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author:

Lv, Shanhong (Lv, Shanhong.) [1] | Yang, Kaiyu (Yang, Kaiyu.) [2] (Scholars:杨开宇) | Wu, Chaoxing (Wu, Chaoxing.) [3] (Scholars:吴朝兴) | Wang, Kun (Wang, Kun.) [4] | Chen, Rong (Chen, Rong.) [5] (Scholars:陈容) | Chen, Xiang (Chen, Xiang.) [6] | Ju, Songman (Ju, Songman.) [7] | Luo, Zhiqi (Luo, Zhiqi.) [8] | Zhao, Haobing (Zhao, Haobing.) [9] | Guo, Tailiang (Guo, Tailiang.) [10] (Scholars:郭太良) | Li, Fushan (Li, Fushan.) [11] (Scholars:李福山)

Indexed by:

EI SCIE

Abstract:

Nowadays, direct current-drive (DC-drive) is the mainstream method of driving electroluminescence (EL) devices such as quantum-dot light-emitting diodes (QLEDs). In contrast, alternating current-drive (AC-drive), as an alternative to DC-drive, has achieved lots of significant research results in recent years. And AC-drive is expected to reduce equipment manufacturing costs by reducing the use of power converters and rectifiers. However, our understanding of the light-emitting mechanism for QLED under AC-drive is still not thorough. In this work, the optoelectronic characteristics of QLED under different AC-driven frequencies are systematically studied and the equivalent circuit model is proposed by combining the experimental results with simulation results. Moreover, the working mechanism of the equivalent circuit and the carrier transport model are explained in detail, especially under high frequencies. This research helps us deepen our understanding of the working mechanism of QLEDs, broadens the application fields of AC-drive, and paves the way for the further use of AC-driven EL devices.

Keyword:

Alternating current-drive (AC-drive) Brightness Capacitors equivalent circuit Equivalent circuits High frequency Integrated circuit modeling light-emitting diode quantum-dots Quantum dots Resistors

Community:

  • [ 1 ] [Lv, Shanhong]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 2 ] [Yang, Kaiyu]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 3 ] [Wu, Chaoxing]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 4 ] [Wang, Kun]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 5 ] [Chen, Rong]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 6 ] [Chen, Xiang]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 7 ] [Ju, Songman]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 8 ] [Luo, Zhiqi]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 9 ] [Zhao, Haobing]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 10 ] [Guo, Tailiang]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China
  • [ 11 ] [Li, Fushan]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China

Reprint 's Address:

  • 杨开宇 李福山

    [Yang, Kaiyu]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China;;[Li, Fushan]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350116, Peoples R China

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Source :

IEEE ELECTRON DEVICE LETTERS

ISSN: 0741-3106

Year: 2022

Issue: 2

Volume: 43

Page: 256-259

4 . 9

JCR@2022

4 . 1 0 0

JCR@2023

ESI Discipline: ENGINEERING;

ESI HC Threshold:66

JCR Journal Grade:2

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 6

SCOPUS Cited Count: 6

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 8

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