The　photoinduced　anomalous　Hall　effect　(PAHE)　serves　as　a　powerful　probe　for　investigating　topological　band　structures　in　quantum　materials.　While　three-dimensional　(3D)　topological　insulators　(TIs)　like　Sb2Te3　exhibit　promising　spintronic　properties,　achieving　effective　modulation　of　their　PAHE　remains　experimentally　challenging.　This　study　demonstrates　strain-engineered　control　of　PAHE　in　Sb2Te3　thin　films　with　thicknesses　ranging　from　5　to　20　quintuple　layers　(QLs).　Through　systematic　strain-dependent　measurements,　we　reveal　a　non-monotonic　thickness-mediated　response:　the　PAHE　current　initially　increases　then　decreases　under　uniaxial　tensile　strain　across　all　studied　thicknesses.　Remarkably,　the　seven　QL　sample　under　0.18%　tensile　strain　exhibits　a　record-high　photoinduced　anomalous　Hall　conductivity　of　1.88　×　103　m/(　Ω　·　W)　under　1064　nm　illumination.　Comprehensive　analysis　of　strain-dependent　sheet　resistance　(Rs),　photoconductivity　current　(IPC)　of　the　Si　substrates,　and　circular　photogalvanic　effect　(CPGE)　current　of　the　Sb2Te3　films　on　Si　substrates,　uncovers　a　strain-mediated　mechanism　governed　by　the　synergistic　effects　of　spin　injection　from　Si　substrates　and　strain-modulated　spin-orbit　coupling　strength.　Our　findings　demonstrate　a　viable　strategy　for　manipulating　quantum　transport　through　strain　engineering　while　providing　insights　into　the　interplay　between　mechanical　deformation　and　topological　electronic　states.　©　2025　Author(s).