu, Feng , Zheng, Chan et al. Cs3Sb2Br9: A lead-free perovskite quantum dots as optical limiting material with favourable optical limiting threshold and nonlinear optical properties . | OPTICAL MATERIALS , 2024 , 149 . |
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