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学者姓名：李福山
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Abstract ：
在我国统筹实施科教兴国战略、人才强国战略、创新驱动发展战略,以及一体推进教育发展、科技创新、人才培养政策的引领与驱动下,高校、企业与科研院所之间的协同育人机制已经从最初的倡议和试点阶段,逐渐迈向了落地实施和深入发展时期.科教融合与产教融合协同育人模式将得到进一步的深化,主要体现在培养主体的多元化、培养层次的提升、培养机制的优化以及培养方式的创新与升级等多个方面.以福州大学物理与信息工程学院为例,针对电子信息领域国家技术和人才战略需求,探索重点高校、头部企业和科研机构通过设立定制化专班、共建科研平台、面向头部企业定向就业、共同举办学术交流论坛、共建导师团队、共同评价培养质量等方式实施研究生培养,打造全要素融合研究生培养新范式,着力实现创新型高层次人才自主培养.
Keyword ：
产教融合 产教融合 校企联合专班 校企联合专班 研究生培养 研究生培养 科教融合 科教融合
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| GB/T 7714 | 杨晓丹 , 柯颖莹 , 郑志刚 et al. 全要素融合的研究生产学研协同培养机制构建研究 [J]. | 中国高校科技 , 2025 , (2) : 93-96 . |
| MLA | 杨晓丹 et al. "全要素融合的研究生产学研协同培养机制构建研究" . | 中国高校科技 2 (2025) : 93-96 . |
| APA | 杨晓丹 , 柯颖莹 , 郑志刚 , 魏金明 , 卢孝强 , 李福山 . 全要素融合的研究生产学研协同培养机制构建研究 . | 中国高校科技 , 2025 , (2) , 93-96 . |
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Anticounterfeiting technologies meet challenges in the Internet of Things era due to the rapidly growing volume of objects, their frequent connection with humans, and the accelerated advance of counterfeiting/cracking techniques. Here, we, inspired by biological fingerprints, present a simple anticounterfeiting system based on perovskite quantum dot (PQD) fingerprint physical unclonable function (FPUF) by cooperatively utilizing the spontaneous-phase separation of polymers and selective in situ synthesis PQDs as an entropy source. The FPUFs offer red, green, and blue full-color fingerprint identifiers and random three-dimensional (3D) morphology, which extends binary to multivalued encoding by tuning the perovskite and polymer components, enabling a high encoding capacity (about 108570000, far surpassing that of biometric fingerprints). The strategy is compatible with mainstream production techniques that are widely used in traditional low-cost printed anticounterfeiting labels including spray printing, stamping, writing, and laser printing, avoiding complicated fabrication. Macrographical patterns and micro/nanofingerprint patterns with multiscale-tailorable inter-ridge sizes can be fused into a single FPUF label, satisfying different levels of anticounterfeiting requirements. Furthermore, a smart fused scheme of enhanced deep learning and fingerprint characteristic comparison is leveraged, by which high-efficiency, high-accuracy authentication of our FPUFs is achieved even for the increasingly huge FPUF databases and imperfectly captured images from users.
Keyword ：
anticounterfeiting labels anticounterfeiting labels biomimeticfingerprint biomimeticfingerprint perovskite quantumdot perovskite quantumdot physical unclonablefunction physical unclonablefunction smart authentication system smart authentication system
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| GB/T 7714 | You, Kejia , Lin, Jiasong , Wang, Zhen et al. Biomimetic Fingerprint-like Unclonable Optical Anticounterfeiting System with Selectively In Situ-Synthesized Perovskite Quantum Dots Embedded in Spontaneous-Phase-Separated Polymers [J]. | ACS APPLIED MATERIALS & INTERFACES , 2025 , 17 (3) : 5254-5267 . |
| MLA | You, Kejia et al. "Biomimetic Fingerprint-like Unclonable Optical Anticounterfeiting System with Selectively In Situ-Synthesized Perovskite Quantum Dots Embedded in Spontaneous-Phase-Separated Polymers" . | ACS APPLIED MATERIALS & INTERFACES 17 . 3 (2025) : 5254-5267 . |
| APA | You, Kejia , Lin, Jiasong , Wang, Zhen , Jiang, Yi , Sun, Jiayu , Lin, Qinghong et al. Biomimetic Fingerprint-like Unclonable Optical Anticounterfeiting System with Selectively In Situ-Synthesized Perovskite Quantum Dots Embedded in Spontaneous-Phase-Separated Polymers . | ACS APPLIED MATERIALS & INTERFACES , 2025 , 17 (3) , 5254-5267 . |
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Quantum dot (QD) based light-emitting diode devices (QLEDs) attracted significant academic interest due to their outstanding color saturation and convenient solution-based manufacturing processes. Currently, the external quantum efficiency (EQE) of red, green, and blue QLEDs reached their own theoretical limits. However, there was still a common phenomenon of roll-off existed in QLEDs. In this work, QLEDs with an ultra low roll-off were realized via simple carrier injection regulation strategy in achieving carrier recombination balance and exhibited excellent repeatability. By modifying quantum dots and electron transport layer (ETL), the champion device with the peak EQE of 15.2 %, and a current efficiency (CE) of 63.4 cd/A was successfully fabricated, which were 1.9 and 2.0 times greater than those of the control devices, respectively. The devices delivered a peak brightness of 266,778 cd/m2, and the EQE remained at 15.0 % at a brightness of 50,000 cd/m2, staying above 14 % within the range of 3000 to 200,000 cd/m2. At a voltage of 10 V, the peak EQE of the optimized devices decreased by only 7.6 % when compared with their optimum value of EQEs, while the EQE of the control device declined by 26.6 %. Finally, analysis of 40 different batches of devices revealed an average EQE of 14.3 %, demonstrating that this strategy exhibited good repeatability. This approach provided a convenient means to regulate carrier injection and further elucidated the relationship between roll-off and carrier injection balance in QLEDs, proposing a strategy to enhance their performance and simultaneously mitigate roll-off.
Keyword ：
Low roll-off Low roll-off QLEDs QLEDs Quantum dots (QDs) Quantum dots (QDs) Repeatability Repeatability
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| GB/T 7714 | Chen, Ye , Yang, Zunxian , Wang, Jiaxiang et al. Dual optimization strategies to achieve low roll-off and stable quantum dot light-emitting diodes [J]. | OPTICAL MATERIALS , 2025 , 160 . |
| MLA | Chen, Ye et al. "Dual optimization strategies to achieve low roll-off and stable quantum dot light-emitting diodes" . | OPTICAL MATERIALS 160 (2025) . |
| APA | Chen, Ye , Yang, Zunxian , Wang, Jiaxiang , Zhang, Hui , Chen, Yue , Jiang, Xudong et al. Dual optimization strategies to achieve low roll-off and stable quantum dot light-emitting diodes . | OPTICAL MATERIALS , 2025 , 160 . |
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Colloidal quantum dot (CQD) near-infrared (NIR) upconversion devices (UCDs) can directly convert low-energy NIR light into higher energy visible light without the need for additional integrated circuits, which is advantageous for NIR sensing and imaging. However, the state-of-the-art CQD NIR upconverters still face challenges, including high turn-on voltage (V on), low photon-to-photon (p-p) upconversion efficiency, and low current on/off ratio, primarily due to inherent limitations in the device structure and operating mechanisms. In this work, we developed a CQD NIR UCD based on a hole-only injection mechanism. Our device effectively suppresses electron injection from the cathode without hindering hole injection from the anode. As a result, the dark current of the device is reduced to a low level, which is favorable for the balance of photogenerated carriers and injected charges. Furthermore, we employed a liquid-phase ligand-exchange process to treat the PbS CQD photosensitive layer (PSL), which enhances the uniformity and charge transport capability of PSL, further optimizing the utilization of photogenerated carriers. We achieved a record high current on/off ratio exceeding 3.5 x 105 for the CQD NIR UCD. Additionally, the device exhibits a high p-p upconversion efficiency of 12.8% and a low V on of 1.8 V.
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| GB/T 7714 | Pan, Youjiang , Wu, Chunyan , Hu, Hailong et al. High-Performance Quantum Dot Near-Infrared Upconversion Devices Based on the Hole-Only Injection Mechanidsm [J]. | JOURNAL OF PHYSICAL CHEMISTRY LETTERS , 2025 , 16 (2) : 618-626 . |
| MLA | Pan, Youjiang et al. "High-Performance Quantum Dot Near-Infrared Upconversion Devices Based on the Hole-Only Injection Mechanidsm" . | JOURNAL OF PHYSICAL CHEMISTRY LETTERS 16 . 2 (2025) : 618-626 . |
| APA | Pan, Youjiang , Wu, Chunyan , Hu, Hailong , Guo, Tailiang , Yang, Guojian , Qian, Lei et al. High-Performance Quantum Dot Near-Infrared Upconversion Devices Based on the Hole-Only Injection Mechanidsm . | JOURNAL OF PHYSICAL CHEMISTRY LETTERS , 2025 , 16 (2) , 618-626 . |
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Electrohydrodynamic (EHD) printing is a promising method for manufacturing high-resolution quantum dot light-emitting diodes (QLEDs). The stability of the EHD printing process and the morphology of final quantum dot (QD) film are highly dependent on the ink formulation. To solve this problem, we selected a ternary solvent (decahydronaphthalene, tetradecane and nonane) ink for cadmium-based QDs (CdSe/ZnS) to achieve excellent QD dispersion while eliminating the "coffee ring" effect, resulting in high quality QD films. We also fabricated a complete QLED device by printing a light-emitting layer formed by linearly aligned strips of QDs, achieving an external quantum efficiency (EQE) of 19.2 %, which is one of the highest levels of printing devices. On this basis, we introduced patterned PMMA structures prepared by nanoimprinting method to achieve ultrahigh resolu-tion devices. The pixel density achieved was 8,758 pixels per inch (PPI), with a maximum EQE of 10.5 %. The luminance is 9530.43 cd/m2 at a voltage of 4 volts. This work shows promising potential in realizing ultra-high resolution and high-performance QLEDs.
Keyword ：
Electrohydrodynamic printing Electrohydrodynamic printing light-emitting diodes light-emitting diodes quantum dot quantum dot ultra-high resolution ultra-high resolution
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| GB/T 7714 | Zeng, Qunying , Fan, Yijie , Zhu, Yangbin et al. Electrohydrodynamic Printing Enables Ultrahigh Resolution Quantum Dot Light-Emitting Diodes [J]. | IEEE ELECTRON DEVICE LETTERS , 2025 , 46 (1) : 64-67 . |
| MLA | Zeng, Qunying et al. "Electrohydrodynamic Printing Enables Ultrahigh Resolution Quantum Dot Light-Emitting Diodes" . | IEEE ELECTRON DEVICE LETTERS 46 . 1 (2025) : 64-67 . |
| APA | Zeng, Qunying , Fan, Yijie , Zhu, Yangbin , Guo, Tailiang , Hu, Hailong , Li, Fushan . Electrohydrodynamic Printing Enables Ultrahigh Resolution Quantum Dot Light-Emitting Diodes . | IEEE ELECTRON DEVICE LETTERS , 2025 , 46 (1) , 64-67 . |
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Perovskite quantum dots (PQDs) have emerged as promising candidates for next-generation high-quality lighting and high-definition displays due to their outstanding luminescence properties, characterized by a narrow emission spectrum and tunable color. However, during the purification process involving polar solvents, ligand detachment from the quantum dot surface often induces crystal defects, thereby compromising their long-term stability. Herein, the effects of various post-processing strategies on PQD performance are systematically explored, including the use of oleic acid (OA), didodecyldimethylammonium bromide (DDAB), and their combinations, alongside OA-assisted synthesis. Furthermore, a synergistic post-processing strategy based on DDAB-NaMeS (sodium methanesulfonate) is proposed to elucidate the mechanism of ligand reconstruction on the quantum dot surface during purification. The resulting PQDs demonstrated excellent stability over a storage period exceeding one month, and the corresponding Quantum Dots Light-Emitting Diodes (QLEDs) achieved a peak external quantum efficiency (EQE) of 9.82%, representing a 1.91-fold improvement over standard devices. These QLEDs exhibited exceptional optoelectronic performance, underscoring their potential for application in other sulfonic acid ligands and perovskite-based materials.
Keyword ：
ligand exchange ligand exchange light-emitting diodes light-emitting diodes perovskite quantum dots perovskite quantum dots post-treatment post-treatment surface reconstruction surface reconstruction
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| GB/T 7714 | Wang, Jiaxiang , Yang, Zunxian , Chen, Ye et al. Sulfonic Acid Ligands Promote Surface Reconstruction of Perovskite Quantum Dots for High-Performance Light-Emitting Diodes [J]. | ADVANCED OPTICAL MATERIALS , 2025 , 13 (8) . |
| MLA | Wang, Jiaxiang et al. "Sulfonic Acid Ligands Promote Surface Reconstruction of Perovskite Quantum Dots for High-Performance Light-Emitting Diodes" . | ADVANCED OPTICAL MATERIALS 13 . 8 (2025) . |
| APA | Wang, Jiaxiang , Yang, Zunxian , Chen, Ye , Zhang, Hui , Chen, Yue , Bai, Yuting et al. Sulfonic Acid Ligands Promote Surface Reconstruction of Perovskite Quantum Dots for High-Performance Light-Emitting Diodes . | ADVANCED OPTICAL MATERIALS , 2025 , 13 (8) . |
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Perovskite quantum dots (PQDs) have attracted more and more attention in light-emitting diode (LED) devices due to their outstanding photoelectric properties. Surface ligands not only enable size control of quantum dots but also enhance their optoelectronic performance. However, the efficiency of exciton recombination in PQDs is often hindered by the desorption dynamics of surface ligands, leading to suboptimal electrical performance. In this study, sodium methanesulfonate (NaMeS) was successfully introduced during PQD synthesis and ligand exchange, where the S=O groups effectively interacted with the perovskite components. The NaMeS-modified PQD films exhibited significantly improved surface morphology, radiative recombination efficiency, and carrier mobility. Consequently, Pe-LEDs derived from NaMeS-capped PQDs achieved a remarkable enhancement in performance with a maximum external quantum efficiency of 9.41%. This work thus provides a novel and effective strategy for the development of high-performance PQDs and their applications in LEDs.
Keyword ：
ligand exchange ligand exchange perovskite quantumdots perovskite quantumdots radiativerecombination radiativerecombination sodium methanesulfonate sodium methanesulfonate surface passivation surface passivation
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| GB/T 7714 | Ye, Yuliang , Wang, Jiaxiang , Yang, Zunxian et al. Uncovering the Performance Enhancing Mechanism of Methanesulfonate Ligands in Perovskite Quantum Dots for Light-Emitting Devices [J]. | ACS APPLIED MATERIALS & INTERFACES , 2025 , 17 (4) : 6639-6647 . |
| MLA | Ye, Yuliang et al. "Uncovering the Performance Enhancing Mechanism of Methanesulfonate Ligands in Perovskite Quantum Dots for Light-Emitting Devices" . | ACS APPLIED MATERIALS & INTERFACES 17 . 4 (2025) : 6639-6647 . |
| APA | Ye, Yuliang , Wang, Jiaxiang , Yang, Zunxian , Chen, Ye , Zhang, Hui , Bai, Yuting et al. Uncovering the Performance Enhancing Mechanism of Methanesulfonate Ligands in Perovskite Quantum Dots for Light-Emitting Devices . | ACS APPLIED MATERIALS & INTERFACES , 2025 , 17 (4) , 6639-6647 . |
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In the era of burgeoning information technology, ensuring the impregnable transmission of confidential information has emerged as a paramount global imperative. Traditional fluorescent encryption materials are limited in advanced encryption due to their visible properties under ultraviolet light, while improved stimulus-responsive encryption strategies are usually based on static information. Herein, we exploit a novel high-security encryption strategy using metal halides and perovskite quantum dots as invisible inks and developer, respectively. The decryption of the information is impervious to traditional decryption means, necessitating the possession of the appropriate quadruple key to accomplish the decryption process. This approach leverages the anion exchange mechanism between metal halides and perovskite quantum dots, thereby enabling a multilevel encryption system. Consequently, the strategy establishes a multitiered and multifaceted security framework, which has significant application potential in the protection of confidential information requiring a superior level of security and provides a novel encryption and decryption scheme in the field of information security.
Keyword ：
Anion exchange Anion exchange Dynamic encryption Dynamic encryption Informationsecurity Informationsecurity Multilevel encryption Multilevel encryption Perovskite quantum dot Perovskite quantum dot
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| GB/T 7714 | Lei, Longjie , Yang, Kaiyu , Liu, Yang et al. Anion Exchange-Induced Invisible Perovskite Encryption System with Time-Dependence for Confidential Information Security [J]. | ACS PHOTONICS , 2025 . |
| MLA | Lei, Longjie et al. "Anion Exchange-Induced Invisible Perovskite Encryption System with Time-Dependence for Confidential Information Security" . | ACS PHOTONICS (2025) . |
| APA | Lei, Longjie , Yang, Kaiyu , Liu, Yang , Zhang, Qingkai , Yu, Kuibao , Li, Fushan . Anion Exchange-Induced Invisible Perovskite Encryption System with Time-Dependence for Confidential Information Security . | ACS PHOTONICS , 2025 . |
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The rapid development of near-eye display has put forward higher requirements for the resolution and image quality, while the performance of quantum dots (QDs) is virtually unlimited by pixel size, making them an ideal material for the next generation high-resolution display devices. However, there are still significant challenges in depositing multi-color pixels within the micron range and achieving high performance for the full-color quantum dot light emitting diodes (QLEDs). Herein, a combination of directional transfer printing and Langmuir-Blodgett (LB) technique was utilized to precisely transfer multi-color QDs arrays in the predetermined direction, and the full-color QDs arrays demonstrated fantastic morphology and uniform arrangement. As a result, the full-color QLEDs showed excellent performance with a resolution of 6350 pixels per inch (PPI), a luminance up to 62,947 cd/m2 and a peak external quantum efficiency (EQE) of 10.03 %. In addition, pixel spacing layers were introduced to further suppress electrical crosstalk and unwanted light emission, and the redundant part of emissive layers enabled QDs to be embedded into pixel spacing layers readily. The resulting full-color QLEDs with independent pixels exhibited a same high resolution of 6350 PPI, with a luminance of 35,427 cd/m2 and a peak EQE of 8.55 %. Our work represents the best performance of full-color QLEDs with both high efficiency and high resolution, which demonstrates great potential in the application of future near-eye displays.
Keyword ：
Full-color Full-color High-resolution High-resolution Light emitting diodes Light emitting diodes Quantum dots Quantum dots Transfer printing Transfer printing
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| GB/T 7714 | Yang, Kaiyu , Zheng, Hongxi , Zhong, Chao et al. High-resolution and high-performance full-color electroluminescent quantum dot light-emitting diodes [J]. | NANO ENERGY , 2025 , 138 . |
| MLA | Yang, Kaiyu et al. "High-resolution and high-performance full-color electroluminescent quantum dot light-emitting diodes" . | NANO ENERGY 138 (2025) . |
| APA | Yang, Kaiyu , Zheng, Hongxi , Zhong, Chao , Huang, Xingyun , Zhang, Qingkai , Yu, Kuibao et al. High-resolution and high-performance full-color electroluminescent quantum dot light-emitting diodes . | NANO ENERGY , 2025 , 138 . |
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Photosensitive quantum dot light-emitting diodes (PSQLEDs) possess the dual capabilities of generating and detecting light signals, which is of significant importance for the development of miniaturized and integrated optoelectronic devices. However, the state-of-the-art PSQLEDs can only detect light signals within a certain wavelength range, and require switching between the two functions under different bias voltage directions. In this work, The use of a ZnO/quantum dots (QDs)/ZnO multilayer (ZQZ ML) architecture as both the electron transport layer and the photosensitive layer is pioneered. The QDs in this structure are composed of narrow-bandgap lead sulfide QDs and wide-bandgap cadmium selenide QDs, successfully realizing a unique PSQLED device with C photosensitive characteristics. As a result, the as-fabricated device can respond to illumination from 365 to 1300 nm, and the device achieves a photoresponse rate of 20.9 mA W−1 in self-powered mode to UV light. After UV light irradiation, the maximum external quantum efficiency and maximum luminance of device reached 11.8% and 64,549 cd m−2, respectively. The device shows a record-high luminance ON/OFF ratio of 5500%, which is beneficial for high contrast and accurate information display. © 2024 Wiley-VCH GmbH.
Keyword ：
broad-spectrum detection broad-spectrum detection dual-functional dual-functional light-emitting device light-emitting device photosensitive photosensitive quantum dot quantum dot
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| GB/T 7714 | Pan, Y. , Hu, H. , Yang, K. et al. Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity [J]. | Advanced Optical Materials , 2024 , 12 (26) . |
| MLA | Pan, Y. et al. "Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity" . | Advanced Optical Materials 12 . 26 (2024) . |
| APA | Pan, Y. , Hu, H. , Yang, K. , Chen, W. , Lin, L. , Guo, T. et al. Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity . | Advanced Optical Materials , 2024 , 12 (26) . |
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