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author:

Qiu, Xincan (Qiu, Xincan.) [1] | Liu, Yu (Liu, Yu.) [2] | Xia, Jiangnan (Xia, Jiangnan.) [3] | Guo, Jing (Guo, Jing.) [4] | Chen, Ping-An (Chen, Ping-An.) [5] | Wei, Huan (Wei, Huan.) [6] | Shi, Xiaosong (Shi, Xiaosong.) [7] | Chen, Chen (Chen, Chen.) [8] | Zeng, Zebing (Zeng, Zebing.) [9] | Chen, Huipeng (Chen, Huipeng.) [10] (Scholars:陈惠鹏) | Jiang, Lang (Jiang, Lang.) [11] | Liao, Lei (Liao, Lei.) [12] | Hu, Yuanyuan (Hu, Yuanyuan.) [13]

Indexed by:

Scopus SCIE

Abstract:

2D lead halide perovskites (LHPs) are highly attractive for fabrication of thin-film transistors (TFTs) due to their promising charge transport properties, mitigated ion migration effect, and high stability. However, thus far there have been no reports of 2D LHP TFTs that can operate well at room temperature. Herein, we report a simple device fabrica-tion strategy for 2D LHP TFTs. 2D LHP TFTs are successfully obtained via a low-temperature solution process, and they show mobility ap-proaching 10-2 cm2 V-1 s-1and an on/off ratio of about 104 with negli-gible hysteresis at room temperature. Moreover, the devices feature high bias-stress stability and storage stability. Additionally, large -area TFT arrays show a high degree of uniformity in device performance and exhibit capability for photodetection imaging. This study provides solutions to address the challenges in device fabrication of 2D LHP TFTs and demonstrate their potential for practical applications.

Keyword:

Community:

  • [ 1 ] [Qiu, Xincan]Hunan Univ, Sch Phys & Elect, Key Lab Micro Nano Optoelect Devices, Minist Educ, Changsha 410082, Peoples R China
  • [ 2 ] [Liu, Yu]Hunan Univ, Sch Phys & Elect, Key Lab Micro Nano Optoelect Devices, Minist Educ, Changsha 410082, Peoples R China
  • [ 3 ] [Xia, Jiangnan]Hunan Univ, Sch Phys & Elect, Key Lab Micro Nano Optoelect Devices, Minist Educ, Changsha 410082, Peoples R China
  • [ 4 ] [Hu, Yuanyuan]Hunan Univ, Sch Phys & Elect, Key Lab Micro Nano Optoelect Devices, Minist Educ, Changsha 410082, Peoples R China
  • [ 5 ] [Qiu, Xincan]Shenzhen Res Inst Hunan Univ, Shenzhen 518063, Peoples R China
  • [ 6 ] [Hu, Yuanyuan]Shenzhen Res Inst Hunan Univ, Shenzhen 518063, Peoples R China
  • [ 7 ] [Qiu, Xincan]Hunan Univ, Coll Semicond, Coll Integrated Circuits, Int Sci & Technol Innovat Cooperat Base Adv Displa, Changsha 410082, Peoples R China
  • [ 8 ] [Liao, Lei]Hunan Univ, Coll Semicond, Coll Integrated Circuits, Int Sci & Technol Innovat Cooperat Base Adv Displa, Changsha 410082, Peoples R China
  • [ 9 ] [Hu, Yuanyuan]Hunan Univ, Coll Semicond, Coll Integrated Circuits, Int Sci & Technol Innovat Cooperat Base Adv Displa, Changsha 410082, Peoples R China
  • [ 10 ] [Guo, Jing]Hunan Univ, Coll Chem & Chem Engn, State Key Lab Chemo Biosensing & Chemometr, Changsha 410082, Peoples R China
  • [ 11 ] [Zeng, Zebing]Hunan Univ, Coll Chem & Chem Engn, State Key Lab Chemo Biosensing & Chemometr, Changsha 410082, Peoples R China
  • [ 12 ] [Chen, Chen]Natl Univ Def Technol, Coll Aerosp Sci & Engn, Sci & Technol Adv Ceram Fibers & Composites Lab, Changsha 410000, Peoples R China
  • [ 13 ] [Chen, Huipeng]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350002, Peoples R China
  • [ 14 ] [Shi, Xiaosong]Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Beijing 100190, Peoples R China
  • [ 15 ] [Jiang, Lang]Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Beijing 100190, Peoples R China

Reprint 's Address:

  • [Hu, Yuanyuan]Hunan Univ, Sch Phys & Elect, Key Lab Micro Nano Optoelect Devices, Minist Educ, Changsha 410082, Peoples R China;;[Hu, Yuanyuan]Shenzhen Res Inst Hunan Univ, Shenzhen 518063, Peoples R China;;[Hu, Yuanyuan]Hunan Univ, Coll Semicond, Coll Integrated Circuits, Int Sci & Technol Innovat Cooperat Base Adv Displa, Changsha 410082, Peoples R China;;

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Source :

CELL REPORTS PHYSICAL SCIENCE

ISSN: 2666-3864

Year: 2023

Issue: 1

Volume: 4

7 . 9

JCR@2023

7 . 9 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:49

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 7

SCOPUS Cited Count: 6

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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