The　pixelation　of　Micro-LED　still　faces　intractable　technological　problems　with　the　shrinkage　of　pixel　by　using　conventional　mesa　etching　processes,　such　as　reduced　luminous　efficiency　and　tough　metal　interconnection.　In　this　work,　a　novel　pixelation　strategy　using　fluorine　(F)　ion　implantation　with　tailored　injection　energy　and　dose　has　been　proposed　and　investigated　through　simulation　and　experiment.　It　is　found　that　both　the　injection　depth　and　spatial　distribution　range　are　determined　by　injection　energy.　The　lateral　spreading　of　the　F　ions　could　be　effectively　suppressed　by　decreasing　injection　energy　and　increasing　dose　while　achieving　equal　electrical　isolation.　Furthermore,　the　uniformity　of　lateral　spreading　could　be　improved　by　introducing　multi-energy　injections.　For　verification　and　demonstration,　Micro-LED　arrays　with　fixed　pitch　and　various　pixel　sizes　were　fabricated　by　F　ion　implantation,　both　photoluminescence　and　electroluminescence　characteristics　show　that　the　pixel　contrast　and　uniformity　are　well　maintained　even　for　the　Micro-LED　array　with　pixel　size　of　10　mu　m.　For　Micro-LED　array　with　pitch　and　pixel　sizes　of　40　mu　m　and　10　mu　m,　the　reverse　leakage　currents　at　a　reverse　bias　voltage　of　-5　V　is　1.45　x　10-7　A,　which　is　lower　than　that　formed　by　conventional　bench　top　etching.　The　pixelation　method　by　fluorine　ion　implantation　with　tailored　injection　energy　and　dose　is　expected　to　be　able　to　pave　the　way　toward　high-performance　Micro-LED　and　Nano-LED　displays.