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author:

Huang, Xiaowei (Huang, Xiaowei.) [1] | Lang, Taifu (Lang, Taifu.) [2] | Tang, Xuehuang (Tang, Xuehuang.) [3] | Xie, Yujie (Xie, Yujie.) [4] | Lin, Xin (Lin, Xin.) [5] | Yang, Yifan (Yang, Yifan.) [6] | Wang, Shuaishuai (Wang, Shuaishuai.) [7] | Zhou, Xiongtu (Zhou, Xiongtu.) [8] (Scholars:周雄图) | Zhang, Yongai (Zhang, Yongai.) [9] (Scholars:张永爱) | Sun, Jie (Sun, Jie.) [10] (Scholars:孙捷) | Lin, Chang (Lin, Chang.) [11] | Yan, Qun (Yan, Qun.) [12]

Indexed by:

EI Scopus SCIE

Abstract:

Micro-LEDs refer to light-emitting diodes with a size of less than 50 mu m, which have superior performances compared to Liquid Crystal Displays (LCDs) and Organic Light-Emitting Diodes (OLEDs). Micro-LEDs are expected to constitute the mainstream electronic display technology in the future. Nevertheless, micro-LED technology is still facing some technical difficulties. Especially, in mass transfer technology, the non-parallel problem between the temporary substrate holding the micro-LED chips and the target substrate seriously affects the bonding quality of the micro-LED chips. To solve this problem, this paper proposes a Polydimethylsiloxane (PDMS)-based flexible composite structure temporary substrate (carrier) doped with dimethyl silicone oil, which is capable of generating a deformation of 6 mu m under a pressure of 1 MPa and maintaining this property up to 250 degrees C. Utilizing this deformation property to cope with the non-parallel problem during the bonding process can significantly improve the bonding quality and yield of micro-LEDs. We placed 1600 (40 x 40) micro-LED chips of size 30 mu m x 15 mu m on the carrier with a chip pitch of 222 mu m. The carrier was heat-treated at 250 degrees C for 2 min as an adhesion reduction method. Under a bonding temperature of 180 degrees C and a bonding pressure of 0.3 MPa, bonding of the micro-LEDs with a 1.98-inch thin film transistor (TFT) was implemented using the carriers. A micro-LED green display with a PPI of 114 was successfully fabricated, with a display yield of 95.18 % and a brightness of 18,710 cd/m2. The method developed in this paper can overcome the key challenges of micro-LEDs mass transfer technology and pave the way for the industrialization of micro-LEDs.

Keyword:

Flip-chip bonding Indium bumps Micro-LED PDMS TFT

Community:

  • [ 1 ] [Huang, Xiaowei]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350100, Peoples R China
  • [ 2 ] [Lang, Taifu]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350100, Peoples R China
  • [ 3 ] [Tang, Xuehuang]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350100, Peoples R China
  • [ 4 ] [Xie, Yujie]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350100, Peoples R China
  • [ 5 ] [Lin, Xin]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350100, Peoples R China
  • [ 6 ] [Yang, Yifan]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350100, Peoples R China
  • [ 7 ] [Wang, Shuaishuai]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350100, Peoples R China
  • [ 8 ] [Zhou, Xiongtu]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350100, Peoples R China
  • [ 9 ] [Zhang, Yongai]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350100, Peoples R China
  • [ 10 ] [Sun, Jie]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350100, Peoples R China
  • [ 11 ] [Yan, Qun]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350100, Peoples R China
  • [ 12 ] [Huang, Xiaowei]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 13 ] [Lang, Taifu]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 14 ] [Tang, Xuehuang]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 15 ] [Xie, Yujie]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 16 ] [Lin, Xin]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 17 ] [Yang, Yifan]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 18 ] [Wang, Shuaishuai]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 19 ] [Zhou, Xiongtu]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 20 ] [Zhang, Yongai]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 21 ] [Sun, Jie]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 22 ] [Lin, Chang]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 23 ] [Yan, Qun]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 24 ] [Sun, Jie]Chalmers Univ Technol, Dept Microtechnol & Nanosci, Quantum Device Phys Lab, S-41296 Gothenburg, Sweden
  • [ 25 ] [Yan, Qun]Rich Sense Elect Technol Co Ltd, Quanzhou 362200, Peoples R China

Reprint 's Address:

  • 孙捷 严群

    [Sun, Jie]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350100, Peoples R China;;[Yan, Qun]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350100, Peoples R China;;[Sun, Jie]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China;;[Lin, Chang]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China;;[Yan, Qun]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China

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Source :

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

ISSN: 1369-8001

Year: 2024

Volume: 186

4 . 2 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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