Highly Reliable Electronic Synapse Based on Au@Al2O3 Core-Shell Nanoparticles for Neuromorphic Applications - Details

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Abstract：

Simulating　synaptic　function　and　building　brain-inspired　computers　have　received　widespread　attention.　The　memristor　is　considered　to　be　an　electronic　version　of　the　synapse　and　an　excellent　element　for　creating　a　brand-new　artificial　intelligence　system　in　the　future.　However,　most　memristor-based　electronic　synapses　currently　exhibit　low　stability　due　to　complex　resistance　switching　processes.　Based　on　a　controllable　in-situ　formation　strategy　that　we　were　able　to　employ　with　atomic　layer　deposition,　we　fabricated　electronic　synapses　based　on　Au@Al2O3　core-shell　nanoparticles.　Our　device　exhibited　extremely　reliable,　stable,　and　durable　performance　and　showed　a　capability　to　emulate　biological　synaptic　behavior,　including　synaptic　plasticity,　long-term　depression　(LTD),　long-term　potentiation　(LTP),　amplitude　dependence,　and　frequency　dependence.　This　research　provides　a　strategy　for　manufacturing　highly-reliable　electronic　synapses　for　neuromorphic　applications.　©　2019　IEEE.

Keyword：

artificial intelligence; atomic layer deposition; Au nanoparticle; Electronic synapse; in-situ formation; memristor

Community：

[ 1 ] [Ma, F.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
[ 2 ] [Xu, Z.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
[ 3 ] [Liu, Y.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
[ 4 ] [Zheng, Y.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
[ 5 ] [Chen, W.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
[ 6 ] [Hu, H.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
[ 7 ] [Guo, T.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
[ 8 ] [Li, F.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
[ 9 ] [Wu, C.]Department of Electronic Engineering, Hanyang University, Seoul, South Korea
[ 10 ] [Kim, T.W.]Department of Electronic Engineering, Hanyang University, Seoul, South Korea

Reprint 's Address：

[Li, F.]Institute of Optoelectronic Technology, Fuzhou UniversityChina

Email：

fsli@fzu.edu.cn

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Source ：

IEEE Electron Device Letters

ISSN： 0741-3106

Year： 2019

Issue： 10

Volume： 40

Page： 1610-1613

4 . 2 2 1

JCR@2019

4 . 1 0 0

JCR@2023

ESI HC Threshold：150

CAS Journal Grade：3

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WoS CC Cited Count：

SCOPUS Cited Count： 7

ESI Highly Cited Papers on the List： 0 Unfold All

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Chinese Cited Count：

30 Days PV： 0

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