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学者姓名：胡海龙
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文本到图像生成是一项极具挑战性的跨模态任务,目标是根据给定文本描述生成对应的图像.尽管现阶段相关研究在视觉呈现方面效果优异,但仍存在细节表达不够精细、语义一致性欠佳等问题.基于此,文章提出了一种基于语义增强的生成对抗模型,将文本进行编码后送入条件增强模块进行处理,丰富文本语义特征.在生成网络中,添加一个自适应块,在仿射变换前将上一层的输出和文本语义信息输入自适应块进行进一步的信息增强.并通过引入对比损失,提高文本与生成图像之间的语义一致性.将这一方法在MSCOCO和CUB birds 200 两个数据集上进行训练测试,实验结果表明,与其他模型相比,性能得到了较高提升.
Keyword ：
对比损失 对比损失 文本生成图像 文本生成图像 生成对抗网络 生成对抗网络 语义增强 语义增强
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| GB/T 7714 | 兰才俊 , 姚剑敏 , 胡海龙 et al. 基于语义增强的单阶段文本生成图像方法 [J]. | 信息技术与信息化 , 2025 , (1) : 5-9 . |
| MLA | 兰才俊 et al. "基于语义增强的单阶段文本生成图像方法" . | 信息技术与信息化 1 (2025) : 5-9 . |
| APA | 兰才俊 , 姚剑敏 , 胡海龙 , 陈恩果 , 严群 . 基于语义增强的单阶段文本生成图像方法 . | 信息技术与信息化 , 2025 , (1) , 5-9 . |
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InP quantum dots have received intensive attention due to their tunable emission wavelengths, narrow bandwidths, and high color purity. Nevertheless, InP quantum dots exhibit notable instability in a complex environment due to their highly oxidizable properties. In this study, we present a strategy for synthesizing InP@Al2O3 nanocomposites that have InP quantum dots evenly embedded in a hybrid substrate containing Al2O3 and coupling-interconnection layers of Si and Al. In addition, we used high-power UV irradiation to repair the defects generated during the synthesis process, leading to photoluminescence (PL) intensity increase of more than 10 times. InP@Al2O3 nanocomposites have demonstrated up to 9 h of laser stability, 30 days of water stability and acid stability and 20 days of alkali stability. It has far exceeded that of InP quantum dots and commercially available phosphors. Distal-type light-emitting diodes (LEDs) with stable and standard white emission can be realized by combining red and green InP@Al2O3 nanocomposites with blue LED chips.
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| GB/T 7714 | Ding, Xiaobo , Hu, Hailong , Guo, Tailiang et al. Ultrastable InP@Al2O3 nanocomposites with UV curable function for application in white LEDs [J]. | JOURNAL OF MATERIALS CHEMISTRY C , 2024 , 13 (4) : 1883-1892 . |
| MLA | Ding, Xiaobo et al. "Ultrastable InP@Al2O3 nanocomposites with UV curable function for application in white LEDs" . | JOURNAL OF MATERIALS CHEMISTRY C 13 . 4 (2024) : 1883-1892 . |
| APA | Ding, Xiaobo , Hu, Hailong , Guo, Tailiang , Li, Fushan . Ultrastable InP@Al2O3 nanocomposites with UV curable function for application in white LEDs . | JOURNAL OF MATERIALS CHEMISTRY C , 2024 , 13 (4) , 1883-1892 . |
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With the development of near-eye displays, the demands for display resolution and performance are increasing. Quantum dot performance is virtually independent of pixel size, making it an efficient way to display ultrahigh resolution. However, the low efficiency of high-resolution quantum dot devices has been an urgent technical bottleneck to be solved. Here, we constructed a dense single-molecule modification layer and a leakage current blocking layer for high-resolution devices using self-assembly, thereby realizing ultrahigh-resolution, high-efficiency, and stable high-resolution quantum dot light-emitting diodes (QLEDs). The peak external quantum efficiencies of the red devices are 24.68% (8759 PPI) and 19.54% (26075 PPI), respectively, with an exceptional long lifetime (T 95@1000 nit) up to 4871 h. In addition, we explored the feasibility of this modification strategy on non-Cd-based quantum dots. In conclusion, our strategy effectively improves the performance of high-resolution devices and provides a superior approach for realizing near-eye display applications.
Keyword ：
Light-emittingdevice Light-emittingdevice Quantum dots Quantum dots Self-assembly Self-assembly Single-molecular modificationlayer Single-molecular modificationlayer Ultrahighresolution Ultrahighresolution
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| GB/T 7714 | Zhong, Chao , Alsharafi, Rashed , Hu, Hailong et al. High-Performance, High-Resolution Quantum Dot Light-Emitting Diodes with Self-Assembly Single-Molecular Interface Modification [J]. | NANO LETTERS , 2024 , 24 (44) : 14125-14132 . |
| MLA | Zhong, Chao et al. "High-Performance, High-Resolution Quantum Dot Light-Emitting Diodes with Self-Assembly Single-Molecular Interface Modification" . | NANO LETTERS 24 . 44 (2024) : 14125-14132 . |
| APA | Zhong, Chao , Alsharafi, Rashed , Hu, Hailong , Yu, Kuibao , Yang, Kaiyu , Guo, Tailiang et al. High-Performance, High-Resolution Quantum Dot Light-Emitting Diodes with Self-Assembly Single-Molecular Interface Modification . | NANO LETTERS , 2024 , 24 (44) , 14125-14132 . |
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胶体量子点材料因其优良的窄发射光谱、可调发射波长、高发光效率和优异的稳定性而被广泛研究，且同时具有溶液可加工性使得量子点发光二极管（Quantum dot light-emitting diode, QLED）具有广泛的适用性和应用。然而，器件自身存在的基底模式导致QLED器件大量光子被限制在内部无法利用。本文基于纳米压印工艺同时利用聚二甲基硅氧烷（Polydimethylsiloxane,PDMS）材料本身的表面结合能开发出溶剂自浸润式纳米压印工艺，对压力依赖度低的同时简化了工艺流程，制备出高质量周期性的1.3,1,0.5μm三种尺寸的微纳结构图案层，对红、绿、蓝三色QLED器件进行耦合实现光提取。在这种情况下，1.3μm微纳结构耦合绿光QLED器件亮度达到715 069 cd·m~(-2)，最大外量子效率（External quantum efficiency,EQE）和电流效率分别提升至12.5%和57.3 cd·A~(-1);1μm尺寸耦合的蓝光QLED器件各电学性能提升接近200%;0.5μm尺寸耦合红光QLED器件EQE也从17.3%提升至20.5%。并通过角分布测试，证明微纳结构不会对QLED器件发光强度造成影响，仍然接近朗伯体发射。本工作提出的溶剂自浸润式纳米压印工艺及QLED光提取方法，为QLED的性能提升提供了一条简单有效的途径。
Keyword ：
光学仿真 光学仿真 纳米压印 纳米压印 耦合光学性能 耦合光学性能 量子点发光二极管 量子点发光二极管
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| GB/T 7714 | 梁龙 , 郑悦婷 , 林立华 et al. 自浸润式纳米压印耦合实现量子点发光二极管性能提升 [J]. | 发光学报 , 2024 , 45 (04) : 613-620 . |
| MLA | 梁龙 et al. "自浸润式纳米压印耦合实现量子点发光二极管性能提升" . | 发光学报 45 . 04 (2024) : 613-620 . |
| APA | 梁龙 , 郑悦婷 , 林立华 , 胡海龙 , 李福山 . 自浸润式纳米压印耦合实现量子点发光二极管性能提升 . | 发光学报 , 2024 , 45 (04) , 613-620 . |
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Photosensitive quantum dot light-emitting diodes (PSQLEDs) possess the dual capabilities of generating and detecting light signals, which is of significant importance for the development of miniaturized and integrated optoelectronic devices. However, the state-of-the-art PSQLEDs can only detect light signals within a certain wavelength range, and require switching between the two functions under different bias voltage directions. In this work, The use of a ZnO/quantum dots (QDs)/ZnO multilayer (ZQZ ML) architecture as both the electron transport layer and the photosensitive layer is pioneered. The QDs in this structure are composed of narrow-bandgap lead sulfide QDs and wide-bandgap cadmium selenide QDs, successfully realizing a unique PSQLED device with C photosensitive characteristics. As a result, the as-fabricated device can respond to illumination from 365 to 1300 nm, and the device achieves a photoresponse rate of 20.9 mA W−1 in self-powered mode to UV light. After UV light irradiation, the maximum external quantum efficiency and maximum luminance of device reached 11.8% and 64,549 cd m−2, respectively. The device shows a record-high luminance ON/OFF ratio of 5500%, which is beneficial for high contrast and accurate information display. © 2024 Wiley-VCH GmbH.
Keyword ：
broad-spectrum detection broad-spectrum detection dual-functional dual-functional light-emitting device light-emitting device photosensitive photosensitive quantum dot quantum dot
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| GB/T 7714 | Pan, Y. , Hu, H. , Yang, K. et al. Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity [J]. | Advanced Optical Materials , 2024 , 12 (26) . |
| MLA | Pan, Y. et al. "Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity" . | Advanced Optical Materials 12 . 26 (2024) . |
| APA | Pan, Y. , Hu, H. , Yang, K. , Chen, W. , Lin, L. , Guo, T. et al. Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity . | Advanced Optical Materials , 2024 , 12 (26) . |
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Balancing carrier injection via improving hole injection capability plays a key role in high-performance quantum dot light-emitting diodes (QLEDs). Herein, a self-assembled monolayer of carbazole-based derivatives is utilized to construct a dipole functional layer at the interface between the hole transport layer (HTL) and quantum dots (QDs) to facilitate hole injection. Additionally, rational interface engineering significantly reduces the trap-state density because of the highly ordered molecular arrangement. The resultant QLEDs present the promising maximum external quantum efficiency (EQE) of 25.03%, which is remarkably higher than that of the control ones (20.58%). The optimized device shows outstanding stability and a long operation lifetime (T95 lifetime at 1000 cd m-2, 14 695 h) in the air. This simple strategy presents how to increase hole injection by constructing a dipole interface and optimizing molecular arrangement to improve the performance of QLEDs.
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| GB/T 7714 | Yu, Kuibao , Hu, Hailong , Li, Yuanhang et al. Molecular dipole interfacial engineering for high-performance quantum-dot light-emitting diodes [J]. | JOURNAL OF MATERIALS CHEMISTRY C , 2024 , 13 (4) : 1668-1674 . |
| MLA | Yu, Kuibao et al. "Molecular dipole interfacial engineering for high-performance quantum-dot light-emitting diodes" . | JOURNAL OF MATERIALS CHEMISTRY C 13 . 4 (2024) : 1668-1674 . |
| APA | Yu, Kuibao , Hu, Hailong , Li, Yuanhang , Huang, Wenjuan , Qie, Yuan , Zhong, Chao et al. Molecular dipole interfacial engineering for high-performance quantum-dot light-emitting diodes . | JOURNAL OF MATERIALS CHEMISTRY C , 2024 , 13 (4) , 1668-1674 . |
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Graph convolution networks (GCN) have demonstrated success in learning graph structures; however, they are limited in inductive tasks. Graph attention networks (GAT) were proposed to address the limitations of GCN and have shown high performance in graph -based tasks. Despite this success, GAT faces challenges in hardware acceleration, including: 1) The GAT algorithm has difficulty adapting to hardware; 2) challenges in efficiently implementing Sparse matrix multiplication (SPMM); and 3) complex addressing and pipeline stall issues due to irregular memory accesses. To this end, this paper proposed SH-GAT, an FPGA-based GAT accelerator that achieves more efficient GAT inference. The proposed approach employed several optimizations to enhance GAT performance. First, this work optimized the GAT algorithm using split weights and softmax approximation to make it more hardware -friendly. Second, a load -balanced SPMM kernel was designed to fully leverage potential parallelism and improve data throughput. Lastly, data preprocessing was performed by pre -fetching the source node and its neighbor nodes, effectively addressing pipeline stall and complexly addressing issues arising from irregular memory access. SH-GAT was evaluated on the Xilinx FPGA Alveo U280 accelerator card with three popular datasets. Compared to existing CPU, GPU, and state-of-the-art (SOTA) FPGA-based accelerators, SH-GAT can achieve speedup by up to 3283x, 13x, and 2.3x.
Keyword ：
accelerator accelerator co-design co-design FPGA FPGA graph graph graph attention networks graph attention networks
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| GB/T 7714 | Wang, Renping , Li, Shun , Tang, Enhao et al. SH-GAT: Software-hardware co-design for accelerating graph attention networks on FPGA [J]. | ELECTRONIC RESEARCH ARCHIVE , 2024 , 32 (4) : 2310-2322 . |
| MLA | Wang, Renping et al. "SH-GAT: Software-hardware co-design for accelerating graph attention networks on FPGA" . | ELECTRONIC RESEARCH ARCHIVE 32 . 4 (2024) : 2310-2322 . |
| APA | Wang, Renping , Li, Shun , Tang, Enhao , Lan, Sen , Liu, Yajing , Yang, Jing et al. SH-GAT: Software-hardware co-design for accelerating graph attention networks on FPGA . | ELECTRONIC RESEARCH ARCHIVE , 2024 , 32 (4) , 2310-2322 . |
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Perovskite light-emitting diodes (PeLEDs) have attracted wide attention due to their excellent photoelectric properties. A variety of additives have been studied for perovskite emission layers to enhance the performance of PeLEDs. However, the buried interface, which also has significant influence on the crystallization kinetics and exciton recombination dynamics of the perovskite emission layer, remains to be explored. In this work, we introduced a new ionic liquid 1-Ethyl-3-methylimidazolium dicyanamide (EMIM DCA) with the characteristics of low viscosity and high conductivity into the interfacial layer between the hole transport layer (HTL) and the perovskite film. Due to the strong interaction between the EMIM DCA and perovskite, the crystallization of the perovskite film is obviously improved and the defects at the interface are well passivated. As a result, the nonradiative recombination in the interlayer is significantly reduced. In addition, the introduction of EMIM DCA promoted the injection of charge carriers, thus achieving a high luminance of 32310 cd m(-2) and enabling the maximum external quantum efficiency (EQE) of the PeLEDs increased from 10.2 % to 18.7 %.
Keyword ：
Buried interface Buried interface Ionic liquids Ionic liquids Light-emitting diodes Light-emitting diodes Perovskite Perovskite Q-2D Q-2D
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| GB/T 7714 | Yang, Kaiyu , Xu, Baolin , Lin, Qiuxiang et al. Interface engineering with ionic liquid for achieving efficient Quasi-2D perovskite light-emitting diodes [J]. | CHEMICAL ENGINEERING JOURNAL , 2024 , 483 . |
| MLA | Yang, Kaiyu et al. "Interface engineering with ionic liquid for achieving efficient Quasi-2D perovskite light-emitting diodes" . | CHEMICAL ENGINEERING JOURNAL 483 (2024) . |
| APA | Yang, Kaiyu , Xu, Baolin , Lin, Qiuxiang , Yu, Yongshen , Hu, Hailong , Li, Fushan . Interface engineering with ionic liquid for achieving efficient Quasi-2D perovskite light-emitting diodes . | CHEMICAL ENGINEERING JOURNAL , 2024 , 483 . |
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Zinc oxidenanoparticles (ZnO NPs) is widely used as electron transport layer material in quantum dot light-emitting diodes (QLED) due to its high carrier mobility, unique photoelectric properties and good stability. However, because ZnO has higher electron mobility than organic hole transport materials, the carrier transport is unbalanced. In addition, ZnO NPs has many surface defects, which is easy to capture electrons or holes, increasing the probability of non-radiative recombination. To solve these problems, we carefully selected an organic compound diallylamine (DAA) doping method to modify the surface of ZnO. DAA is found to not only reduce the quenching at the interface between ZnO and QD, but also regulate the energy level position to promote the carrier injection balance of QLED devices. Compared with control ZnO QLED, the external quantum efficiency (EQE) of the red QLED with DAA-modified ZnO NPs is significantly improved, the peakEQE of the devices increased by 21% from 18.8% to 23.6%. respectively. It is a simple and economical solution for manufacturing high-performance QLED.
Keyword ：
diallylamine diallylamine Quantum dot light-emitting diodes Quantum dot light-emitting diodes ZnO ZnO
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| GB/T 7714 | Chen, Haomin , Zeng, Qunying , Zhu, Yangbin et al. Efficient Quantum Dot Light-Emitting Diodes With DAA Doped Electron Transport Layer [J]. | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY , 2024 , 12 : 306-309 . |
| MLA | Chen, Haomin et al. "Efficient Quantum Dot Light-Emitting Diodes With DAA Doped Electron Transport Layer" . | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 12 (2024) : 306-309 . |
| APA | Chen, Haomin , Zeng, Qunying , Zhu, Yangbin , Wu, Tuo , Fan, Yijie , Guo, Tailiang et al. Efficient Quantum Dot Light-Emitting Diodes With DAA Doped Electron Transport Layer . | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY , 2024 , 12 , 306-309 . |
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Quantum dot light-emitting diodes (QLEDs), as an emerging display technology, have garnered widespread attention due to their excellent color rendering, high efficiency, and long lifespan. However, the inherent differences in the properties of charge transport layer materials inevitably lead to charge injection imbalances and low device performance. Herein, we developed a simple technique by using femtosecond laser scanning over the QLED devices. The results indicate that scanning with a femtosecond laser improves the conductivity of the hole transport layer and increases the external quantum efficiency of the QLED devices. Our work provides an effective route for realizing high performance QLED devices with efficient post-treatment. (c) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
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| GB/T 7714 | Wang, Dingke , Zhuang, Jiaqing , Hou, Wenjun et al. High efficiency quantum dot light-emitting diodes with femtosecond laser post-treatment [J]. | AIP ADVANCES , 2024 , 14 (4) . |
| MLA | Wang, Dingke et al. "High efficiency quantum dot light-emitting diodes with femtosecond laser post-treatment" . | AIP ADVANCES 14 . 4 (2024) . |
| APA | Wang, Dingke , Zhuang, Jiaqing , Hou, Wenjun , Yan, Xiaolin , Hu, Hailong , Guo, Tailiang et al. High efficiency quantum dot light-emitting diodes with femtosecond laser post-treatment . | AIP ADVANCES , 2024 , 14 (4) . |
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