Non-electrical　contact　and　non-carrier　injection　(NEC&NCI)　mode　is　an　emerging　driving　mode　for　nanoscale　light-emitting　diodes　(LEDs),　aiming　for　applications　in　nano-pixel　light-emitting　displays　(NLEDs).　However,　the　working　mechanism　of　nano-LED　operating　in　NEC&NCI　mode　is　not　clear　yet.　In　particular,　the　questions　comes　down　to　how　the　inherent　holes　and　electrons　in　the　LED　can　support　sufficient　radiation　recombination,　which　lacks　a　direct　physical　picture.　In　this　work,　a　finite　element　simulation　was　used　to　study　the　working　process　of　the　nano-LED　operating　in　the　NEC&NCI　mode　to　explore　the　working　mechanisms.　The　energy　band　variation,　carrier　concentration　redistribution,　emission　rate,　emission　spectrum,　and　current-voltage　characteristics　are　studied.　Moreover,　the　effect　of　the　thickness　of　insulating　layer　that　plays　a　key　role　on　device　performance　is　demonstrated.　We　believe　this　work　can　provide　simulation　guidance　for　a　follow-up　study　of　NEC&NCI-LED.