In　this　letter,　high-performance　amorphous　indium-gallium-zinc-oxide　(a-InGaZnO)　and　indiumtin-oxide(ITO)　nanowire　(NW)　composite　thin-film　transistors　(TFTs)　are　fabricated　via　a　sol-gel　approach.　By　incorporating　0.5　wt%　ITO　NWs　into　the　a-InGaZnO　thin　film,　the　composite　TFTs　can　achieve　an　enhanced　field-effect　mobility　of　76.5　cm(2)/V.s　and　a　high　current　density　of　73.3　mu　A/mu　m　with　10-mu　m　channel　length.　The　low-frequency　noise　(LFN)　characteristic　of　the　composite　TFTs　fits　the　classical　1/f　noise　model　very　well　in　the　frequency　range　1　to　1000　Hz.　The　subthreshold　slope　and　LFN　results　provide　an　alternative　explanation　to　the　enhanced　performance　of　the　composite　TFTs　due　to　the　decreased　interfacial　trap　density.　The　a-InGaZnO/ITO　NW　composite　TFTs　are　one　of　the　promising　candidates　for　the　development　of　high-speed　low-cost　electronics.