Nonvolatile　memory　devices　based　on　hybrid　inorganic/organic　nanocomposites　have　emerged　as　excellent　candidates　for　promising　applications　in　next-generation　electronic　and　optoelectronic　devices.　Among　the　various　types　of　nonvolatile　memory　devices,　organic　bistable　devices　fabricated　utilizing　hybrid　organic/inorganic　nanocomposites　have　currently　been　receiving　broad　attention　because　of　their　excellent　performance　with　high-mechanical　flexibility,　simple　fabrication　and　low　cost.　The　prospect　of　potential　applications　of　nonvolatile　memory　devices　fabricated　utilizing　hybrid　nanocomposites　has　led　to　substantial　research　and　development　efforts　to　form　various　kinds　of　nanocomposites　by　using　various　methods.　Generally,　hybrid　inorganic/organic　nanocomposites　are　composed　of　organic　layers　containing　metal　nanoparticles,　semiconductor　quantum　dots　(QDs),　core-shell　semiconductor　QDs,　fullerenes,　carbon　nanotubes,　graphene　molecules　or　graphene　oxides　(GOs).　This　review　article　describes　investigations　of　and　developments　in　nonvolatile　memory　devices　based　on　hybrid　inorganic/organic　nanocomposites　over　the　past　5　years.　The　device　structure,　fabrication　and　electrical　characteristics　of　nonvolatile　memory　devices　are　discussed,　and　the　switching　and　carrier　transport　mechanisms　in　the　hybrid　nonvolatile　memory　devices　are　reviewed.　Furthermore,　various　flexible　memory　devices　fabricated　utilizing　hybrid　nanocomposites　are　described　and　their　future　prospects　are　discussed.　NPG　Asia　Materials　(2012)　4,　e18;　doi:　10.1038/am.2012.32;　published　online　8　June　2012