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学者姓名：杨开宇
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Abstract ：
In the era of burgeoning information technology, ensuring the impregnable transmission of confidential information has emerged as a paramount global imperative. Traditional fluorescent encryption materials are limited in advanced encryption due to their visible properties under ultraviolet light, while improved stimulus-responsive encryption strategies are usually based on static information. Herein, we exploit a novel high-security encryption strategy using metal halides and perovskite quantum dots as invisible inks and developer, respectively. The decryption of the information is impervious to traditional decryption means, necessitating the possession of the appropriate quadruple key to accomplish the decryption process. This approach leverages the anion exchange mechanism between metal halides and perovskite quantum dots, thereby enabling a multilevel encryption system. Consequently, the strategy establishes a multitiered and multifaceted security framework, which has significant application potential in the protection of confidential information requiring a superior level of security and provides a novel encryption and decryption scheme in the field of information security.
Keyword ：
Anion exchange Anion exchange Dynamic encryption Dynamic encryption Informationsecurity Informationsecurity Multilevel encryption Multilevel encryption Perovskite quantum dot Perovskite quantum dot
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| GB/T 7714 | Lei, Longjie , Yang, Kaiyu , Liu, Yang et al. Anion Exchange-Induced Invisible Perovskite Encryption System with Time-Dependence for Confidential Information Security [J]. | ACS PHOTONICS , 2025 . |
| MLA | Lei, Longjie et al. "Anion Exchange-Induced Invisible Perovskite Encryption System with Time-Dependence for Confidential Information Security" . | ACS PHOTONICS (2025) . |
| APA | Lei, Longjie , Yang, Kaiyu , Liu, Yang , Zhang, Qingkai , Yu, Kuibao , Li, Fushan . Anion Exchange-Induced Invisible Perovskite Encryption System with Time-Dependence for Confidential Information Security . | ACS PHOTONICS , 2025 . |
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The rapid development of near-eye display has put forward higher requirements for the resolution and image quality, while the performance of quantum dots (QDs) is virtually unlimited by pixel size, making them an ideal material for the next generation high-resolution display devices. However, there are still significant challenges in depositing multi-color pixels within the micron range and achieving high performance for the full-color quantum dot light emitting diodes (QLEDs). Herein, a combination of directional transfer printing and Langmuir-Blodgett (LB) technique was utilized to precisely transfer multi-color QDs arrays in the predetermined direction, and the full-color QDs arrays demonstrated fantastic morphology and uniform arrangement. As a result, the full-color QLEDs showed excellent performance with a resolution of 6350 pixels per inch (PPI), a luminance up to 62,947 cd/m2 and a peak external quantum efficiency (EQE) of 10.03 %. In addition, pixel spacing layers were introduced to further suppress electrical crosstalk and unwanted light emission, and the redundant part of emissive layers enabled QDs to be embedded into pixel spacing layers readily. The resulting full-color QLEDs with independent pixels exhibited a same high resolution of 6350 PPI, with a luminance of 35,427 cd/m2 and a peak EQE of 8.55 %. Our work represents the best performance of full-color QLEDs with both high efficiency and high resolution, which demonstrates great potential in the application of future near-eye displays.
Keyword ：
Full-color Full-color High-resolution High-resolution Light emitting diodes Light emitting diodes Quantum dots Quantum dots Transfer printing Transfer printing
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| GB/T 7714 | Yang, Kaiyu , Zheng, Hongxi , Zhong, Chao et al. High-resolution and high-performance full-color electroluminescent quantum dot light-emitting diodes [J]. | NANO ENERGY , 2025 , 138 . |
| MLA | Yang, Kaiyu et al. "High-resolution and high-performance full-color electroluminescent quantum dot light-emitting diodes" . | NANO ENERGY 138 (2025) . |
| APA | Yang, Kaiyu , Zheng, Hongxi , Zhong, Chao , Huang, Xingyun , Zhang, Qingkai , Yu, Kuibao et al. High-resolution and high-performance full-color electroluminescent quantum dot light-emitting diodes . | NANO ENERGY , 2025 , 138 . |
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Photosensitive quantum dot light-emitting diodes (PSQLEDs) possess the dual capabilities of generating and detecting light signals, which is of significant importance for the development of miniaturized and integrated optoelectronic devices. However, the state-of-the-art PSQLEDs can only detect light signals within a certain wavelength range, and require switching between the two functions under different bias voltage directions. In this work, The use of a ZnO/quantum dots (QDs)/ZnO multilayer (ZQZ ML) architecture as both the electron transport layer and the photosensitive layer is pioneered. The QDs in this structure are composed of narrow-bandgap lead sulfide QDs and wide-bandgap cadmium selenide QDs, successfully realizing a unique PSQLED device with C photosensitive characteristics. As a result, the as-fabricated device can respond to illumination from 365 to 1300 nm, and the device achieves a photoresponse rate of 20.9 mA W−1 in self-powered mode to UV light. After UV light irradiation, the maximum external quantum efficiency and maximum luminance of device reached 11.8% and 64,549 cd m−2, respectively. The device shows a record-high luminance ON/OFF ratio of 5500%, which is beneficial for high contrast and accurate information display. © 2024 Wiley-VCH GmbH.
Keyword ：
broad-spectrum detection broad-spectrum detection dual-functional dual-functional light-emitting device light-emitting device photosensitive photosensitive quantum dot quantum dot
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| GB/T 7714 | Pan, Y. , Hu, H. , Yang, K. et al. Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity [J]. | Advanced Optical Materials , 2024 , 12 (26) . |
| MLA | Pan, Y. et al. "Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity" . | Advanced Optical Materials 12 . 26 (2024) . |
| APA | Pan, Y. , Hu, H. , Yang, K. , Chen, W. , Lin, L. , Guo, T. et al. Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity . | Advanced Optical Materials , 2024 , 12 (26) . |
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Abstract ：
Photosensitive quantum dot light-emitting diodes (PSQLEDs) possess the dual capabilities of generating and detecting light signals, which is of significant importance for the development of miniaturized and integrated optoelectronic devices. However, the state-of-the-art PSQLEDs can only detect light signals within a certain wavelength range, and require switching between the two functions under different bias voltage directions. In this work, The use of a ZnO/quantum dots (QDs)/ZnO multilayer (ZQZ ML) architecture as both the electron transport layer and the photosensitive layer is pioneered. The QDs in this structure are composed of narrow-bandgap lead sulfide QDs and wide-bandgap cadmium selenide QDs, successfully realizing a unique PSQLED device with C photosensitive characteristics. As a result, the as-fabricated device can respond to illumination from 365 to 1300 nm, and the device achieves a photoresponse rate of 20.9 mA W-1 in self-powered mode to UV light. After UV light irradiation, the maximum external quantum efficiency and maximum luminance of device reached 11.8% and 64,549 cd m-2, respectively. The device shows a record-high luminance ON/OFF ratio of 5500%, which is beneficial for high contrast and accurate information display. A quantum dot light-emitting diode (QLED) is developed with UV-vis-NIR photosensitive characteristics based on a ZnO/QDs/ZnO multilayer structure. This device can respond to UV to NIR signals in self-powered mode. Additionally, after UV light irradiation, the device achieves a maximum external quantum efficiency of 11.8% and a luminance of 64,549 cd m-2, with a record-high luminance ON/OFF ratio of 5500%. image
Keyword ：
broad-spectrum detection broad-spectrum detection dual-functional dual-functional light-emitting device light-emitting device photosensitive photosensitive quantum dot quantum dot
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| GB/T 7714 | Pan, Youjiang , Hu, Hailong , Yang, Kaiyu et al. Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity [J]. | ADVANCED OPTICAL MATERIALS , 2024 , 12 (26) . |
| MLA | Pan, Youjiang et al. "Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity" . | ADVANCED OPTICAL MATERIALS 12 . 26 (2024) . |
| APA | Pan, Youjiang , Hu, Hailong , Yang, Kaiyu , Chen, Wei , Lin, Lihua , Guo, Tailiang et al. Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity . | ADVANCED OPTICAL MATERIALS , 2024 , 12 (26) . |
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Quantum dot light-emitting diodes (QLEDs) have attracted increasing attention due to their excellent electroluminescent properties and compatibility with inkjet printing processes, which show great potential in applications of pixelated displays. However, the relatively low resolution of the inkjet printing technology limits its further development. In this paper, high-resolution QLEDs were successfully fabricated by electrohydrodynamic (EHD) printing. A pixelated quantum dot (QD) emission layer was formed by printing an insulating Teflon mesh on a spin-coated QD layer. The patterned QLEDs show a high resolution of 2540 pixels per inch (PPI), with a maximum external quantum efficiency (EQE) of 20.29% and brightness of 35816 cd/m(2). To further demonstrate its potential in full-color display, the fabrication process for the QD layer was changed from spin-coating to EHD printing. The as-printed Teflon effectively blocked direct contact between the hole transport layer and the electron transport layer, thus preventing leakage currents. As a result, the device showed a resolution of 1692 PPI with a maximum EQE of 15.40%. To the best of our knowledge, these results represent the highest resolution and efficiency of pixelated QLEDs using inkjet printing or EHD printing, which demonstrates its huge potential in the application of high-resolution full-color displays.
Keyword ：
electrohydrodynamic printing electrohydrodynamic printing high performance high performance high resolution high resolution light-emitting diode light-emitting diode quantum dots quantum dots teflon teflon
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| GB/T 7714 | Yang, Kaiyu , Weng, Xukeng , Feng, Jiahuan et al. High-Resolution Quantum Dot Light-Emitting Diodes by Electrohydrodynamic Printing [J]. | ACS APPLIED MATERIALS & INTERFACES , 2024 , 16 (7) : 9544-9550 . |
| MLA | Yang, Kaiyu et al. "High-Resolution Quantum Dot Light-Emitting Diodes by Electrohydrodynamic Printing" . | ACS APPLIED MATERIALS & INTERFACES 16 . 7 (2024) : 9544-9550 . |
| APA | Yang, Kaiyu , Weng, Xukeng , Feng, Jiahuan , Yu, Yongshen , Xu, Baolin , Lin, Qiuxiang et al. High-Resolution Quantum Dot Light-Emitting Diodes by Electrohydrodynamic Printing . | ACS APPLIED MATERIALS & INTERFACES , 2024 , 16 (7) , 9544-9550 . |
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With the development of near-eye displays, the demands for display resolution and performance are increasing. Quantum dot performance is virtually independent of pixel size, making it an efficient way to display ultrahigh resolution. However, the low efficiency of high-resolution quantum dot devices has been an urgent technical bottleneck to be solved. Here, we constructed a dense single-molecule modification layer and a leakage current blocking layer for high-resolution devices using self-assembly, thereby realizing ultrahigh-resolution, high-efficiency, and stable high-resolution quantum dot light-emitting diodes (QLEDs). The peak external quantum efficiencies of the red devices are 24.68% (8759 PPI) and 19.54% (26075 PPI), respectively, with an exceptional long lifetime (T 95@1000 nit) up to 4871 h. In addition, we explored the feasibility of this modification strategy on non-Cd-based quantum dots. In conclusion, our strategy effectively improves the performance of high-resolution devices and provides a superior approach for realizing near-eye display applications.
Keyword ：
Light-emittingdevice Light-emittingdevice Quantum dots Quantum dots Self-assembly Self-assembly Single-molecular modificationlayer Single-molecular modificationlayer Ultrahighresolution Ultrahighresolution
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| GB/T 7714 | Zhong, Chao , Alsharafi, Rashed , Hu, Hailong et al. High-Performance, High-Resolution Quantum Dot Light-Emitting Diodes with Self-Assembly Single-Molecular Interface Modification [J]. | NANO LETTERS , 2024 , 24 (44) : 14125-14132 . |
| MLA | Zhong, Chao et al. "High-Performance, High-Resolution Quantum Dot Light-Emitting Diodes with Self-Assembly Single-Molecular Interface Modification" . | NANO LETTERS 24 . 44 (2024) : 14125-14132 . |
| APA | Zhong, Chao , Alsharafi, Rashed , Hu, Hailong , Yu, Kuibao , Yang, Kaiyu , Guo, Tailiang et al. High-Performance, High-Resolution Quantum Dot Light-Emitting Diodes with Self-Assembly Single-Molecular Interface Modification . | NANO LETTERS , 2024 , 24 (44) , 14125-14132 . |
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Perovskite light-emitting diodes (PeLEDs) have emerged as a prominent area of research in recent years, owing to their promising prospects for application in solid-state lighting and high-resolution displays. High performance has been achieved in the green and red emissions. However, blue PeLEDs, which are critical for display applications, are less efficient. The interfacial problem between the perovskite emission layer and the charge injection layer significantly hinders the device performance. Here, we introduced l-aspartic acid potassium (PLAK) into the hole injection layer, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The amino and carboxyl groups as well as potassium ions in the additive not only improved the wettability of PEDOT:PSS but also increased the nucleation sites at the interface, which simultaneously improved the film morphology and crystallinity, and fully passivated the bottom interface of the perovskite. In addition, the introduction of PLAK reduced the release of indium from ITO induced by acid PEDOT:PSS, thereby further inhibiting exciton quenching in the perovskite layer. Moreover, it achieved a better band alignment and successfully reduced the turn-on voltage of PeLEDs from 3.2 V to 2.9 V. Finally, the prepared blue PeLEDs emitted at 484 nm with the external quantum efficiency doubled from 3.23% to 6.98%. Our approach provides an effective strategy of buried interface engineering for improving the performance of blue PeLEDs. The synergistic effect of the doping strategy of basic amino acid salts at the interface enables the simultaneous modification of PEDOT:PSS and the bottom interface of the perovskite film to achieve efficient sky-blue PeLEDs.
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| GB/T 7714 | Yang, Kaiyu , Lin, Qiuxiang , Xu, Baolin et al. Synergistic interaction of multi-functional additives at the buried interface for efficient blue perovskite light-emitting diodes [J]. | JOURNAL OF MATERIALS CHEMISTRY C , 2024 , 12 (11) : 4123-4129 . |
| MLA | Yang, Kaiyu et al. "Synergistic interaction of multi-functional additives at the buried interface for efficient blue perovskite light-emitting diodes" . | JOURNAL OF MATERIALS CHEMISTRY C 12 . 11 (2024) : 4123-4129 . |
| APA | Yang, Kaiyu , Lin, Qiuxiang , Xu, Baolin , Yu, Yongshen , Hu, Hailong , Li, Fushan . Synergistic interaction of multi-functional additives at the buried interface for efficient blue perovskite light-emitting diodes . | JOURNAL OF MATERIALS CHEMISTRY C , 2024 , 12 (11) , 4123-4129 . |
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Significance The evolution of display technology is a cornerstone of modern technological advancement, fundamentally transforming how humans interact with machines. This transformation is vividly apparent in human-computer interactions, where the integration of sophisticated display technologies has led to more intuitive and immersive experiences. The global living standard improvement has further fueled expectations for advanced display devices, with consumers seeking higher quality, efficiency, and functionality. The advent of near-eye display technologies such as augmented reality (AR), mixed reality (MR), and virtual reality (VR) has only heightened the demands for high-resolution microdisplays. These emerging technologies require displays that provide not only high resolution but also compactness, energy efficiency, and the ability to reproduce colors accurately and vividly. The current market is dominated by micro-LED technology and recognized for its superior brightness and energy efficiency. However, the production of full-color micro-LEDs poses significant challenges, chiefly in the massive transfer of differently colored LED chips onto a single wafer. This process demands an exceptionally high yield rate, making it both technologically challenging and costly. As a new type of semiconductor nanocrystal materials with quantum confinement effects, quantum dots (QDs) have sparked great interest in the display field due to their unique properties such as tunable bandgaps, high quantum yields, high stability, and potential for cost-effective solution processing. QDs typically adopt a core- shell structure [Fig. 1(a)] and by adjusting the energy levels of the core-shell structure, excitons within the QDs can be confined. Organic ligands on the surface of QD shells provide steric hindrance among the dots, thus preventing aggregation and fluorescence quenching. The physicochemical properties of QDs can be adjusted by changing their organic ligands. Since Alivisatos's research team first reported LEDs with QDs as the electroluminescent layer in 1994, QD display devices have undergone 30 years of research. Additionally, high-resolution display devices using QDs have been realized via various patterning technologies to exhibit excellent device performance and fine pixel patterns. Although high-resolution patterning technology based on QDs has been extensively studied, there is still a lack of comprehensive reviews and summaries of recent work. Therefore, it is significant to summarize existing research and explore future development trends. Progress The current leading high-resolution QD patterning technologies encompass inkjet printing, photolithography, photo-crosslinking, region-selective deposition, transfer printing, and in-situ fabrication. These technologies are thoroughly compared and summarized in their process flows, strengths, and weaknesses, as depicted in Figs. 2, 6, and 8-12. In 2023, the team led by researcher Chen Zhuo from BOE Technology Group Co., Ltd. utilized electrospray inkjet printing for fabricating both bottom-emitting and top-emitting electroluminescent QD devices, achieving a resolution of 500 ppi. In 2020, the team of Xu Xiaoguang at BOE successfully created a 500 ppi full-color passive matrix QD light-emitting device by a sacrificial layer-assisted photolithography method. That same year, Moon Sung Kang and the team at Sogang University in the republic of Korea developed a method for patterning QDs with a photo-driven ligand crosslinking agent, successfully producing full- color QD patterns with a resolution of 1400 ppi. In 2021, Sun Xiaowei and the team at Southern University of Science and Technology achieved a large-area full-color QD thin film with 1000 ppi resolution via selective electrophoretic deposition. In 2019, Hu Binbin at Henan University reported on assembling QD nanoparticles into microstructures via wetting-induced deposition. In 2021, the team led by Chen Shuming at Southern University of Science and Technology built a resonant cavity in white light QD light-emitting devices to achieve full-color patterned QD devices and a QD film patterning resolution of 8465 ppi. In 2015, Taeghwan Hyeon and the team at the Institute for Basic Science in the republic of Korea realized QD light-emitting devices with a resolution of 2460 ppi using gravure transfer printing technology. In 2022, our team collaborated with the team of Qian Lei at the Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, integrated transfer printing with Langmuir-Blodgett film technology to create ultra-high pixel density QD light-emitting devices at 25400 ppi. In 2021, Zhong Haizheng and the team at the Beijing Institute of Technology prepared patterned CsPbI3 QD patterns on substrates via laser direct writing in situ. Conclusions and Prospects As carriers of visual information, display devices play an indispensable role in our daily lives. Emerging as revolutionary materials, QDs have become the ideal choice for next-generation display technologies with their unique properties such as tunable bandgaps, high quantum yields, and stability. Consequently, mastering high-resolution QD patterning is a crucial challenge that should be addressed for QD display devices to make significant strides in the market. In summary, various high-resolution QD patterning technologies require further detailed exploration to advance the applications and development of QD light-emitting devices in high-quality displays.
Keyword ：
display technology display technology high resolution high resolution patterning technology patterning technology quantum dot quantum dot
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| GB/T 7714 | Pan Youjiang , Lin Lihua , Yang Kaiyu et al. Patterning Technology of High-Resolution Quantum Dots [J]. | ACTA OPTICA SINICA , 2024 , 44 (2) . |
| MLA | Pan Youjiang et al. "Patterning Technology of High-Resolution Quantum Dots" . | ACTA OPTICA SINICA 44 . 2 (2024) . |
| APA | Pan Youjiang , Lin Lihua , Yang Kaiyu , Chen Wei , Hu Hailong , Guo Tailiang et al. Patterning Technology of High-Resolution Quantum Dots . | ACTA OPTICA SINICA , 2024 , 44 (2) . |
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由于量子点优异的材料特性，包括可调的能带间隙、高量子产率、高稳定性和可低成本地溶液加工等，其在显示领域引发了浓厚的兴趣和研究热潮。近年来，随着全世界对高质量显示的需求日益增长，特别是随着虚拟/增强现实（VR/AR）等近眼显示技术的兴起，对高亮度、高分辨率、高效率以及低功耗的显示技术提出了更高的要求。本文全面探讨了高分辨率量子点图案化技术，深入解析它们的工艺流程，并详细阐述它们在量子点显示器件中的各种应用。此外，还概述了高分辨率量子点图案化技术在实际应用中所面临的主要挑战。我们认为，要将高分辨率量子点图案化技术真正地应用到实际设备中，必须全面考虑各种因素，不仅包括从图案化技术出发，同时还涉及到从材料选择和器件结构设计等多个角度的深入思考和策划。本综述可为高分辨率量子点图案化技术行业的发展和研究提供有价值的参考。
Keyword ：
图案化技术 图案化技术 显示技术 显示技术 量子点 量子点 高分辨率 高分辨率
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| GB/T 7714 | 潘友江 , 林立华 , 杨开宇 et al. 高分辨率量子点图案化技术 [J]. | 光学学报 , 2024 , 44 (02) : 44-59 . |
| MLA | 潘友江 et al. "高分辨率量子点图案化技术" . | 光学学报 44 . 02 (2024) : 44-59 . |
| APA | 潘友江 , 林立华 , 杨开宇 , 陈伟 , 胡海龙 , 郭太良 et al. 高分辨率量子点图案化技术 . | 光学学报 , 2024 , 44 (02) , 44-59 . |
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Perovskite light-emitting diodes (PeLEDs) have attracted wide attention due to their excellent photoelectric properties. A variety of additives have been studied for perovskite emission layers to enhance the performance of PeLEDs. However, the buried interface, which also has significant influence on the crystallization kinetics and exciton recombination dynamics of the perovskite emission layer, remains to be explored. In this work, we introduced a new ionic liquid 1-Ethyl-3-methylimidazolium dicyanamide (EMIM DCA) with the characteristics of low viscosity and high conductivity into the interfacial layer between the hole transport layer (HTL) and the perovskite film. Due to the strong interaction between the EMIM DCA and perovskite, the crystallization of the perovskite film is obviously improved and the defects at the interface are well passivated. As a result, the nonradiative recombination in the interlayer is significantly reduced. In addition, the introduction of EMIM DCA promoted the injection of charge carriers, thus achieving a high luminance of 32310 cd m(-2) and enabling the maximum external quantum efficiency (EQE) of the PeLEDs increased from 10.2 % to 18.7 %.
Keyword ：
Buried interface Buried interface Ionic liquids Ionic liquids Light-emitting diodes Light-emitting diodes Perovskite Perovskite Q-2D Q-2D
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| GB/T 7714 | Yang, Kaiyu , Xu, Baolin , Lin, Qiuxiang et al. Interface engineering with ionic liquid for achieving efficient Quasi-2D perovskite light-emitting diodes [J]. | CHEMICAL ENGINEERING JOURNAL , 2024 , 483 . |
| MLA | Yang, Kaiyu et al. "Interface engineering with ionic liquid for achieving efficient Quasi-2D perovskite light-emitting diodes" . | CHEMICAL ENGINEERING JOURNAL 483 (2024) . |
| APA | Yang, Kaiyu , Xu, Baolin , Lin, Qiuxiang , Yu, Yongshen , Hu, Hailong , Li, Fushan . Interface engineering with ionic liquid for achieving efficient Quasi-2D perovskite light-emitting diodes . | CHEMICAL ENGINEERING JOURNAL , 2024 , 483 . |
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