author：
Du, Zaifa
(Du, Zaifa.)
[1]
|
Li, Dianlun
(Li, Dianlun.)
[2]
|
Guo, Weiling
(Guo, Weiling.)
[3]
|
Xiong, Fangzhu
(Xiong, Fangzhu.)
[4]
|
Tang, Penghao
(Tang, Penghao.)
[5]
|
Zhou, Xiongtu
(Zhou, Xiongtu.)
[6]
|
Zhang, Yongai
(Zhang, Yongai.)
[7]
|
Guo, Tailiang
(Guo, Tailiang.)
[8]
|
Yan, Qun
(Yan, Qun.)
[9]
|
Sun, Jie
(Sun, Jie.)
[10]
Unfold
Abstract：
The quantum dot (QD) color-conversion efficiency (CCE) in GaN micro-light-emitting diodes ( \mu LEDs) is greatly improved by non-radiative energy transfer (NRET) mechanism. An array of deep nano-holes with a diameter of about 1\mu \text{m} was fabricated in \mu LED mesas ( 40\times 60\,\,\mu \text{m} {2} ) by nanoimprint lithography. The nano-holes were etched straight through the \mu LED active region to ensure that the filled QDs were in extremely close contact with the active region. The absorption efficiency and emission efficiency of QDs are effectively improved by NRET, resulting in a superhigh CCE in QD- \mu LED hybrid devices. Compared to \mu LED devices with conventional spin-coated QDs, the CCE of novel nano-hole \mu LEDs with filled QDs has been enhanced by about 118%. © 1980-2012 IEEE.
Keyword：
Conversion efficiency
Energy transfer
Gallium nitride
III-V semiconductors
Nanocrystals
Nanoimprint lithography
Organic light emitting diodes (OLED)
Quantum efficiency
Semiconductor quantum dots
Classification
525.5 Energy Conversion Issues - 714.2 Semiconductor Devices and Integrated Circuits - 761 Nanotechnology - 931.4 Quantum Theory; Quantum Mechanics - 933 Solid State Physics
Type
Manuscript received April 22, 2021; revised May 21, 2021; accepted June 13, 2021. Date of publication June 15, 2021; date of current version July 26, 2021. This work was supported in part by the Mindu Innovation Laboratory and in part by the National Key Research and Development Program of China under Grant 2018YFA0209004. The review of this letter was arranged by Editor Z. Ma. (Zaifa Du and Dianlun Li contributed equally to this work.) (Corresponding author: Jie Sun.) Zaifa Du, Weiling Guo, Fangzhu Xiong, and Penghao Tang are with the Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Beijing 100124, China.
Access Number
EI:20213110718845
