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学者姓名：陈耿旭
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Abstract ：
神经形态计算通过模拟生物神经系统的突触可塑性,为构建低功耗、高容错的智能感知系统提供了新思路.本文提出了一种基于二维铁电钙钛矿材料(PMA)2PbCl4的光突触晶体管.该材料兼具铁电极化特性和宽光谱光响应能力.通过将其与高迁移率的有机半导体PDVT-10结合,设计了一种新型人工光突触器件.实验结果表明,该器件在光脉冲下能够成功模拟兴奋性突触后电流(EPSC)和双脉冲易化(PPF)等生物突触功能.基于该器件的神经网络在Fashion-MNIST数据集分类任务中表现出优异的抗噪声性能.本研究为开发高性能的神经形态视觉系统提供了新的材料与器件设计策略.
Keyword ：
二维材料 二维材料 人工突触 人工突触 神经形态计算 神经形态计算 铁电钙钛矿 铁电钙钛矿
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| GB/T 7714 | 章鹏 , 陈耿旭 . 基于二维铁电钙钛矿的人工光突触晶体管制备与性能研究 [J]. | 功能材料与器件学报 , 2025 , 31 (1) : 64-69 . |
| MLA | 章鹏 等. "基于二维铁电钙钛矿的人工光突触晶体管制备与性能研究" . | 功能材料与器件学报 31 . 1 (2025) : 64-69 . |
| APA | 章鹏 , 陈耿旭 . 基于二维铁电钙钛矿的人工光突触晶体管制备与性能研究 . | 功能材料与器件学报 , 2025 , 31 (1) , 64-69 . |
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In the digital age, biometric recognition technology is highly valued and widely used in biometrics, security detection, and personalized medicine. This demands more efficient and diverse extraction methods. Traditional techniques rely on natural light, often failing to capture all necessary information and facing issues like high energy consumption and bulky design due to component separation, thus not meeting current high demands. In this paper, a polarization-sensitive synaptic phototransistor based on perovskite nanowire is developed using nanoimprint technology, effectively integrating artificial photonic synapses with polarized light detection to enhance system integration. Notably, this device achieves a high polarization ratio of 2.2 under different polarization angles. Additionally, it features memory-like optical synapse functionality, improving fingerprint recognition accuracy by 225% compared to natural light. This technology overcomes the limitations of traditional optical systems, meeting the needs of security, medical, and research fields to a certain extent.
Keyword ：
biometric recognition biometric recognition neuromorphic computing neuromorphic computing perovskite nanowires perovskite nanowires synaptic transistor synaptic transistor
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| GB/T 7714 | Yang, Peng , Yu, Xipeng , Yu, Rengjian et al. High Polarization-Sensitive Synaptic Transistor Based on Perovskite Nanowire Array for Efficient Biometric Recognition [J]. | ADVANCED FUNCTIONAL MATERIALS , 2024 , 35 (11) . |
| MLA | Yang, Peng et al. "High Polarization-Sensitive Synaptic Transistor Based on Perovskite Nanowire Array for Efficient Biometric Recognition" . | ADVANCED FUNCTIONAL MATERIALS 35 . 11 (2024) . |
| APA | Yang, Peng , Yu, Xipeng , Yu, Rengjian , Gao, Changsong , Zhang, Peng , Lin, Tao et al. High Polarization-Sensitive Synaptic Transistor Based on Perovskite Nanowire Array for Efficient Biometric Recognition . | ADVANCED FUNCTIONAL MATERIALS , 2024 , 35 (11) . |
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Artificial photonic synapses offer an efficient solution for overcoming the von Neumann bottleneck in data storage and processing, providing advantages over electrical synapses by eliminating the bandwidth-connection-density tradeoff and exhibiting low power consumption. Perovskite quantum dots (QDs) have garnered significant attention in artificial photonic synapses due to their facile synthesis and favorable optoelectronic properties. However, challenges such as limited carrier mobility and nonlinearity impede their performance in neuromorphic applications. In this study, CsPbBr3-attached MXene nanostructures (CsPbBr3-MXene), in-situ growth of CsPbBr3 QDs on MXene nanosheets, were proposed as the light-absorbing layer of a synaptic phototransistor. The heterostructure formed by CsPbBr3 and MXene enhances photocurrent generation. Comparative analyses between CsPbBr3-MXene synapse transistor and that containing only CsPbBr3 revealed a 24.6% higher excitatory postsynaptic current (EPSC) in the CsPbBr3-MXene one under identical light pulse stimulation. Following calculations and comparisons, the linearity exhibited significant improvement, decreasing from 4.586 to 1.099. Furthermore, the recognition accuracy in handwritten digit classification notably increased, rising from 86.13% to 92.05%. Moreover, the F1 score in edge detection had improvement, advancing from 0.8165 to 0.9065, approaching closer to 1. These improvements have demonstrated substantial assistance in the field of neural computing.
Keyword ：
CsPbBr3-attached MXene CsPbBr3-attached MXene image preprocessing image preprocessing in-situ growth in-situ growth pattern recognition accuracy pattern recognition accuracy synaptic phototransistor synaptic phototransistor
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| GB/T 7714 | Dai, Yan , Chen, Gengxu , Huang, Weilong et al. A high-linearity synaptic phototransistor based on CsPbBr3-attached MXene nanostructures for image classification and edge detection tasks [J]. | SCIENCE CHINA-MATERIALS , 2024 , 67 (7) : 2246-2255 . |
| MLA | Dai, Yan et al. "A high-linearity synaptic phototransistor based on CsPbBr3-attached MXene nanostructures for image classification and edge detection tasks" . | SCIENCE CHINA-MATERIALS 67 . 7 (2024) : 2246-2255 . |
| APA | Dai, Yan , Chen, Gengxu , Huang, Weilong , Xu, Chenhui , Liu, Changfei , Huang, Ziyu et al. A high-linearity synaptic phototransistor based on CsPbBr3-attached MXene nanostructures for image classification and edge detection tasks . | SCIENCE CHINA-MATERIALS , 2024 , 67 (7) , 2246-2255 . |
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Multi-sensory neuromorphic devices (MND) have broad potential in overcoming the structural bottleneck of von Neumann in the era of big data. However, the current multisensory artificial neuromorphic system is mainly based on unitary nonvolatile memory or volatile synaptic devices without intrinsic thermal sensitivity, which limits the range of biological multisensory perception and the flexibility and computational efficiency of the neural morphological computing system. Here, a temperature-dependent memory/synaptic hybrid artificial neuromorphic device based on floating gate phototransistors (FGT) is fabricated. The CsPbBr3/TiO2 core-shell nanocrystals (NCs) prepared by in-situ pre-protection low-temperature solvothermal method were used as the photosensitive layer. The device exhibits remarkable multi-level visual memory with a large memory window of 59.6 V at room temperature. Surprisingly, when the temperature varies from 20 to 120 & DEG;C back and forth, the device can switch between nonvolatile memory and volatile synaptic device with reconfigurable and reversible behaviors, which contributes to the efficient visual/thermal fusion perception. This work expands the sensory range of multisensory devices and promotes the development of memory and neuromorphic devices based on organic field-effect transistors (OFET).
Keyword ：
floating gate phototransistors floating gate phototransistors multisensory neuromorphic devices multisensory neuromorphic devices perovskite nanocrystals perovskite nanocrystals temperature temperature
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| GB/T 7714 | Chen, Gengxu , Yu, Xipeng , Gao, Changsong et al. Temperature-controlled multisensory neuromorphic devices for artificial visual dynamic capture enhancement [J]. | NANO RESEARCH , 2023 , 16 (5) : 7661-7670 . |
| MLA | Chen, Gengxu et al. "Temperature-controlled multisensory neuromorphic devices for artificial visual dynamic capture enhancement" . | NANO RESEARCH 16 . 5 (2023) : 7661-7670 . |
| APA | Chen, Gengxu , Yu, Xipeng , Gao, Changsong , Dai, Yan , Hao, Yanxue , Yu, Rengjian et al. Temperature-controlled multisensory neuromorphic devices for artificial visual dynamic capture enhancement . | NANO RESEARCH , 2023 , 16 (5) , 7661-7670 . |
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Artificial tactile sensing system could realize the perception of different types of tactile information. Nowadays, most tactile sensors mainly convert the exter-nal stimulation signals into different material conductiv-ity value, and processed by complex external circuits to detect the human physiological signals. In this work, the artificial synaptic device was connected with triboelectric nanogenerator(TENG) to fabricate a tactile sensing system in a simple way. This system could detect the external pressure stimulations and accurately recognize small fre-quency touch signals of 1-2.5 Hz. In addition, the complex biological behavior was also simulated, which enlightened significance for the future bionic tactile systems and the field of human-computer interaction.
Keyword ：
Biology Biology Dogs Dogs Electrodes Electrodes Ions Ions Sensors Sensors Synapses Synapses Synaptic transistor Synaptic transistor touch detection touch detection Transistors Transistors triboelectric nanogenerator triboelectric nanogenerator
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| GB/T 7714 | Liu, Di , Lian, Qiming , Liu, Yaqian et al. Artificial Tactile Sensing System Based on Triboelectric Nanogenerator and Synaptic Transistor [J]. | IEEE ELECTRON DEVICE LETTERS , 2023 , 44 (4) : 634-637 . |
| MLA | Liu, Di et al. "Artificial Tactile Sensing System Based on Triboelectric Nanogenerator and Synaptic Transistor" . | IEEE ELECTRON DEVICE LETTERS 44 . 4 (2023) : 634-637 . |
| APA | Liu, Di , Lian, Qiming , Liu, Yaqian , Zhang, Xianghong , Shan, Liuting , Chen, Gengxu et al. Artificial Tactile Sensing System Based on Triboelectric Nanogenerator and Synaptic Transistor . | IEEE ELECTRON DEVICE LETTERS , 2023 , 44 (4) , 634-637 . |
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3D optical storage, spatially expanding storage capacity, is regarded as an effective and economical way to break the diffraction limit of the conventional 2D optical storage. In this study, a new kind of 3D optical storage medium, i.e., vanadium ions (V5+) doped sodium borate glass, is developed, showing intriguing spatially-selected photochromism (PC) upon laser driven excitation. Significantly, a brand-new PC mechanism of V5+-aggregation regulated by localized optical basicity (OB) of glass is proposed and demonstrated. The developed PC glass is responsive to a low-price desktop-level mini-laser to encode optical information, yields unique twofold decoding modes in bright- and dark-fields, and shows good data erasibility. 3D volumetric optical storage with a memory density of approximate to 480 Mbit cm-3 is realized with the aid of an advanced femtosecond laser micro-machining system. The findings suggest a novel design approach to fabricate 3D PC glass in terms of manipulating the scale of optical basicity in glass, hopefully stimulating the development of new multi-dimensional PC optical storage media. A new strategy to design photochromic glass as 3D optical storage medium is proposed, following a principle of regulating local optical basicity of glass during the interaction with a laser.image
Keyword ：
glass glass laser laser optical basicity optical basicity optical storage optical storage photochromism photochromism
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| GB/T 7714 | Li, Xuefeng , Wu, Yaman , Lin, Hang et al. Photochromic 3D Optical Storage: Laser-Induced Regulation of Localized Optical Basicity of Glass [J]. | LASER & PHOTONICS REVIEWS , 2023 , 18 (1) . |
| MLA | Li, Xuefeng et al. "Photochromic 3D Optical Storage: Laser-Induced Regulation of Localized Optical Basicity of Glass" . | LASER & PHOTONICS REVIEWS 18 . 1 (2023) . |
| APA | Li, Xuefeng , Wu, Yaman , Lin, Hang , Chen, Gengxu , Hao, Yanxue , Wang, Pengfei et al. Photochromic 3D Optical Storage: Laser-Induced Regulation of Localized Optical Basicity of Glass . | LASER & PHOTONICS REVIEWS , 2023 , 18 (1) . |
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Multifunctional neuromorphic devices, integrating the acquisition, computation, and processing of information, have exceptional advantages to simulate biological behaviors and become one of the foundations of future neuromorphic computing. However, the realization of sensor-memory-calculation in a single device remains a great challenge. Herein, memory-synaptic hybrid optoelectronic transistors were developed with hydrolyzed silica-coated lead-free double perovskite Cs2AgBiBr6 and organic semiconductors, which exhibited sensor-memory-calculation behavior. This work offers a novel strategy for constructing multifunctional neuromorphic devices, which will further inspire the development of floating-gate device in future neuromorphic computing.
Keyword ：
Multifunctional Multifunctional organic thin-film transistors organic thin-film transistors photo-memory photo-memory synaptic plasticity modulation synaptic plasticity modulation
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| GB/T 7714 | Chen, Gengxu , Peng, Gang , Yu, Xipeng et al. Multifunctional Memory-Synaptic Hybrid Optoelectronic Transistors for Neuromorphic Computing [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2022 , 69 (7) : 3997-4001 . |
| MLA | Chen, Gengxu et al. "Multifunctional Memory-Synaptic Hybrid Optoelectronic Transistors for Neuromorphic Computing" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 69 . 7 (2022) : 3997-4001 . |
| APA | Chen, Gengxu , Peng, Gang , Yu, Xipeng , Yu, Weijie , Hao, Yanxue , Dai, Yan et al. Multifunctional Memory-Synaptic Hybrid Optoelectronic Transistors for Neuromorphic Computing . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2022 , 69 (7) , 3997-4001 . |
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Arrays of flexible organic thin-film transistors (OTFTs) are the prerequisite to realize commercialization of flexible electronics. However, photolithography and print techniques are uneasy to combine high performance, high integration density, and compatibility with flexible substrates to fabricate OTFT arrays. In this work, OTFT arrays with high resolution, flexibility and process convenience are patterned by femtosecond laser (fs-laser). 1 cm(2) of area can accommodate up to 6250 transistors with sharp edges and short channel lengths by selective processing. Furthermore, micron-scale resolution flexible image sensor with integration potential were verified. Hence, these results will impel the development of flexible wearable electronic devices in the future.
Keyword ：
ablation ablation Bending Bending Femtosecond laser Femtosecond laser image sensor image sensor Laser ablation Laser ablation Optimized production technology Optimized production technology Organic thin film transistors Organic thin film transistors organic thin-film transistors (OTFTs) organic thin-film transistors (OTFTs) Sensor arrays Sensor arrays Substrates Substrates Thermal stability Thermal stability
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| GB/T 7714 | Chen, Gengxu , Yu, Weijie , Hao, Yanxue et al. Micron-Scale Resolution Image Sensor Based on Flexible Organic Thin Film Transistor Arrays via Femtosecond Laser Processing [J]. | IEEE ELECTRON DEVICE LETTERS , 2022 , 43 (2) : 248-251 . |
| MLA | Chen, Gengxu et al. "Micron-Scale Resolution Image Sensor Based on Flexible Organic Thin Film Transistor Arrays via Femtosecond Laser Processing" . | IEEE ELECTRON DEVICE LETTERS 43 . 2 (2022) : 248-251 . |
| APA | Chen, Gengxu , Yu, Weijie , Hao, Yanxue , Peng, Gang , Yu, Xipeng , Dai, Yan et al. Micron-Scale Resolution Image Sensor Based on Flexible Organic Thin Film Transistor Arrays via Femtosecond Laser Processing . | IEEE ELECTRON DEVICE LETTERS , 2022 , 43 (2) , 248-251 . |
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In this work, an effective method is proposed to enable spatial modulation of the stiffness of elastic substrate through selectively controlling the formation of cross-linked interpenetrating network (IPN). The IPN structure is locally growing on the monomer-injected elastomer through selective ultraviolet light exposure, and the Young's modulus of selected regions can be significantly enhanced by an order of magnitude. Further experiments and finite element analysis results demonstrate that the selective region exhibits 100% strain isolation characteristic. Finally, a metal oxide thin film transistor (MOTFT) array is integrated on the substrates exhibiting negligible performance variation under 100 % tensile strain and 500 tensile cycling. Our strategy opens up a promising way for fabrication of stretchable substrate.
Keyword ：
interpenetrating network interpenetrating network Optical films Optical films Optical imaging Optical imaging Performance evaluation Performance evaluation Strain Strain strain-isolating strain-isolating Stretchable electronics Stretchable electronics Substrates Substrates thin film transistor thin film transistor Thin film transistors Thin film transistors Young's modulus Young's modulus
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| GB/T 7714 | Li, Enlong , Rao, Zhichao , Wang, Xiumei et al. Direct Fabrication of Stretchable Electronics on a Programmable Stiffness Substrate With 100% Strain Isolation [J]. | IEEE ELECTRON DEVICE LETTERS , 2021 , 42 (10) : 1484-1487 . |
| MLA | Li, Enlong et al. "Direct Fabrication of Stretchable Electronics on a Programmable Stiffness Substrate With 100% Strain Isolation" . | IEEE ELECTRON DEVICE LETTERS 42 . 10 (2021) : 1484-1487 . |
| APA | Li, Enlong , Rao, Zhichao , Wang, Xiumei , Liu, Yaqian , Yu, Rengjian , Chen, Gengxu et al. Direct Fabrication of Stretchable Electronics on a Programmable Stiffness Substrate With 100% Strain Isolation . | IEEE ELECTRON DEVICE LETTERS , 2021 , 42 (10) , 1484-1487 . |
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Inspired by biological neuromorphic systems, which can simultaneously perceive, remember, and process enormous information through parallel, energy-efficient processes, artificial synaptic transistors have shown great potential in paving a way to overcome the von Neumann bottleneck for neuromorphic computing. Artificial synapses capable of effectively emulating both the excitatory postsynaptic current (EPSC) and inhibitory postsynaptic current (IPSC) responses, and particularly reconfiguration, are crucial for building neuromorphic systems with desirable versatility. However, it is still challenging to realize emblematical neurobehavior in unipolar transistors owing to the unbalanced carrier concentration. Therefore, for the first time, a facile light-adjustable organic photoelectric synaptic transistor based on bulk heterojunction blends is developed. In addition, typical synaptic properties including the excitatory/inhibition postsynaptic current, paired pulse facilitation/inhibition, frequency-dependent characteristics, the transformation from short-term to long-term plasticity are successfully simulated and modulated by light illumination. Moreover, the mechanism of light illumination on the neuroplasticity of our synaptic device is discussed. Notably, the recognition accuracy of our synaptic device can be efficaciously modulated by the light intensity and achieves 86% accuracy with appropriate light exposure conditions. The artificial synaptic devices based on bulk heterojunction open up a whole new path for the urgent need of neuromorphic computation, in which light illumination can be utilized for modifying the circuit learning rate.
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| GB/T 7714 | Lan, Shuqiong , Zhong, Jianfeng , Chen, Jinwei et al. An optoelectronic synaptic transistor with efficient dual modulation by light illumination [J]. | JOURNAL OF MATERIALS CHEMISTRY C , 2021 , 9 (10) : 3412-3420 . |
| MLA | Lan, Shuqiong et al. "An optoelectronic synaptic transistor with efficient dual modulation by light illumination" . | JOURNAL OF MATERIALS CHEMISTRY C 9 . 10 (2021) : 3412-3420 . |
| APA | Lan, Shuqiong , Zhong, Jianfeng , Chen, Jinwei , He, Weixin , He, Lihua , Yu, Rengjian et al. An optoelectronic synaptic transistor with efficient dual modulation by light illumination . | JOURNAL OF MATERIALS CHEMISTRY C , 2021 , 9 (10) , 3412-3420 . |
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