High-performance　thin-film　transistors　(TFTs)　were　obtained　by　incorporating　small　amount　of　tungsten　(W)　into　amorphous　indium　zinc　oxide　(IZO)-based　thin　films　via　a　solution　process.　Compared　with　original　IZO　TFTs,　0.2-wt%　W-doped　IZO　TFTs　exhibit　improved　bias　stress　stability　and　field-effect　mobility　of　30.5　cm(2)/V　center　dot　s.　Meanwhile,　the　bias　stress　stability　of　IZO　TFTs　can　be　further　enhanced　with　0.5-wt%　W-doping.　The　pulsed　currentvoltage　(I-V)　method　is　employed　to　study　the　hysteresis　and　charging　behavior　of　theW-doped　IZO　TFTs.　The　X-ray　photoelectron　spectroscopy　analysis　and　the　pulsed　I-V　measurement　results　suggest　that　these　desirable　performances　could　be　attributed　to　the　suppression　of　excessive　oxygen　vacancies　and　improved　interface　quality　because　ofW-doping.　The　results　represent　an　effective　strategy　to　achieve　high-performance　solution-processed　amorphous　oxide-based　TFTs　with　desirable　stability　byW-doping.