Charge　transport　in　a　multilayer　hybrid　electroluminescence　(EL)　device　containing　CdSe/ZnS　quantum　dots　(QDs)　embedded　in　hole-transporting　poly(N-vinylcarbozole)　(PVK)　layer　was　investigated.　The　current-voltage　(I-V)　curve　exhibited　resistive　transition　at　low　bias　voltage　and　a　negative　differential　resistance　region　with　increase　in　bias　voltage,　which　can　be　explained　in　terms　of　a　two-step　charge　transport　process,　i.e.,　holes　trapping　and　the　following　hole-electron　recombination　in　CdSe/ZnS　QDs　embedded　in　PVK　layer.　EL　spectra　showed　that　the　recombination　center　would　be　restricted　to　CdSe/ZnS　QDs　at　high　bias　voltage,　which　is　in　well　agreement　with　the　I-V　results.　(C)　2010　American　Institute　of　Physics.　[doi:10.1063/1.3479528]