Field　emission　electron　source　based　on　planar-gate　triode　with　ZnO　emitters　were　fabricated　by　conventional　photolithography　and　hydrothermal　method.　The　optical　microscopy,　X-ray　diffraction　(XRD)　and　scanning　electron　microscopy　(SEM)　were　employed　to　characterize　the　microstructures　and　morphologies　of　the　as-grown　samples　and　the　growth　mechanism　was　discussed.　Its　field　emission　characteristics　were　also　investigated.　The　experimental　results　show　that　the　average　diameter　of　ZnO　nanorods　with　hexagonal　wurtzite　structure　was　approximately　300　nm　and　ZnO　emitters　are　synthesized　on　the　cathode　of　planar-gate　triode.　The　field　emission　measurements　show　that　the　emission　properties　of　electron　source　based　on　planar-gate　triode　with　ZnO　emitters　are　completely　modulated　by　gate　voltage.　The　turn-on　voltage　was　around　150　V　and　anode　current　can　reach　to　345　μA　when　anode　voltage　and　gate　voltage　was　set　to　2　000　and　275　V,　respectively.　The　emission　current　fluctuation　was　approximately　±5.5%　for　400　min　and　luminous　brightness　can　come　to　750　cd/m2at　the　gate　voltage　of　260　V,　indicating　that　the　fabricated　device　have　a　good　emission　performance.　©　2015,　Chongqing　Functional　Materials　Periodical　Press　Co.　Ltd.　All　right　reserved.