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author:

Sun, Fan (Sun, Fan.) [1] | Chen, Guixiong (Chen, Guixiong.) [2] | Zhou, Xiongtu (Zhou, Xiongtu.) [3] | Wu, Chaoxing (Wu, Chaoxing.) [4] | Sun, Lei (Sun, Lei.) [5] | Yan, Qun (Yan, Qun.) [6] | Guo, Tailiang (Guo, Tailiang.) [7] | Zhang, Yongai (Zhang, Yongai.) [8]

Indexed by:

EI

Abstract:

Thin-film encapsulation (TFE) is essential and challenging for flexible organic/quantum dot light-emitting diodes (OLEDs/QLEDs). In this work, SiO2 nanoparticles were added into the NEA 121 polymer (s-NEA) to prolong the permeation pathways, showing good barrier property and high optical transparency. With increasing the concentration of SiO2 nanoparticles up to 20 mg/ml, the value of water vapor transmission rate (WVTR) decreased. A single s-NEA layer with silica concentration of 20 mg/ml and thickness of ~ 75 µm exhibited WVTR of 2.5 × 10−3 g/m2/day and light transmittance of above 80%. Al2O3 thin films fabricated using atomic layer deposition were inserted between s-NEA layers to form dyad-style Al2O3/s-NEA multilayers. The Al2O3 (60 nm)/s-NEA (20 µm) multilayers with 3 units exhibited WVTR of 2.6 × 10−5 g/m2/day and consistently demonstrated a significantly extended QLED lifetime. © 2019, Springer Science+Business Media, LLC, part of Springer Nature.

Keyword:

Alumina Aluminum oxide Atomic layer deposition Film preparation Multilayers Nanoparticles Organic light emitting diodes (OLED) Silica Silica nanoparticles Silicon SiO2 nanoparticles Vapor deposition

Community:

  • [ 1 ] [Sun, Fan]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 2 ] [Chen, Guixiong]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 3 ] [Zhou, Xiongtu]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 4 ] [Wu, Chaoxing]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 5 ] [Sun, Lei]Zhicheng College, Fuzhou University, Fuzhou; 350002, China
  • [ 6 ] [Yan, Qun]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 7 ] [Guo, Tailiang]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 8 ] [Zhang, Yongai]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China

Reprint 's Address:

  • [zhou, xiongtu]college of physics and information engineering, fuzhou university, fuzhou; 350108, china

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Source :

Journal of Materials Science: Materials in Electronics

ISSN: 0957-4522

Year: 2019

Issue: 24

Volume: 30

Page: 21089-21095

2 . 2 2

JCR@2019

2 . 8 0 0

JCR@2023

ESI HC Threshold:236

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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