• Complex
  • Title
  • Keyword
  • Abstract
  • Scholars
  • Journal
  • ISSN
  • Conference
成果搜索

author:

Ma, Fumin (Ma, Fumin.) [1] | Xu, Zhongwei (Xu, Zhongwei.) [2] (Scholars:徐中炜) | Liu, Yang (Liu, Yang.) [3] | Zheng, Yueting (Zheng, Yueting.) [4] | Chen, Wei (Chen, Wei.) [5] (Scholars:陈伟) | Hu, Hailong (Hu, Hailong.) [6] (Scholars:胡海龙) | Guo, Tailiang (Guo, Tailiang.) [7] (Scholars:郭太良) | Li, Fushan (Li, Fushan.) [8] (Scholars:李福山) | Wu, Chaoxing (Wu, Chaoxing.) [9] | Kim, Tae Whan (Kim, Tae Whan.) [10]

Indexed by:

EI Scopus SCIE

Abstract:

Simulating synaptic function and building brain-inspired computers have received widespread attention. The memristor is considered to be an electronic version of the synapse and an excellent element for creating a brand-new artificial intelligence system in the future. However, most memristor-based electronic synapses currently exhibit low stability due to complex resistance switching processes. Based on a controllable in-situ formation strategy that we were able to employ with atomic layer deposition, we fabricated electronic synapses based on Au@Al2O3 core-shell nanoparticles. Our device exhibited extremely reliable, stable, and durable performance and showed a capability to emulate biological synaptic behavior, including synaptic plasticity, long-term depression (LTD), long-term potentiation (LTP), amplitude dependence, and frequency dependence. This research provides a strategy for manufacturing highly-reliable electronic synapses for neuromorphic applications.

Keyword:

artificial intelligence atomic layer deposition Au nanoparticle Electronic synapse in-situ formation memristor

Community:

  • [ 1 ] [Ma, Fumin]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350002, Fujian, Peoples R China
  • [ 2 ] [Xu, Zhongwei]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350002, Fujian, Peoples R China
  • [ 3 ] [Liu, Yang]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350002, Fujian, Peoples R China
  • [ 4 ] [Zheng, Yueting]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350002, Fujian, Peoples R China
  • [ 5 ] [Chen, Wei]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350002, Fujian, Peoples R China
  • [ 6 ] [Hu, Hailong]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350002, Fujian, Peoples R China
  • [ 7 ] [Guo, Tailiang]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350002, Fujian, Peoples R China
  • [ 8 ] [Li, Fushan]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350002, Fujian, Peoples R China
  • [ 9 ] [Wu, Chaoxing]Hanyang Univ, Dept Elect Engn, Seoul 133791, South Korea
  • [ 10 ] [Kim, Tae Whan]Hanyang Univ, Dept Elect Engn, Seoul 133791, South Korea

Reprint 's Address:

  • 李福山

    [Li, Fushan]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350002, Fujian, Peoples R China;;[Kim, Tae Whan]Hanyang Univ, Dept Elect Engn, Seoul 133791, South Korea

Show more details

Related Keywords:

Related Article:

Source :

IEEE ELECTRON DEVICE LETTERS

ISSN: 0741-3106

Year: 2019

Issue: 10

Volume: 40

Page: 1610-1613

4 . 2 2 1

JCR@2019

4 . 1 0 0

JCR@2023

ESI Discipline: ENGINEERING;

ESI HC Threshold:150

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 6

SCOPUS Cited Count: 7

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

Online/Total:84/10109805
Address:FZU Library(No.2 Xuyuan Road, Fuzhou, Fujian, PRC Post Code:350116) Contact Us:0591-22865326
Copyright:FZU Library Technical Support:Beijing Aegean Software Co., Ltd. 闽ICP备05005463号-1