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author：

Huang, X. (Huang, X..) [1] | Lang, T. (Lang, T..) [2] | Tang, X. (Tang, X..) [3] | Xie, Y. (Xie, Y..) [4] | Lin, X. (Lin, X..) [5] | Yang, Y. (Yang, Y..) [6] | Wang, S. (Wang, S..) [7] | Zhou, X. (Zhou, X..) [8] | Zhang, Y. (Zhang, Y..) [9] | Sun, J. (Sun, J..) [10] | Lin, C. (Lin, C..) [11] | Yan, Q. (Yan, Q..) [12]

Indexed by：

Scopus

Abstract：

Micro-LEDs　refer　to　light-emitting　diodes　with　a　size　of　less　than　50　μm,　which　have　superior　performances　compared　to　Liquid　Crystal　Displays　(LCDs)　and　Organic　Light-Emitting　Diodes　(OLEDs).　Micro-LEDs　are　expected　to　constitute　the　mainstream　electronic　display　technology　in　the　future.　Nevertheless,　micro-LED　technology　is　still　facing　some　technical　difficulties.　Especially,　in　mass　transfer　technology,　the　non-parallel　problem　between　the　temporary　substrate　holding　the　micro-LED　chips　and　the　target　substrate　seriously　affects　the　bonding　quality　of　the　micro-LED　chips.　To　solve　this　problem,　this　paper　proposes　a　Polydimethylsiloxane　(PDMS)-based　flexible　composite　structure　temporary　substrate　(carrier)　doped　with　dimethyl　silicone　oil,　which　is　capable　of　generating　a　deformation　of　6　μm　under　a　pressure　of　1　MPa　and　maintaining　this　property　up　to　250　°C.　Utilizing　this　deformation　property　to　cope　with　the　non-parallel　problem　during　the　bonding　process　can　significantly　improve　the　bonding　quality　and　yield　of　micro-LEDs.　We　placed　1600　(40　×　40)　micro-LED　chips　of　size　30　μm　×　15　μm　on　the　carrier　with　a　chip　pitch　of　222　μm.　The　carrier　was　heat-treated　at　250　°C　for　2　min　as　an　adhesion　reduction　method.　Under　a　bonding　temperature　of　180　°C　and　a　bonding　pressure　of　0.3　MPa,　bonding　of　the　micro-LEDs　with　a　1.98-inch　thin　film　transistor　(TFT)　was　implemented　using　the　carriers.　A　micro-LED　green　display　with　a　PPI　of　114　was　successfully　fabricated,　with　a　display　yield　of　95.18　%　and　a　brightness　of　18,710　cd/m2.　The　method　developed　in　this　paper　can　overcome　the　key　challenges　of　micro-LEDs　mass　transfer　technology　and　pave　the　way　for　the　industrialization　of　micro-LEDs.　©　2024　Elsevier　Ltd

Keyword：

Flip-chip bonding Indium bumps Micro-LED PDMS TFT

Community：

  • [ 1 ] [Huang X.]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 2 ] [Huang X.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 3 ] [Lang T.]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 4 ] [Lang T.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 5 ] [Tang X.]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 6 ] [Tang X.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 7 ] [Xie Y.]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 8 ] [Xie Y.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 9 ] [Lin X.]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 10 ] [Lin X.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 11 ] [Yang Y.]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 12 ] [Yang Y.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 13 ] [Wang S.]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 14 ] [Wang S.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 15 ] [Zhou X.]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 16 ] [Zhou X.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 17 ] [Zhang Y.]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 18 ] [Zhang Y.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 19 ] [Sun J.]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 20 ] [Sun J.]Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, 41296, Sweden
  • [ 21 ] [Sun J.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 22 ] [Lin C.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 23 ] [Yan Q.]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 24 ] [Yan Q.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 25 ] [Yan Q.]Rich Sense Electronics Technology Co., Ltd., Quanzhou, 362200, China

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Source ：

Materials Science in Semiconductor Processing

ISSN： 1369-8001

Year： 2025

Volume： 186

4 . 2 0 0

JCR@2023

CAS Journal Grade：2

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ESI Highly Cited Papers on the List： 0 Unfold All

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