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author:

Wu, Yan (Wu, Yan.) [1] | Chen, Shiyao (Chen, Shiyao.) [2] | Weng, Yalian (Weng, Yalian.) [3] | Zhang, Yongai (Zhang, Yongai.) [4] (Scholars:张永爱) | Wu, Chaoxing (Wu, Chaoxing.) [5] (Scholars:吴朝兴) | Sun, Lei (Sun, Lei.) [6] (Scholars:孙磊) | Zhang, Sangling (Zhang, Sangling.) [7] | Yan, Qun (Yan, Qun.) [8] | Guo, Tailiang (Guo, Tailiang.) [9] (Scholars:郭太良) | Zhou, Xiongtu (Zhou, Xiongtu.) [10] (Scholars:周雄图)

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EI Scopus SCIE

Abstract:

A facile growth-doping method in aqueous solution has been developed to synthesize Cu-doped ZnSe (ZnSe:Cu) QDs by using thioglycolic acid (TGA) as a stabilizer. The effects of the Cu doping concentration, reaction temperature and pH value on the synthesis of ZnSe:Cu QDs were investigated systematically. The as-synthesized ZnSe:Cu QDs with an excellent green emission still belong to a cubic zinc blende crystalline structure, and the average particle size is approximately 3.0 nm. The photoluminescent quantum yield (PLQY) is as high as 20%, and the exciton radiative lifetime is approximately 113.8 ns. Moreover, the patterned ZnSe:Cu QDs thin films have been successfully fabricated by using an inkjet printing method to verify the ability of the potential application to the color conversion. With the assistance of 5.5 pair distributed bragg reflector (DBR) structures, the color coordinate of the ZnSe:Cu QDs thin film excited by the blue LEDs is located at (0.2182, 0.4352) and the intensity of PL peak located at 513 nm reaches to be 45.1%. In addition, the PLQY of color conversion-based ZnSe:Cu QDs thin film is approximately 9.64%. Based on these results, ZnSe:Cu QDs are potentially useful for the fabrication of optoelectronic devices, especially QDs photoluminescence and electroluminescence.

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Community:

  • [ 1 ] [Wu, Yan]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 2 ] [Chen, Shiyao]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 3 ] [Weng, Yalian]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 4 ] [Zhang, Yongai]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 5 ] [Wu, Chaoxing]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 6 ] [Zhang, Sangling]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 7 ] [Yan, Qun]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 8 ] [Guo, Tailiang]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 9 ] [Zhou, Xiongtu]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 10 ] [Sun, Lei]Fuzhou Univ, Zhicheng Coll, Fuzhou 350002, Fujian, Peoples R China

Reprint 's Address:

  • 张永爱 周雄图

    [Zhang, Yongai]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China;;[Zhou, Xiongtu]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350108, Fujian, Peoples R China

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Source :

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

ISSN: 0957-4522

Year: 2019

Issue: 24

Volume: 30

Page: 21406-21415

2 . 2 2

JCR@2019

2 . 8 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:236

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 16

SCOPUS Cited Count: 12

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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