Metal-oxide-semiconductors　(MOS)　have　become　an　ideal　candidate　for　the　next-generation　optoelectronic　device　applications.　However,　high　processing　temperature　and　complicate　processes　are　still　tremendous　challenge　in　developing　solution-based　complementary　MOS　(CMOS)　inverter.　In　this　article,　for　the　first　time,　femtosecond　(fs)　laser　was　used　to　realize　controllable　annealing　for　solution-based　CMOS　inverter.　The　achievement　of　nonstoichiometric　p-type　oxide　thin　films　was　ascribed　to　the　photo-assisted　conversion　of　precursor　to　metal-oxide　(M-O)　lattices　along　with　the　formation　of　atom　vacancies　in　oxide　lattice　due　to　carrier　excitation　and　relaxation　using　laser　annealing　(LA).　The　field　effect　mobility　of　the　p-　and　n-type　M-O　thin-film　transistors　(TFTs)　with　inkjet　printing　(IJP)　and　LA　was　0.91　and　7.07　cm(2)/V.s,　respectively.　Moreover,　location　control　capacity　was　exploited　to　separately　anneal　the　p-　and　n-type　oxide　deposited　with　IJP　for　the　fabrication　of　TFTs,　which　significantly　simplified　the　fabrication　process　of　the　inverter.　CMOS　inverter　with　high　noise　margin　and　moderate　voltage　gain　above　10　was　also　obtained.　Our　work　significantly　improved　the　ability　to　selectively　manipulate　the　functionality　and　properties　of　the　irradiated　materials.　The　results　demonstrated　that　logic　gates　based　on　all-oxide　can　be　large　area　integrated　using　our　strategy,　exhibiting　attractive　properties　and　applications　of　the　CMOS　integrated　circuits　in　oxide　electronics.