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author:

Huang, Xiaowei (Huang, Xiaowei.) [1] | Lang, Taifu (Lang, Taifu.) [2] | Tang, Xuehuang (Tang, Xuehuang.) [3] | Xie, Yujie (Xie, Yujie.) [4] | Lin, Xin (Lin, Xin.) [5] | Yang, Yifan (Yang, Yifan.) [6] | Wang, Shuaishuai (Wang, Shuaishuai.) [7] | Zhou, Xiongtu (Zhou, Xiongtu.) [8] | Zhang, Yongai (Zhang, Yongai.) [9] | Sun, Jie (Sun, Jie.) [10] | Lin, Chang (Lin, Chang.) [11] | Yan, Qun (Yan, Qun.) [12]

Indexed by:

EI

Abstract:

Micro-LEDs refer to light-emitting diodes with a size of less than 50 μm, which have superior performances compared to Liquid Crystal Displays (LCDs) and Organic Light-Emitting Diodes (OLEDs). Micro-LEDs are expected to constitute the mainstream electronic display technology in the future. Nevertheless, micro-LED technology is still facing some technical difficulties. Especially, in mass transfer technology, the non-parallel problem between the temporary substrate holding the micro-LED chips and the target substrate seriously affects the bonding quality of the micro-LED chips. To solve this problem, this paper proposes a Polydimethylsiloxane (PDMS)-based flexible composite structure temporary substrate (carrier) doped with dimethyl silicone oil, which is capable of generating a deformation of 6 μm under a pressure of 1 MPa and maintaining this property up to 250 °C. Utilizing this deformation property to cope with the non-parallel problem during the bonding process can significantly improve the bonding quality and yield of micro-LEDs. We placed 1600 (40 × 40) micro-LED chips of size 30 μm × 15 μm on the carrier with a chip pitch of 222 μm. The carrier was heat-treated at 250 °C for 2 min as an adhesion reduction method. Under a bonding temperature of 180 °C and a bonding pressure of 0.3 MPa, bonding of the micro-LEDs with a 1.98-inch thin film transistor (TFT) was implemented using the carriers. A micro-LED green display with a PPI of 114 was successfully fabricated, with a display yield of 95.18 % and a brightness of 18,710 cd/m2. The method developed in this paper can overcome the key challenges of micro-LEDs mass transfer technology and pave the way for the industrialization of micro-LEDs. © 2024 Elsevier Ltd

Keyword:

Bonding Flexible displays Flip chip devices Indium alloys Liquid crystal displays Organic light emitting diodes (OLED) Plastic parts Polydimethylsiloxane Silicones Silicon wafers Stress relief

Community:

  • [ 1 ] [Huang, Xiaowei]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 2 ] [Lang, Taifu]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 3 ] [Tang, Xuehuang]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 4 ] [Xie, Yujie]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 5 ] [Lin, Xin]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 6 ] [Yang, Yifan]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 7 ] [Wang, Shuaishuai]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 8 ] [Zhou, Xiongtu]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 9 ] [Zhang, Yongai]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 10 ] [Sun, Jie]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 11 ] [Sun, Jie]Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg; 41296, Sweden
  • [ 12 ] [Lin, Chang]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 13 ] [Yan, Qun]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 14 ] [Yan, Qun]Rich Sense Electronics Technology Co., Ltd., Quanzhou; 362200, China

Reprint 's Address:

  • [sun, jie]national and local united engineering laboratory of flat panel display technology, fuzhou university, and fujian science & technology innovation laboratory for optoelectronic information of china, fuzhou; 350100, china;;[sun, jie]quantum device physics laboratory, department of microtechnology and nanoscience, chalmers university of technology, gothenburg; 41296, sweden;;

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Source :

Materials Science in Semiconductor Processing

ISSN: 1369-8001

Year: 2025

Volume: 186

4 . 2 0 0

JCR@2023

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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