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学者姓名：胡海龙
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Abstract ：
The rapid development of near-eye display has put forward higher requirements for the resolution and image quality, while the performance of quantum dots (QDs) is virtually unlimited by pixel size, making them an ideal material for the next generation high-resolution display devices. However, there are still significant challenges in depositing multi-color pixels within the micron range and achieving high performance for the full-color quantum dot light emitting diodes (QLEDs). Herein, a combination of directional transfer printing and Langmuir-Blodgett (LB) technique was utilized to precisely transfer multi-color QDs arrays in the predetermined direction, and the full-color QDs arrays demonstrated fantastic morphology and uniform arrangement. As a result, the full-color QLEDs showed excellent performance with a resolution of 6350 pixels per inch (PPI), a luminance up to 62,947 cd/m2 and a peak external quantum efficiency (EQE) of 10.03 %. In addition, pixel spacing layers were introduced to further suppress electrical crosstalk and unwanted light emission, and the redundant part of emissive layers enabled QDs to be embedded into pixel spacing layers readily. The resulting full-color QLEDs with independent pixels exhibited a same high resolution of 6350 PPI, with a luminance of 35,427 cd/m2 and a peak EQE of 8.55 %. Our work represents the best performance of full-color QLEDs with both high efficiency and high resolution, which demonstrates great potential in the application of future near-eye displays.
Keyword ：
Full-color Full-color High-resolution High-resolution Light emitting diodes Light emitting diodes Quantum dots Quantum dots Transfer printing Transfer printing
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| GB/T 7714 | Yang, Kaiyu , Zheng, Hongxi , Zhong, Chao et al. High-resolution and high-performance full-color electroluminescent quantum dot light-emitting diodes [J]. | NANO ENERGY , 2025 , 138 . |
| MLA | Yang, Kaiyu et al. "High-resolution and high-performance full-color electroluminescent quantum dot light-emitting diodes" . | NANO ENERGY 138 (2025) . |
| APA | Yang, Kaiyu , Zheng, Hongxi , Zhong, Chao , Huang, Xingyun , Zhang, Qingkai , Yu, Kuibao et al. High-resolution and high-performance full-color electroluminescent quantum dot light-emitting diodes . | NANO ENERGY , 2025 , 138 . |
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Abstract ：
Electrohydrodynamic (EHD) printing is a promising method for manufacturing high-resolution quantum dot light-emitting diodes (QLEDs). The stability of the EHD printing process and the morphology of final quantum dot (QD) film are highly dependent on the ink formulation. To solve this problem, we selected a ternary solvent (decahydronaphthalene, tetradecane and nonane) ink for cadmium-based QDs (CdSe/ZnS) to achieve excellent QD dispersion while eliminating the "coffee ring" effect, resulting in high quality QD films. We also fabricated a complete QLED device by printing a light-emitting layer formed by linearly aligned strips of QDs, achieving an external quantum efficiency (EQE) of 19.2 %, which is one of the highest levels of printing devices. On this basis, we introduced patterned PMMA structures prepared by nanoimprinting method to achieve ultrahigh resolu-tion devices. The pixel density achieved was 8,758 pixels per inch (PPI), with a maximum EQE of 10.5 %. The luminance is 9530.43 cd/m2 at a voltage of 4 volts. This work shows promising potential in realizing ultra-high resolution and high-performance QLEDs.
Keyword ：
Electrohydrodynamic printing Electrohydrodynamic printing light-emitting diodes light-emitting diodes quantum dot quantum dot ultra-high resolution ultra-high resolution
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| GB/T 7714 | Zeng, Qunying , Fan, Yijie , Zhu, Yangbin et al. Electrohydrodynamic Printing Enables Ultrahigh Resolution Quantum Dot Light-Emitting Diodes [J]. | IEEE ELECTRON DEVICE LETTERS , 2025 , 46 (1) : 64-67 . |
| MLA | Zeng, Qunying et al. "Electrohydrodynamic Printing Enables Ultrahigh Resolution Quantum Dot Light-Emitting Diodes" . | IEEE ELECTRON DEVICE LETTERS 46 . 1 (2025) : 64-67 . |
| APA | Zeng, Qunying , Fan, Yijie , Zhu, Yangbin , Guo, Tailiang , Hu, Hailong , Li, Fushan . Electrohydrodynamic Printing Enables Ultrahigh Resolution Quantum Dot Light-Emitting Diodes . | IEEE ELECTRON DEVICE LETTERS , 2025 , 46 (1) , 64-67 . |
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Abstract ：
Colloidal quantum dot (CQD) near-infrared (NIR) upconversion devices (UCDs) can directly convert low-energy NIR light into higher energy visible light without the need for additional integrated circuits, which is advantageous for NIR sensing and imaging. However, the state-of-the-art CQD NIR upconverters still face challenges, including high turn-on voltage (V on), low photon-to-photon (p-p) upconversion efficiency, and low current on/off ratio, primarily due to inherent limitations in the device structure and operating mechanisms. In this work, we developed a CQD NIR UCD based on a hole-only injection mechanism. Our device effectively suppresses electron injection from the cathode without hindering hole injection from the anode. As a result, the dark current of the device is reduced to a low level, which is favorable for the balance of photogenerated carriers and injected charges. Furthermore, we employed a liquid-phase ligand-exchange process to treat the PbS CQD photosensitive layer (PSL), which enhances the uniformity and charge transport capability of PSL, further optimizing the utilization of photogenerated carriers. We achieved a record high current on/off ratio exceeding 3.5 x 105 for the CQD NIR UCD. Additionally, the device exhibits a high p-p upconversion efficiency of 12.8% and a low V on of 1.8 V.
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| GB/T 7714 | Pan, Youjiang , Wu, Chunyan , Hu, Hailong et al. High-Performance Quantum Dot Near-Infrared Upconversion Devices Based on the Hole-Only Injection Mechanidsm [J]. | JOURNAL OF PHYSICAL CHEMISTRY LETTERS , 2025 , 16 (2) : 618-626 . |
| MLA | Pan, Youjiang et al. "High-Performance Quantum Dot Near-Infrared Upconversion Devices Based on the Hole-Only Injection Mechanidsm" . | JOURNAL OF PHYSICAL CHEMISTRY LETTERS 16 . 2 (2025) : 618-626 . |
| APA | Pan, Youjiang , Wu, Chunyan , Hu, Hailong , Guo, Tailiang , Yang, Guojian , Qian, Lei et al. High-Performance Quantum Dot Near-Infrared Upconversion Devices Based on the Hole-Only Injection Mechanidsm . | JOURNAL OF PHYSICAL CHEMISTRY LETTERS , 2025 , 16 (2) , 618-626 . |
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Abstract ：
文本到图像生成是一项极具挑战性的跨模态任务,目标是根据给定文本描述生成对应的图像.尽管现阶段相关研究在视觉呈现方面效果优异,但仍存在细节表达不够精细、语义一致性欠佳等问题.基于此,文章提出了一种基于语义增强的生成对抗模型,将文本进行编码后送入条件增强模块进行处理,丰富文本语义特征.在生成网络中,添加一个自适应块,在仿射变换前将上一层的输出和文本语义信息输入自适应块进行进一步的信息增强.并通过引入对比损失,提高文本与生成图像之间的语义一致性.将这一方法在MSCOCO和CUB birds 200 两个数据集上进行训练测试,实验结果表明,与其他模型相比,性能得到了较高提升.
Keyword ：
对比损失 对比损失 文本生成图像 文本生成图像 生成对抗网络 生成对抗网络 语义增强 语义增强
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| GB/T 7714 | 兰才俊 , 姚剑敏 , 胡海龙 et al. 基于语义增强的单阶段文本生成图像方法 [J]. | 信息技术与信息化 , 2025 , (1) : 5-9 . |
| MLA | 兰才俊 et al. "基于语义增强的单阶段文本生成图像方法" . | 信息技术与信息化 1 (2025) : 5-9 . |
| APA | 兰才俊 , 姚剑敏 , 胡海龙 , 陈恩果 , 严群 . 基于语义增强的单阶段文本生成图像方法 . | 信息技术与信息化 , 2025 , (1) , 5-9 . |
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Positive aging in quantum dot light-emitting diodes (QLEDs) is a common phenomenon, and its unpredictability is a serious problem for large size or high-resolution devices. In this work, the compact assembly of quantum dots (QDs) was realized by using Langmuir-Blodgett (LB) technology, and we propose a novel interactive mechanism for the positive aging of QLEDs based on the self-assembled QD film. We suggest that there is a quasi-monolayer phase between strictly solid phase and collapse during the LB process. The QD assembly states vary the external quantum efficiency (EQE) climbing process and the electroluminescent (EL) peak distribution during operation, as well as the aging rearrangement of QDs in the device. The tight alignment of QDs has low entropy and contributes to enhancing device stability. Our study contributes to the understanding of the origin of positive aging of QLEDs and holds potential for the practical application of QLEDs in displays.
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| GB/T 7714 | Zheng, Yueting , Luo, Chengyu , Hu, Hailong et al. Positive Aging in Quantum Dot Light-Emitting Diodes with Controllable Quantum Dot Assembly [J]. | JOURNAL OF PHYSICAL CHEMISTRY LETTERS , 2025 , 16 (12) : 2987-2995 . |
| MLA | Zheng, Yueting et al. "Positive Aging in Quantum Dot Light-Emitting Diodes with Controllable Quantum Dot Assembly" . | JOURNAL OF PHYSICAL CHEMISTRY LETTERS 16 . 12 (2025) : 2987-2995 . |
| APA | Zheng, Yueting , Luo, Chengyu , Hu, Hailong , Guo, Tailiang , Li, Fushan . Positive Aging in Quantum Dot Light-Emitting Diodes with Controllable Quantum Dot Assembly . | JOURNAL OF PHYSICAL CHEMISTRY LETTERS , 2025 , 16 (12) , 2987-2995 . |
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Abstract ：
采用基于配体交联反应的直接光刻法制备了均匀的红、绿、蓝三基色无镉量子点薄膜，并以此作为发光层制备出了高分辨全彩QLED器件（子像素直径为3μm）。引入不同的电荷阻挡层以降低器件非发光区域的漏电流。最终，采用PMMA电荷阻挡层可明显提升全彩无镉QLED器件性能，器件的最大亮度为26 204 cd/m
Keyword ：
无镉量子点发光器件 无镉量子点发光器件 直接光刻法 直接光刻法 配体交联 配体交联 高分辨 高分辨
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| GB/T 7714 | 刘延兵 , 郄媛 , 李福山 et al. 基于配体交联反应的直接光刻法制备全彩无镉量子点发光器件 [J]. | 光电子技术 , 2025 , 45 (02) : 123-127 . |
| MLA | 刘延兵 et al. "基于配体交联反应的直接光刻法制备全彩无镉量子点发光器件" . | 光电子技术 45 . 02 (2025) : 123-127 . |
| APA | 刘延兵 , 郄媛 , 李福山 , 胡海龙 . 基于配体交联反应的直接光刻法制备全彩无镉量子点发光器件 . | 光电子技术 , 2025 , 45 (02) , 123-127 . |
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Direct photolithography is a feasible patterning technique that facilitates the creation of ultrafine full-color quantum dot (QD) arrays. However, the lithographic pixel size is primarily limited by the wavelength of ultraviolet (UV) light passing through the photomask. Here, we report an ingenious patterning strategy for circumventing pixel resolution limitations via a maskless photolithography, which can readily produce uniform submicrometer patterns (0.5 mu m using a 365 nm UV light). Monolayer photo-cross-linkers are nanoimprinted onto the QD layer to bridge the surface ligands between adjacent QDs under UV irradiation, thereby generating stable QD patterns after developing. More importantly, the molecularly thick photo-cross-linker weakens the electron injection ability and reduces the interface exciton quenching to improve the fluorescence lifetime. We have successfully fabricated high-performance QD light-emitting diodes (QLEDs) with a resolution of 25,400 pixels per inch. This study expands the toolbox for overcoming the diffraction limit of photolithography to achieve ultrahigh resolution QLEDs.
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| GB/T 7714 | Qie, Yuan , Hu, Hailong , Yu, Kuibao et al. Breaking the Ultraviolet Lithography Limit to Achieve Submicron Quantum Dot Light-Emitting Array Devices [J]. | ACS MATERIALS LETTERS , 2025 , 7 (4) : 1269-1274 . |
| MLA | Qie, Yuan et al. "Breaking the Ultraviolet Lithography Limit to Achieve Submicron Quantum Dot Light-Emitting Array Devices" . | ACS MATERIALS LETTERS 7 . 4 (2025) : 1269-1274 . |
| APA | Qie, Yuan , Hu, Hailong , Yu, Kuibao , Wu, Rui , Zhong, Chao , Li, Renjie et al. Breaking the Ultraviolet Lithography Limit to Achieve Submicron Quantum Dot Light-Emitting Array Devices . | ACS MATERIALS LETTERS , 2025 , 7 (4) , 1269-1274 . |
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Abstract ：
采用Langmuir-Blodgett技术构建致密排列的红/蓝混合量子点单层膜，利用蓝光量子点对电子注入的抑制效应，精确调控器件两端载流子注入能力，实现纯红光发射的高性能QLED器件。结果表明，掺入10%蓝光量子点的单层量子点发光器件外量子效率达到25.7%，与对照器件相比提升约35%，为构建高效率QLED提供了新的思路。
Keyword ：
单层量子点 单层量子点 朗缪尔-布洛杰特技术 朗缪尔-布洛杰特技术 载流子注入平衡 载流子注入平衡 量子点发光器件 量子点发光器件
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| GB/T 7714 | 游逸琪 , 林伟彬 , 胡海龙 . 自组装单层量子点发光器件性能优化设计 [J]. | 光电子技术 , 2025 , 45 (02) : 112-116 . |
| MLA | 游逸琪 et al. "自组装单层量子点发光器件性能优化设计" . | 光电子技术 45 . 02 (2025) : 112-116 . |
| APA | 游逸琪 , 林伟彬 , 胡海龙 . 自组装单层量子点发光器件性能优化设计 . | 光电子技术 , 2025 , 45 (02) , 112-116 . |
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State-of-the-art reservoir computing (RC) systems rely on preprocessed images as the input layer's signal source, lacking the capacity to directly identify physical targets. In this study, we develop a near-infrared sensor RC system tailored for direct physical target detection. This system integrates a lead sulfide quantum dots (PbS QDs)-based near-infrared sensor array, zinc oxide (ZnO)-based memristors, and peripheral circuits. The PbS QDs sensor array serves as the signal source of the input layer of the RC system, capturing image information through near-infrared light and converting it into a temporal signal that is input into a reservoir composed of ZnO memristors. Memristors exhibit robust resistance switching stability and synaptic characteristics, enabling superior reservoir state separation within RC systems. The results demonstrate that the recognition accuracy for 5 × 4 digital images exceeds 88 %. This system provides a promising way for the future development of intelligent infrared cameras and shows its potential in complex target recognition. © 2025 Elsevier B.V.
Keyword ：
Image coding Image coding Proximity sensors Proximity sensors
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| GB/T 7714 | Wu, Rui , Pan, Youjiang , Hu, Hailong et al. A near infrared sensing reservoir computing system for entity target recognition [J]. | Chemical Engineering Journal , 2025 , 514 . |
| MLA | Wu, Rui et al. "A near infrared sensing reservoir computing system for entity target recognition" . | Chemical Engineering Journal 514 (2025) . |
| APA | Wu, Rui , Pan, Youjiang , Hu, Hailong , Guo, Tailiang , Li, Fushan . A near infrared sensing reservoir computing system for entity target recognition . | Chemical Engineering Journal , 2025 , 514 . |
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显示器作为信息传递的载体,对于人们的生活、工作至关重要.随着信息时代的发展,人们对显示质量提出了更高要求,显示单元逐渐趋向于微小化,以满足信息交互的需要.在"元宇宙"和虚拟/增强现实(VR/AR)等新型概念与技术的推动下,微显示技术蓬勃发展.量子点作为微小的发光单元,具有独特的性能优势,包括高色纯度、高量子产率以及可调的发光峰等,其性能几乎不受发光单元尺寸的影响,是实现高性能微显示的有效途径.本文介绍了近年来量子点微显示技术的发展现状,包括图案化技术、全彩化技术以及图案化器件的性能研究和驱动策略,并讨论了其应用前景以及目前面临的主要挑战.本综述对量子点微显示技术研究具有一定的参考价值.
Keyword ：
全彩化技术 全彩化技术 图案化技术 图案化技术 微显示 微显示 量子点 量子点
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| GB/T 7714 | 钟超 , 胡海龙 , 郭太良 et al. 量子点微显示技术的发展与挑战(特邀) [J]. | 中国激光 , 2025 , 52 (5) : 193-212 . |
| MLA | 钟超 et al. "量子点微显示技术的发展与挑战(特邀)" . | 中国激光 52 . 5 (2025) : 193-212 . |
| APA | 钟超 , 胡海龙 , 郭太良 , 李福山 . 量子点微显示技术的发展与挑战(特邀) . | 中国激光 , 2025 , 52 (5) , 193-212 . |
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