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学者姓名：杨开宇
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Abstract ：
With the development of near-eye displays, the demands for display resolution and performance are increasing. Quantum dot performance is virtually independent of pixel size, making it an efficient way to display ultrahigh resolution. However, the low efficiency of high-resolution quantum dot devices has been an urgent technical bottleneck to be solved. Here, we constructed a dense single-molecule modification layer and a leakage current blocking layer for high-resolution devices using self-assembly, thereby realizing ultrahigh-resolution, high-efficiency, and stable high-resolution quantum dot light-emitting diodes (QLEDs). The peak external quantum efficiencies of the red devices are 24.68% (8759 PPI) and 19.54% (26075 PPI), respectively, with an exceptional long lifetime (T 95@1000 nit) up to 4871 h. In addition, we explored the feasibility of this modification strategy on non-Cd-based quantum dots. In conclusion, our strategy effectively improves the performance of high-resolution devices and provides a superior approach for realizing near-eye display applications.
Keyword ：
Light-emittingdevice Light-emittingdevice Quantum dots Quantum dots Self-assembly Self-assembly Single-molecular modificationlayer Single-molecular modificationlayer Ultrahighresolution Ultrahighresolution
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| GB/T 7714 | Zhong, Chao , Alsharafi, Rashed , Hu, Hailong et al. High-Performance, High-Resolution Quantum Dot Light-Emitting Diodes with Self-Assembly Single-Molecular Interface Modification [J]. | NANO LETTERS , 2024 , 24 (44) : 14125-14132 . |
| MLA | Zhong, Chao et al. "High-Performance, High-Resolution Quantum Dot Light-Emitting Diodes with Self-Assembly Single-Molecular Interface Modification" . | NANO LETTERS 24 . 44 (2024) : 14125-14132 . |
| APA | Zhong, Chao , Alsharafi, Rashed , Hu, Hailong , Yu, Kuibao , Yang, Kaiyu , Guo, Tailiang et al. High-Performance, High-Resolution Quantum Dot Light-Emitting Diodes with Self-Assembly Single-Molecular Interface Modification . | NANO LETTERS , 2024 , 24 (44) , 14125-14132 . |
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Photosensitive quantum dot light-emitting diodes (PSQLEDs) possess the dual capabilities of generating and detecting light signals, which is of significant importance for the development of miniaturized and integrated optoelectronic devices. However, the state-of-the-art PSQLEDs can only detect light signals within a certain wavelength range, and require switching between the two functions under different bias voltage directions. In this work, The use of a ZnO/quantum dots (QDs)/ZnO multilayer (ZQZ ML) architecture as both the electron transport layer and the photosensitive layer is pioneered. The QDs in this structure are composed of narrow-bandgap lead sulfide QDs and wide-bandgap cadmium selenide QDs, successfully realizing a unique PSQLED device with C photosensitive characteristics. As a result, the as-fabricated device can respond to illumination from 365 to 1300 nm, and the device achieves a photoresponse rate of 20.9 mA W−1 in self-powered mode to UV light. After UV light irradiation, the maximum external quantum efficiency and maximum luminance of device reached 11.8% and 64,549 cd m−2, respectively. The device shows a record-high luminance ON/OFF ratio of 5500%, which is beneficial for high contrast and accurate information display. © 2024 Wiley-VCH GmbH.
Keyword ：
broad-spectrum detection broad-spectrum detection dual-functional dual-functional light-emitting device light-emitting device photosensitive photosensitive quantum dot quantum dot
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| GB/T 7714 | Pan, Y. , Hu, H. , Yang, K. et al. Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity [J]. | Advanced Optical Materials , 2024 , 12 (26) . |
| MLA | Pan, Y. et al. "Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity" . | Advanced Optical Materials 12 . 26 (2024) . |
| APA | Pan, Y. , Hu, H. , Yang, K. , Chen, W. , Lin, L. , Guo, T. et al. Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity . | Advanced Optical Materials , 2024 , 12 (26) . |
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Perovskite light-emitting diodes (PeLEDs) have attracted wide attention due to their excellent photoelectric properties. A variety of additives have been studied for perovskite emission layers to enhance the performance of PeLEDs. However, the buried interface, which also has significant influence on the crystallization kinetics and exciton recombination dynamics of the perovskite emission layer, remains to be explored. In this work, we introduced a new ionic liquid 1-Ethyl-3-methylimidazolium dicyanamide (EMIM DCA) with the characteristics of low viscosity and high conductivity into the interfacial layer between the hole transport layer (HTL) and the perovskite film. Due to the strong interaction between the EMIM DCA and perovskite, the crystallization of the perovskite film is obviously improved and the defects at the interface are well passivated. As a result, the nonradiative recombination in the interlayer is significantly reduced. In addition, the introduction of EMIM DCA promoted the injection of charge carriers, thus achieving a high luminance of 32310 cd m(-2) and enabling the maximum external quantum efficiency (EQE) of the PeLEDs increased from 10.2 % to 18.7 %.
Keyword ：
Buried interface Buried interface Ionic liquids Ionic liquids Light-emitting diodes Light-emitting diodes Perovskite Perovskite Q-2D Q-2D
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| GB/T 7714 | Yang, Kaiyu , Xu, Baolin , Lin, Qiuxiang et al. Interface engineering with ionic liquid for achieving efficient Quasi-2D perovskite light-emitting diodes [J]. | CHEMICAL ENGINEERING JOURNAL , 2024 , 483 . |
| MLA | Yang, Kaiyu et al. "Interface engineering with ionic liquid for achieving efficient Quasi-2D perovskite light-emitting diodes" . | CHEMICAL ENGINEERING JOURNAL 483 (2024) . |
| APA | Yang, Kaiyu , Xu, Baolin , Lin, Qiuxiang , Yu, Yongshen , Hu, Hailong , Li, Fushan . Interface engineering with ionic liquid for achieving efficient Quasi-2D perovskite light-emitting diodes . | CHEMICAL ENGINEERING JOURNAL , 2024 , 483 . |
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由于量子点优异的材料特性，包括可调的能带间隙、高量子产率、高稳定性和可低成本地溶液加工等，其在显示领域引发了浓厚的兴趣和研究热潮。近年来，随着全世界对高质量显示的需求日益增长，特别是随着虚拟/增强现实（VR/AR）等近眼显示技术的兴起，对高亮度、高分辨率、高效率以及低功耗的显示技术提出了更高的要求。本文全面探讨了高分辨率量子点图案化技术，深入解析它们的工艺流程，并详细阐述它们在量子点显示器件中的各种应用。此外，还概述了高分辨率量子点图案化技术在实际应用中所面临的主要挑战。我们认为，要将高分辨率量子点图案化技术真正地应用到实际设备中，必须全面考虑各种因素，不仅包括从图案化技术出发，同时还涉及到从材料选择和器件结构设计等多个角度的深入思考和策划。本综述可为高分辨率量子点图案化技术行业的发展和研究提供有价值的参考。
Keyword ：
图案化技术 图案化技术 显示技术 显示技术 量子点 量子点 高分辨率 高分辨率
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| GB/T 7714 | 潘友江 , 林立华 , 杨开宇 et al. 高分辨率量子点图案化技术 [J]. | 光学学报 , 2024 , 44 (02) : 44-59 . |
| MLA | 潘友江 et al. "高分辨率量子点图案化技术" . | 光学学报 44 . 02 (2024) : 44-59 . |
| APA | 潘友江 , 林立华 , 杨开宇 , 陈伟 , 胡海龙 , 郭太良 et al. 高分辨率量子点图案化技术 . | 光学学报 , 2024 , 44 (02) , 44-59 . |
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Perovskite light-emitting diodes (PeLEDs) have emerged as a prominent area of research in recent years, owing to their promising prospects for application in solid-state lighting and high-resolution displays. High performance has been achieved in the green and red emissions. However, blue PeLEDs, which are critical for display applications, are less efficient. The interfacial problem between the perovskite emission layer and the charge injection layer significantly hinders the device performance. Here, we introduced l-aspartic acid potassium (PLAK) into the hole injection layer, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The amino and carboxyl groups as well as potassium ions in the additive not only improved the wettability of PEDOT:PSS but also increased the nucleation sites at the interface, which simultaneously improved the film morphology and crystallinity, and fully passivated the bottom interface of the perovskite. In addition, the introduction of PLAK reduced the release of indium from ITO induced by acid PEDOT:PSS, thereby further inhibiting exciton quenching in the perovskite layer. Moreover, it achieved a better band alignment and successfully reduced the turn-on voltage of PeLEDs from 3.2 V to 2.9 V. Finally, the prepared blue PeLEDs emitted at 484 nm with the external quantum efficiency doubled from 3.23% to 6.98%. Our approach provides an effective strategy of buried interface engineering for improving the performance of blue PeLEDs. The synergistic effect of the doping strategy of basic amino acid salts at the interface enables the simultaneous modification of PEDOT:PSS and the bottom interface of the perovskite film to achieve efficient sky-blue PeLEDs.
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| GB/T 7714 | Yang, Kaiyu , Lin, Qiuxiang , Xu, Baolin et al. Synergistic interaction of multi-functional additives at the buried interface for efficient blue perovskite light-emitting diodes [J]. | JOURNAL OF MATERIALS CHEMISTRY C , 2024 , 12 (11) : 4123-4129 . |
| MLA | Yang, Kaiyu et al. "Synergistic interaction of multi-functional additives at the buried interface for efficient blue perovskite light-emitting diodes" . | JOURNAL OF MATERIALS CHEMISTRY C 12 . 11 (2024) : 4123-4129 . |
| APA | Yang, Kaiyu , Lin, Qiuxiang , Xu, Baolin , Yu, Yongshen , Hu, Hailong , Li, Fushan . Synergistic interaction of multi-functional additives at the buried interface for efficient blue perovskite light-emitting diodes . | JOURNAL OF MATERIALS CHEMISTRY C , 2024 , 12 (11) , 4123-4129 . |
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Quantum dot light-emitting diodes (QLEDs) have attracted increasing attention due to their excellent electroluminescent properties and compatibility with inkjet printing processes, which show great potential in applications of pixelated displays. However, the relatively low resolution of the inkjet printing technology limits its further development. In this paper, high-resolution QLEDs were successfully fabricated by electrohydrodynamic (EHD) printing. A pixelated quantum dot (QD) emission layer was formed by printing an insulating Teflon mesh on a spin-coated QD layer. The patterned QLEDs show a high resolution of 2540 pixels per inch (PPI), with a maximum external quantum efficiency (EQE) of 20.29% and brightness of 35816 cd/m2. To further demonstrate its potential in full-color display, the fabrication process for the QD layer was changed from spin-coating to EHD printing. The as-printed Teflon effectively blocked direct contact between the hole transport layer and the electron transport layer, thus preventing leakage currents. As a result, the device showed a resolution of 1692 PPI with a maximum EQE of 15.40%. To the best of our knowledge, these results represent the highest resolution and efficiency of pixelated QLEDs using inkjet printing or EHD printing, which demonstrates its huge potential in the application of high-resolution full-color displays. © 2024 American Chemical Society.
Keyword ：
Electrohydrodynamics Electrohydrodynamics Electroluminescence Electroluminescence Electron transport properties Electron transport properties Ink jet printing Ink jet printing Leakage currents Leakage currents Luminance Luminance Nanocrystals Nanocrystals Organic light emitting diodes (OLED) Organic light emitting diodes (OLED) Polytetrafluoroethylenes Polytetrafluoroethylenes Quantum efficiency Quantum efficiency Semiconductor quantum dots Semiconductor quantum dots
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| GB/T 7714 | Yang, Kaiyu , Weng, Xukeng , Feng, Jiahuan et al. High-Resolution Quantum Dot Light-Emitting Diodes by Electrohydrodynamic Printing [J]. | ACS Applied Materials and Interfaces , 2024 , 16 (7) : 9544-9550 . |
| MLA | Yang, Kaiyu et al. "High-Resolution Quantum Dot Light-Emitting Diodes by Electrohydrodynamic Printing" . | ACS Applied Materials and Interfaces 16 . 7 (2024) : 9544-9550 . |
| APA | Yang, Kaiyu , Weng, Xukeng , Feng, Jiahuan , Yu, Yongshen , Xu, Baolin , Lin, Qiuxiang et al. High-Resolution Quantum Dot Light-Emitting Diodes by Electrohydrodynamic Printing . | ACS Applied Materials and Interfaces , 2024 , 16 (7) , 9544-9550 . |
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Significance The evolution of display technology is a cornerstone of modern technological advancement, fundamentally transforming how humans interact with machines. This transformation is vividly apparent in human-computer interactions, where the integration of sophisticated display technologies has led to more intuitive and immersive experiences. The global living standard improvement has further fueled expectations for advanced display devices, with consumers seeking higher quality, efficiency, and functionality. The advent of near-eye display technologies such as augmented reality (AR), mixed reality (MR), and virtual reality (VR) has only heightened the demands for high-resolution microdisplays. These emerging technologies require displays that provide not only high resolution but also compactness, energy efficiency, and the ability to reproduce colors accurately and vividly. The current market is dominated by micro-LED technology and recognized for its superior brightness and energy efficiency. However, the production of full-color micro-LEDs poses significant challenges, chiefly in the massive transfer of differently colored LED chips onto a single wafer. This process demands an exceptionally high yield rate, making it both technologically challenging and costly. As a new type of semiconductor nanocrystal materials with quantum confinement effects, quantum dots (QDs) have sparked great interest in the display field due to their unique properties such as tunable bandgaps, high quantum yields, high stability, and potential for cost-effective solution processing. QDs typically adopt a core- shell structure [Fig. 1(a)] and by adjusting the energy levels of the core-shell structure, excitons within the QDs can be confined. Organic ligands on the surface of QD shells provide steric hindrance among the dots, thus preventing aggregation and fluorescence quenching. The physicochemical properties of QDs can be adjusted by changing their organic ligands. Since Alivisatos's research team first reported LEDs with QDs as the electroluminescent layer in 1994, QD display devices have undergone 30 years of research. Additionally, high-resolution display devices using QDs have been realized via various patterning technologies to exhibit excellent device performance and fine pixel patterns. Although high-resolution patterning technology based on QDs has been extensively studied, there is still a lack of comprehensive reviews and summaries of recent work. Therefore, it is significant to summarize existing research and explore future development trends. Progress The current leading high-resolution QD patterning technologies encompass inkjet printing, photolithography, photo-crosslinking, region-selective deposition, transfer printing, and in-situ fabrication. These technologies are thoroughly compared and summarized in their process flows, strengths, and weaknesses, as depicted in Figs. 2, 6, and 8-12. In 2023, the team led by researcher Chen Zhuo from BOE Technology Group Co., Ltd. utilized electrospray inkjet printing for fabricating both bottom-emitting and top-emitting electroluminescent QD devices, achieving a resolution of 500 ppi. In 2020, the team of Xu Xiaoguang at BOE successfully created a 500 ppi full-color passive matrix QD light-emitting device by a sacrificial layer-assisted photolithography method. That same year, Moon Sung Kang and the team at Sogang University in the republic of Korea developed a method for patterning QDs with a photo-driven ligand crosslinking agent, successfully producing full- color QD patterns with a resolution of 1400 ppi. In 2021, Sun Xiaowei and the team at Southern University of Science and Technology achieved a large-area full-color QD thin film with 1000 ppi resolution via selective electrophoretic deposition. In 2019, Hu Binbin at Henan University reported on assembling QD nanoparticles into microstructures via wetting-induced deposition. In 2021, the team led by Chen Shuming at Southern University of Science and Technology built a resonant cavity in white light QD light-emitting devices to achieve full-color patterned QD devices and a QD film patterning resolution of 8465 ppi. In 2015, Taeghwan Hyeon and the team at the Institute for Basic Science in the republic of Korea realized QD light-emitting devices with a resolution of 2460 ppi using gravure transfer printing technology. In 2022, our team collaborated with the team of Qian Lei at the Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, integrated transfer printing with Langmuir-Blodgett film technology to create ultra-high pixel density QD light-emitting devices at 25400 ppi. In 2021, Zhong Haizheng and the team at the Beijing Institute of Technology prepared patterned CsPbI3 QD patterns on substrates via laser direct writing in situ. Conclusions and Prospects As carriers of visual information, display devices play an indispensable role in our daily lives. Emerging as revolutionary materials, QDs have become the ideal choice for next-generation display technologies with their unique properties such as tunable bandgaps, high quantum yields, and stability. Consequently, mastering high-resolution QD patterning is a crucial challenge that should be addressed for QD display devices to make significant strides in the market. In summary, various high-resolution QD patterning technologies require further detailed exploration to advance the applications and development of QD light-emitting devices in high-quality displays.
Keyword ：
display technology display technology high resolution high resolution patterning technology patterning technology quantum dot quantum dot
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| GB/T 7714 | Pan Youjiang , Lin Lihua , Yang Kaiyu et al. Patterning Technology of High-Resolution Quantum Dots [J]. | ACTA OPTICA SINICA , 2024 , 44 (2) . |
| MLA | Pan Youjiang et al. "Patterning Technology of High-Resolution Quantum Dots" . | ACTA OPTICA SINICA 44 . 2 (2024) . |
| APA | Pan Youjiang , Lin Lihua , Yang Kaiyu , Chen Wei , Hu Hailong , Guo Tailiang et al. Patterning Technology of High-Resolution Quantum Dots . | ACTA OPTICA SINICA , 2024 , 44 (2) . |
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Quasi-2D perovskite light-emitting diodes (PeLEDs) are promising candidates to realize superior luminescent. However, the poorly controlled phase distribution and surface defects hinder the improvement of the device's performance. Here, by introducing rubidium bromide (RbBr) to tune the crystallization kinetics of quasi-2D perovskites, more uniform phase distribution is achieved through the suppression of medium-n phases, resulting in narrower emission spectrum and more efficient energy transfer. Meanwhile, the defects are effectively passivated by the addition of RbBr. As a result, the photoluminescence quantum yield (PLQY) of quasi-2D perovskite films increases significantly from 45.6% to 81.3%, and the maximum external quantum efficiency (EQE) of PeLEDs reaches 18.92%. This finding provides a new insight into the phase distribution control of quasi-2D perovskites and the further improvement of PeLEDs.
Keyword ：
light-emitting diodes light-emitting diodes perovskites perovskites phase distribution phase distribution quasi-2D quasi-2D rubidium rubidium
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| GB/T 7714 | Yang, Kaiyu , Mao, Jinliang , Zheng, Jinping et al. Achieving Efficient Light-Emitting Diodes by Controlling Phase Distribution of Quasi-2D Perovskites [J]. | ADVANCED ELECTRONIC MATERIALS , 2023 , 9 (4) . |
| MLA | Yang, Kaiyu et al. "Achieving Efficient Light-Emitting Diodes by Controlling Phase Distribution of Quasi-2D Perovskites" . | ADVANCED ELECTRONIC MATERIALS 9 . 4 (2023) . |
| APA | Yang, Kaiyu , Mao, Jinliang , Zheng, Jinping , Yu, Yongshen , Xu, Baolin , Zhang, Qingkai et al. Achieving Efficient Light-Emitting Diodes by Controlling Phase Distribution of Quasi-2D Perovskites . | ADVANCED ELECTRONIC MATERIALS , 2023 , 9 (4) . |
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Perovskite quantum dots (PQDs) are promising in the fieldof light-emittingdiodes (LEDs) due to their adjustable band gap, high photoluminescencequantum yield, and high color purity. However, ion migration is proneto occur in the device due to the structural instability of PQDs,resulting in the degradation of external quantum efficiency. In thiswork, we proposed a strategy to realize a perovskite quantum dot light-emittingmemcapacitor (PQLEM) so as to enhance the electroluminescent performanceof PQDs. By varying the pre-bias voltage and time, the ion distributionand trap density in the PQD film could be modified, thereby affectingthe capacitance value and luminous efficiency of the device. Underthe memcapacitive effect, the external quantum efficiency (EQE) ofthe device increases from an initial 2.81 to 7.95%. This work providesa route for achieving perovskite quantum dot light-emitting deviceswith high luminous efficiency.
Keyword ：
efficiency efficiency ion migration ion migration light-emitting diodes light-emitting diodes memcapacitive memcapacitive perovskite quantum dots perovskite quantum dots
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| GB/T 7714 | Ju, Songman , Mao, Chaomin , Zheng, Jinping et al. Perovskite Quantum Dot Light-Emitting Memcapacitor [J]. | ACS APPLIED NANO MATERIALS , 2023 , 6 (11) : 9219-9225 . |
| MLA | Ju, Songman et al. "Perovskite Quantum Dot Light-Emitting Memcapacitor" . | ACS APPLIED NANO MATERIALS 6 . 11 (2023) : 9219-9225 . |
| APA | Ju, Songman , Mao, Chaomin , Zheng, Jinping , Yang, Kaiyu , Lin, Lihua , Guo, Tailiang et al. Perovskite Quantum Dot Light-Emitting Memcapacitor . | ACS APPLIED NANO MATERIALS , 2023 , 6 (11) , 9219-9225 . |
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金属卤化物钙钛矿量子点因其具有高光致发光量子产率、高色纯度、带隙可调等优良的光学性能，具备成为下一代发光显示材料的潜力。目前，红绿钙钛矿量子点发光二极管（PQLED）的电致发光效率已经达到有机发光二极管（OLED）的水平。然而，有机长链配体阻碍了电荷的传输，导致钙钛矿量子点发光二极管在最大外量子效率（EQE）下的亮度较低。为了实现钙钛矿量子点发光二极管在最大EQE下仍然具有较高的发光亮度，我们用无机配体CaBr_2部分替换有机长链配体，强化PQLED中的载流子传输，并提升电致发光的载流子注入。同有机长链配体和有机短链配体相比，无机配体能够减缓有机链存在所造成的电绝缘性，改善QDs电导性，进一步增强QDs的发光特性。基于这种策略，我们实现了在3 753 cd/m~2高亮度下峰值EQE为10.57%的钙钛矿量子点发光二极管。在6.6 V的工作电压下，PQLED的最大亮度高达116 612 cd/m~2。
Keyword ：
CaBr_2 CaBr_2 载流子传输 载流子传输 钙钛矿 钙钛矿 高亮度 高亮度
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| GB/T 7714 | 郑金平 , 杨开宇 , 李福山 . 强化载流子传输实现高亮度高效率钙钛矿量子点发光二极管 [J]. | 发光学报 , 2023 , 44 (06) : 933-941 . |
| MLA | 郑金平 et al. "强化载流子传输实现高亮度高效率钙钛矿量子点发光二极管" . | 发光学报 44 . 06 (2023) : 933-941 . |
| APA | 郑金平 , 杨开宇 , 李福山 . 强化载流子传输实现高亮度高效率钙钛矿量子点发光二极管 . | 发光学报 , 2023 , 44 (06) , 933-941 . |
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