Hybrid　perovskite　CH3NH3PbI3　has　attracted　extensive　research　interests　in　optoelectronic　devices　in　recent　years.　Herein　an　inkjet　printing　method　has　been　employed　to　deposit　a　perovskite　CH3NH3PbI3　layer.　By　choosing　the　proper　solvent　and　controlling　the　crystal　growth　rate,　hybrid　perovskite　CH3NH3PbI3　nanowires,　microwires,　a　network,　and　islands　were　synthesized　by　means　of　inkjet　printing.　Electrode-gap-electrode　lateral-structured　photodetectors　were　fabricated　with　these　different　crystals,　of　which　a　hybrid　perovskite　microwire-based　photodetector　would　balance　the　uniformity　and　low　defects　to　obtain　a　switching　ratio　of　16000%,　responsivity　of　1.2　A/W,　and　normalized　detectivity　of　2.39　x　10(12)　Jones　at　a　light　power　density　of　0.1　mW/cm(2).　Furthermore,　the　hybrid　perovskite　microwire-based　photodetector　arrays　were　fabricated　and　applied　in　an　imaging　sensor,　from　which　the　clear　mapping　of　the　light　source　signal　was　successfully　obtained.　This　work　paves　the　way　for　the　realization　of　low-cost,　solution-processed,　and　high-performance　hybrid　perovskite-based　photodetector　arrays.