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author:

Li, Wenhao (Li, Wenhao.) [1] | Wang, Kun (Wang, Kun.) [2] | Li, Junlong (Li, Junlong.) [3] | Wu, Chaoxing (Wu, Chaoxing.) [4] (Scholars:吴朝兴) | Zhang, Yongai (Zhang, Yongai.) [5] (Scholars:张永爱) | Zhou, Xiongtu (Zhou, Xiongtu.) [6] (Scholars:周雄图) | Guo, Tailiang (Guo, Tailiang.) [7] (Scholars:郭太良)

Indexed by:

SCIE

Abstract:

Non-electrical contact and non-carrier injection (NEC&NCI) mode is an emerging driving mode for nanoscale light-emitting diodes (LEDs), aiming for applications in nano-pixel light-emitting displays (NLEDs). However, the working mechanism of nano-LED operating in NEC&NCI mode is not clear yet. In particular, the questions comes down to how the inherent holes and electrons in the LED can support sufficient radiation recombination, which lacks a direct physical picture. In this work, a finite element simulation was used to study the working process of the nano-LED operating in the NEC&NCI mode to explore the working mechanisms. The energy band variation, carrier concentration redistribution, emission rate, emission spectrum, and current-voltage characteristics are studied. Moreover, the effect of the thickness of insulating layer that plays a key role on device performance is demonstrated. We believe this work can provide simulation guidance for a follow-up study of NEC&NCI-LED.

Keyword:

alternating current nano-LED non-carrier injection simulation working mechanism

Community:

  • [ 1 ] [Li, Wenhao]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 2 ] [Wang, Kun]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 3 ] [Li, Junlong]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 4 ] [Wu, Chaoxing]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 5 ] [Zhang, Yongai]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 6 ] [Zhou, Xiongtu]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 7 ] [Guo, Tailiang]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 8 ] [Wu, Chaoxing]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Peoples R China
  • [ 9 ] [Zhang, Yongai]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Peoples R China
  • [ 10 ] [Zhou, Xiongtu]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Peoples R China
  • [ 11 ] [Guo, Tailiang]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Peoples R China

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Source :

NANOMATERIALS

ISSN: 2079-4991

Year: 2022

Issue: 6

Volume: 12

5 . 3

JCR@2022

4 . 4 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:91

JCR Journal Grade:1

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 21

SCOPUS Cited Count: 25

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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