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author:

Lv, Shanhong (Lv, Shanhong.) [1] | Yang, Kaiyu (Yang, Kaiyu.) [2] | Wu, Chaoxing (Wu, Chaoxing.) [3] | Wang, Kun (Wang, Kun.) [4] | Chen, Rong (Chen, Rong.) [5] | Chen, Xiang (Chen, Xiang.) [6] | Ju, Songman (Ju, Songman.) [7] | Luo, Zhiqi (Luo, Zhiqi.) [8] | Zhao, Haobing (Zhao, Haobing.) [9] | Guo, Tailiang (Guo, Tailiang.) [10] | Li, Fushan (Li, Fushan.) [11]

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EI

Abstract:

Nowadays, direct current-drive (DC-drive) is the mainstream method of driving electroluminescence (EL) devices such as quantum-dot light-emitting diodes (QLEDs). In contrast, alternating current-drive (AC-drive), as an alternative to DC-drive, has achieved lots of significant research results in recent years. And AC-drive is expected to reduce equipment manufacturing costs by reducing the use of power converters and rectifiers. However, our understanding of the light-emitting mechanism for QLED under AC-drive is still not thorough. In this work, the optoelectronic characteristics of QLED under different AC-driven frequencies are systematically studied and the equivalent circuit model is proposed by combining the experimental results with simulation results. Moreover, the working mechanism of the equivalent circuit and the carrier transport model are explained in detail, especially under high frequencies. This research helps us deepen our understanding of the working mechanism of QLEDs, broadens the application fields of AC-drive, and paves the way for the further use of AC-driven EL devices. 0741-3106 © 2021 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission. See https://www.ieee.org/publications/rights/index.html for more information.

Keyword:

AC motors Circuit simulation Electric impedance measurement Electric rectifiers Electroluminescence Equivalent circuits Light Nanocrystals Organic light emitting diodes (OLED) Rectifying circuits Semiconductor quantum dots Timing circuits

Community:

  • [ 1 ] [Lv, Shanhong]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 2 ] [Yang, Kaiyu]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 3 ] [Wu, Chaoxing]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 4 ] [Wang, Kun]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 5 ] [Chen, Rong]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 6 ] [Chen, Xiang]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 7 ] [Ju, Songman]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 8 ] [Luo, Zhiqi]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 9 ] [Zhao, Haobing]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 10 ] [Guo, Tailiang]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 11 ] [Li, Fushan]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China

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Source :

IEEE Electron Device Letters

ISSN: 0741-3106

Year: 2022

Issue: 2

Volume: 43

Page: 256-259

4 . 9

JCR@2022

4 . 1 0 0

JCR@2023

ESI HC Threshold:66

JCR Journal Grade:2

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 4

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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