Fabrication of hybrid bi-stable device based on CdSe quantum dots/poly(N-vinylecarbasole) composite and its carrier transport - Details

author：

Indexed by：

EI Scopus PKU CSCD

Abstract：

A　novel　type　of　the　organic/inorganic　hybrid　bi-stable　device　has　been　successfully　fabricated　with　the　CdSe　quantum　dots　(QDs)　embedded　in　poly(N-vinylecarbasole)　(PVK)　as　the　nano-composite　material.　In　the　newly-developed　device,　the　reversible　transition　between　the　high　and　low　resistance　states,　corresponding　to　the　write　and　erase　processes　of　a　digital　memory　device,　can　be　realized　at　room　temperature　by　applying　a　positive　and/or　negative　pulsed　bias.　Moreover,　the　device　has　survived　the　high　repetition　of　read-erase-read-write　tests.　The　current-voltage　and　capacitance-voltage　characteristics　of　the　device　were　evaluated　to　understand　the　possible　mechanisms　responsible　for　the　capture　and　release　of　the　carriers　in　reversible　transitions.

Keyword：

Cadmium alloys Cadmium compounds Carrier transport Semiconductor quantum dots

Community：

[ 1 ] [Xie, Jianxing]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
[ 2 ] [Li, Fushan]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
[ 3 ] [Xin, Qi]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
[ 4 ] [Wu, Chaoxing]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
[ 5 ] [Zhang, Yongzhi]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
[ 6 ] [Zhang, Beibei]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
[ 7 ] [Xu, Sheng]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
[ 8 ] [Guo, Tailiang]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China