A　novel　type　of　the　organic/inorganic　hybrid　bi-stable　device　has　been　successfully　fabricated　with　the　CdSe　quantum　dots　(QDs)　embedded　in　poly(N-vinylecarbasole)　(PVK)　as　the　nano-composite　material.　In　the　newly-developed　device,　the　reversible　transition　between　the　high　and　low　resistance　states,　corresponding　to　the　write　and　erase　processes　of　a　digital　memory　device,　can　be　realized　at　room　temperature　by　applying　a　positive　and/or　negative　pulsed　bias.　Moreover,　the　device　has　survived　the　high　repetition　of　read-erase-read-write　tests.　The　current-voltage　and　capacitance-voltage　characteristics　of　the　device　were　evaluated　to　understand　the　possible　mechanisms　responsible　for　the　capture　and　release　of　the　carriers　in　reversible　transitions.