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学者姓名：赖云锋
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Abstract ：
Different from conventional mode-order converters, the mode exchangers (EXCij), enabling flexible data exchanging between i-th-mode and j-th-mode, are essential building blocks for passive signal switching, signal routing, and high-capacity mode division multiplexing (MDM) networks. However, mode changers are limited by the strong polarization-dependence, especially on the 220-nm-thick silicon-on-insulator (SOI) platform. In this paper, an ultracompact and polarization-independent EXC01 and EXC02 are proposed to overcome this limitation by using MZI-like models. Here, subwavelength grating (SWG) metamaterials are introduced to the input/output Y-branches for mode splitting/combining and one arm for phase shifting. As such, a pi phase difference is formed by the SWG-manipulated phase shifter and then the modes guided in branches are combined into the required output modes. The characterizations show low insertion losses (<1.6 dB) and crosstalk (<-15 dB) over bandwidths of 31 nm and 49 nm, for EXC01 and EXC02, respectively. For footprints, EXC01/EXC02 has ultracompact size of 13.42 x 1.704/2.044 x 8.434 mu m(2). For the first time, a polarization-independent mode change between 0-th-mode (0-th-mode) and 1-th-mode (2-th-mode) are achieved and can be applied in in flexible MDM systems, signal routing, passive signal switching and beyond.
Keyword ：
Bandwidth Bandwidth Integrated optical devices Integrated optical devices Metamaterials Metamaterials mode change mode change mode division multiplexing mode division multiplexing mode-order converters mode-order converters multimode photonics multimode photonics Optical sensors Optical sensors Phase shifters Phase shifters Photonics Photonics Refractive index Refractive index Silicon Silicon
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| GB/T 7714 | Guo, Zhenzhao , Wu, Shengbao , Lai, Yunfeng et al. Ultracompact and Polarization-Independent On-Chip Mode Exchangers Enabled by Subwavelength Grating Metamaterials [J]. | JOURNAL OF LIGHTWAVE TECHNOLOGY , 2025 , 43 (1) : 308-316 . |
| MLA | Guo, Zhenzhao et al. "Ultracompact and Polarization-Independent On-Chip Mode Exchangers Enabled by Subwavelength Grating Metamaterials" . | JOURNAL OF LIGHTWAVE TECHNOLOGY 43 . 1 (2025) : 308-316 . |
| APA | Guo, Zhenzhao , Wu, Shengbao , Lai, Yunfeng , Cheng, Shuying . Ultracompact and Polarization-Independent On-Chip Mode Exchangers Enabled by Subwavelength Grating Metamaterials . | JOURNAL OF LIGHTWAVE TECHNOLOGY , 2025 , 43 (1) , 308-316 . |
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Topological edge states, emerging at boundaries between regions with distinct topological properties, enable unidirectional transmission with robustness against defects and disorder. However, achieving dual-band operation with high performance remains challenging. Here, we integrate dual-band topological edge states into a valley photonic crystal cavity operating in the mid-infrared region, leveraging triangular scatterers. A key contribution of this work is the simultaneous realization of ultra-high Q-factors (up to 6.1593 × 109) and uniform mode distribution (inverse participation ratio © 2025 by the authors.
Keyword ：
Inverse problems Inverse problems Photonic integrated circuits Photonic integrated circuits Q factor measurement Q factor measurement
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| GB/T 7714 | Kang, Chen , Yu, Jinling , Chen, Can et al. Dual-Band Topological Valley Cavity in Mid-Infrared Range [J]. | Photonics , 2025 , 12 (5) . |
| MLA | Kang, Chen et al. "Dual-Band Topological Valley Cavity in Mid-Infrared Range" . | Photonics 12 . 5 (2025) . |
| APA | Kang, Chen , Yu, Jinling , Chen, Can , Lai, Yunfeng , Cheng, Shuying , Chen, Yonghai et al. Dual-Band Topological Valley Cavity in Mid-Infrared Range . | Photonics , 2025 , 12 (5) . |
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Quantum cascade lasers (QCLs) and interband cascade lasers (ICLs) are well-established and reliable sources of mid-infrared (IR) radiation. In photonic crystals, topological edge states (ESs) emerge at the boundaries between spatial domains with different topological properties. These ESs exhibit unidirectional transmission, effectively suppressing backscattering and maintaining robustness against defects and disorders. In this work, the unique attributes of topological valley photonic crystals compatible with QCLs and ICLs are investigated. The results demonstrate the topological protection offered by valley-dependent ES, which is essential for one-way optical propagation in devices and resonant cavities. Furthermore, topologically protected triangular cavities based on VPCs exhibit high quality factors and uniform energy distribution, even in the presence of structural defects. Additionally, the different characteristics of transverse electric (TE) and transverse magnetic (TM) mode resonant cavities enable the development of application-specific topological lasers, allowing for optimal performance tailored to diverse operational requirements. (c) 2025 Optica Publishing Group. All rights, including for text and data mining (TDM), Artificial Intelligence (AI) training, and similar technologies, are reserved.
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| GB/T 7714 | Kang, Chen , Yu, Jinling , Chen, Can et al. Mid-infrared topological cavity with valley edge modes [J]. | APPLIED OPTICS , 2025 , 64 (12) : 3122-3132 . |
| MLA | Kang, Chen et al. "Mid-infrared topological cavity with valley edge modes" . | APPLIED OPTICS 64 . 12 (2025) : 3122-3132 . |
| APA | Kang, Chen , Yu, Jinling , Chen, Can , Lai, Yunfeng , Cheng, Shuying , Chen, Yonghai et al. Mid-infrared topological cavity with valley edge modes . | APPLIED OPTICS , 2025 , 64 (12) , 3122-3132 . |
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The in-plane optical anisotropy (IPOA) of c-plane InGaN/GaN quantum disks (Qdisks) in nanowires grown on MoS2/Mo and Ti/Mo substrates is investigated using reflectance difference spectroscopy (RDS) at room temperature. A large IPOA related to defect or impurity states is observed. The IPOA of samples grown on MoS2/Mo is approximately one order of magnitude larger than that of samples grown on Ti/Mo substrates. Numerical calculations based on the envelope function approximation have been performed to analyze the origin of the IPOA. It is found that the IPOA primarily results from the segregation of indium atoms in the InGaN/GaN Qdisks. This work highlights the significant influence of substrate materials on the IPOA of semiconductor heterostructures.
Keyword ：
73.21.Fg 73.21.Fg 78.20.Bh 78.20.Bh 78.55.Cr 78.55.Cr 78.67.Uh 78.67.Uh InGaN/GaN InGaN/GaN in-plane optical anisotropy in-plane optical anisotropy k & sdot k & sdot p method p method reflectance difference spectroscopy reflectance difference spectroscopy
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| GB/T 7714 | Wei, Tingting , Yu, Jinling , Diao, Zhu et al. In-plane optical anisotropy of InGaN/GaN quantum disks in nanowires investigated by reflectance difference spectroscopy [J]. | CHINESE PHYSICS B , 2025 , 34 (6) . |
| MLA | Wei, Tingting et al. "In-plane optical anisotropy of InGaN/GaN quantum disks in nanowires investigated by reflectance difference spectroscopy" . | CHINESE PHYSICS B 34 . 6 (2025) . |
| APA | Wei, Tingting , Yu, Jinling , Diao, Zhu , Li, Zhaonan , Cheng, Shuying , Lai, Yunfeng et al. In-plane optical anisotropy of InGaN/GaN quantum disks in nanowires investigated by reflectance difference spectroscopy . | CHINESE PHYSICS B , 2025 , 34 (6) . |
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The photoinduced anomalous Hall effect (PAHE) serves as a powerful probe for investigating topological band structures in quantum materials. While three-dimensional (3D) topological insulators (TIs) like Sb2Te3 exhibit promising spintronic properties, achieving effective modulation of their PAHE remains experimentally challenging. This study demonstrates strain-engineered control of PAHE in Sb2Te3 thin films with thicknesses ranging from 5 to 20 quintuple layers (QLs). Through systematic strain-dependent measurements, we reveal a non-monotonic thickness-mediated response: the PAHE current initially increases then decreases under uniaxial tensile strain across all studied thicknesses. Remarkably, the seven QL sample under 0.18% tensile strain exhibits a record-high photoinduced anomalous Hall conductivity of 1.88 × 103 m/( Ω · W) under 1064 nm illumination. Comprehensive analysis of strain-dependent sheet resistance (Rs), photoconductivity current (IPC) of the Si substrates, and circular photogalvanic effect (CPGE) current of the Sb2Te3 films on Si substrates, uncovers a strain-mediated mechanism governed by the synergistic effects of spin injection from Si substrates and strain-modulated spin-orbit coupling strength. Our findings demonstrate a viable strategy for manipulating quantum transport through strain engineering while providing insights into the interplay between mechanical deformation and topological electronic states. © 2025 Author(s).
Keyword ：
Antimony compounds Antimony compounds Electric insulators Electric insulators Quantum chemistry Quantum chemistry Quantum theory Quantum theory Spin Hall effect Spin Hall effect Spin orbit coupling Spin orbit coupling Substrates Substrates Tellurium compounds Tellurium compounds Tensile strain Tensile strain Thin films Thin films Titanium compounds Titanium compounds Topological insulators Topological insulators
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| GB/T 7714 | Liu, Tengfei , Hong, Xiyu , Lin, Zongkai et al. Strain engineering of photoinduced anomalous Hall effect in topological insulator Sb2Te3 [J]. | Applied Physics Letters , 2025 , 127 (5) . |
| MLA | Liu, Tengfei et al. "Strain engineering of photoinduced anomalous Hall effect in topological insulator Sb2Te3" . | Applied Physics Letters 127 . 5 (2025) . |
| APA | Liu, Tengfei , Hong, Xiyu , Lin, Zongkai , Qiu, Jiayi , Cheng, Shuying , Lai, Yunfeng et al. Strain engineering of photoinduced anomalous Hall effect in topological insulator Sb2Te3 . | Applied Physics Letters , 2025 , 127 (5) . |
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We present a systematic investigation of helicity-dependent photocurrent (HDPC) in epitaxial PbTe quantum wells (QWs), revealing a striking transition in the dominant mechanism upon Pb doping. While the undoped QW exhibits predominantly the circular photon drag effect, Pb doping triggers a crossover to the circular photogalvanic effect. This transition is mainly attributed to the doping-enhanced spin-orbit coupling (SOC) strengths. Crucially, the absence of HDPC when the photocurrent-collecting electrodes are aligned within the laser incidence plane provides rigorous confirmation of the system's C 3 v symmetry, excluding extrinsic symmetry-breaking artifacts. Quantitative analysis of the Rashba-induced effective electric field ( α e ) reveals distinct temperature dependence: the Pb-doped QW exhibits a positive correlation between the SOC strength and temperature, whereas the undoped QW shows a negative trend. Furthermore, bias-dependent modulation demonstrates superior HDPC tunability in the undoped QW, facilitated by its higher photocarrier concentrations. These findings establish PbTe QWs as a promising platform for opto-spintronic device design. © 2025 Author(s).
Keyword ：
Bias voltage Bias voltage IV-VI semiconductors IV-VI semiconductors Lead Lead Lead compounds Lead compounds Photocurrents Photocurrents Semiconductor quantum wells Semiconductor quantum wells Spin orbit coupling Spin orbit coupling Tellurium compounds Tellurium compounds Temperature distribution Temperature distribution
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| GB/T 7714 | Li, Qiang , Hong, Xiyu , Zang, Yunyi et al. Temperature and bias voltage control of helicity-dependent photocurrent in PbTe/PbEuTe quantum wells [J]. | Applied Physics Letters , 2025 , 127 (5) . |
| MLA | Li, Qiang et al. "Temperature and bias voltage control of helicity-dependent photocurrent in PbTe/PbEuTe quantum wells" . | Applied Physics Letters 127 . 5 (2025) . |
| APA | Li, Qiang , Hong, Xiyu , Zang, Yunyi , Diao, Zhu , Cheng, Shuying , Lai, Yunfeng et al. Temperature and bias voltage control of helicity-dependent photocurrent in PbTe/PbEuTe quantum wells . | Applied Physics Letters , 2025 , 127 (5) . |
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Helicity-dependent photocurrent (HDPC) and its modulation in topological insulator Bi2Te3 nanowires have been investigated. It is revealed that when the incident plane of a laser is perpendicular to the nanowire, the HDPC is an odd function of the incident angle, which is mainly contributed by the circular photogalvanic effect originating from the surface states of Bi2Te3 nanowire. When the incident plane of a laser is parallel to the nanowire, the HDPC is approximately an even function of the incident angle, which is due to the circular photon drag effect coming from the surface states. It is found that the HDPC can be effectively tuned by the back gate and the ionic liquid top gate. By analyzing the substrate dependence of the HDPC, we find that the HDPC of the Bi2Te3 nanowire on the Si substrate is an order of magnitude larger than that on SiO2, which may be due to the spin injection from the Si substrate to the Bi2Te3 nanowire. In addition, by applying different biases, the Stokes parameters of a polarized light can be extracted by arithmetic operation of the photocurrents measured in the Bi2Te3 nanowire. This work suggests that topological insulator Bi2Te3 nanowires may provide a good platform for opto-spintronic devices, especially in chirality and polarimtry detection.
Keyword ：
Bi2Te3 Nanowires Bi2Te3 Nanowires Helicity DependentPhotocurrent Helicity DependentPhotocurrent Ionic Liquid Gating Ionic Liquid Gating Stokes ParameterDetection Stokes ParameterDetection Substrates Substrates
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| GB/T 7714 | Yu, Qin , Feng, Shizun , Yu, Jinling et al. Manipulation of Helicity-Dependent Photocurrent and Stokes Parameter Detection in Topological Insulator Bi2Te3 Nanowires [J]. | ACS APPLIED MATERIALS & INTERFACES , 2024 , 16 (30) : 40297-40308 . |
| MLA | Yu, Qin et al. "Manipulation of Helicity-Dependent Photocurrent and Stokes Parameter Detection in Topological Insulator Bi2Te3 Nanowires" . | ACS APPLIED MATERIALS & INTERFACES 16 . 30 (2024) : 40297-40308 . |
| APA | Yu, Qin , Feng, Shizun , Yu, Jinling , Cheng, Shuying , Lai, Yunfeng , Chen, Yonghai et al. Manipulation of Helicity-Dependent Photocurrent and Stokes Parameter Detection in Topological Insulator Bi2Te3 Nanowires . | ACS APPLIED MATERIALS & INTERFACES , 2024 , 16 (30) , 40297-40308 . |
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Chiral metasurfaces with high quality factors (Q-factors) are a promising platform for achieving chiral optical responses. However, the optical properties of most metasurfaces are fixed once they are fabricated. Here, we study the effect of phase-change material Ge2Sb2Te5 (GST) on the chiral optics of a planar chiral Si metasurface driven by bound states in the continuum (BICs), as the refractive index of the phase-change material changes before and after the phase change. The planar chiral silicon metasurface is capable of generating near-unity (0.99) circular dichroism and giant (0.996) linear dichroism in the infrared region. Notably, phase-change material GST is integrated into the Z-shaped Si metasurfaces. We actively tune the dissipative loss by causing the GST to undergo a phase transition, thereby modulating the optical chirality. In addition, we numerically simulate the effect of the thickness of the phase-change layer and the embedded position on the optical response. Compared with single-functional metasurfaces, this device exhibits better flexibility and more functionalities. It is demonstrated that the optical chirality of the metasurface can be well controlled using the phase-change material GST. (c) 2024 Optica Publishing Group. All rights, including for text and data mining (TDM), Artificial Intelligence (AI) training, and similar technologies, are reserved.
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| GB/T 7714 | Chen, Can , Yu, Jinling , Kang, Chen et al. Chiral optical modulation of Si-Ge2Sb2Te5 2 Sb 2 Te 5 composite metasurfaces driven by quasi-bound states in the continuum [J]. | APPLIED OPTICS , 2024 , 63 (29) : 7682-7691 . |
| MLA | Chen, Can et al. "Chiral optical modulation of Si-Ge2Sb2Te5 2 Sb 2 Te 5 composite metasurfaces driven by quasi-bound states in the continuum" . | APPLIED OPTICS 63 . 29 (2024) : 7682-7691 . |
| APA | Chen, Can , Yu, Jinling , Kang, Chen , Chen, Yonghai , Lai, Yunfeng , Cheng, Shuying . Chiral optical modulation of Si-Ge2Sb2Te5 2 Sb 2 Te 5 composite metasurfaces driven by quasi-bound states in the continuum . | APPLIED OPTICS , 2024 , 63 (29) , 7682-7691 . |
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Orthogonal eigenmodes in multimode waveguides are an indispensable physical dimension for enhancing the capacity of optical communications, and efficient mode converters are therefore of vital functional significance. However, the conventional single-pair mode conversion in a single device is having difficulty meeting the ever-increasing demand for optical capacity. By contrast, the multi-pair mode converter can improve the multiplexing capacity and be further applied in spatial-mode-oriented passive signal switching and permutation cipher. Here, a scalable multi-mode converting model, combing the multimode interference and beam shaping by exploiting subwavelength metamaterials, is firstly reported to enable simultaneous multi-spatial-mode manipulation and break its polarization-dependency limit. Based on this model, five proof-of-concept converters are designed, realizing polarization-independent, and multi-mode conversions, or a combination of both within compact lengths (< 17.436 mu m). For the first time, TE0/TM0-to-TE2/TM2, TE0/TE1/TE2-to-TE2/TE3/ TE4, TE0/TE1/TM0/TM1-to-TE2/TE3/TM2/TM3, and TE0/TE1-to-TE1/TE2 converters are reported and experimentally demonstrated, covering a double/triple/quadruple-mode manipulation in a single device. From measurements, these converters exhibit low insertion losses (0.72 to 1.65 dB) and intermodal crosstalks (-30.26 to -12.19 dB) at 1550 nm, and have a 56-nm/30-nm bandwidth of loss < 1.4 dB/1.9 dB and crosstalk < -13 dB/-10.5 dB, for the best/worst case. The proposed multi-mode converting model can manipulate multiple input modes in parallel and beak the polarization-dependency limit for multi-spatial-mode conversion, which holds great potential for spatial-mode-oriented nanophotonic systems.
Keyword ：
Integrated optical devices Integrated optical devices mode division (de)multiplexing mode division (de)multiplexing mode-order converter mode-order converter
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| GB/T 7714 | Guo, Zhenzhao , Xiao, Jinbiao , Wu, Shengbao et al. Compact, Scalable and Flexible Multi-Mode-Converting Model Employing Subwavelength Gratings [J]. | JOURNAL OF LIGHTWAVE TECHNOLOGY , 2024 , 42 (20) : 7267-7281 . |
| MLA | Guo, Zhenzhao et al. "Compact, Scalable and Flexible Multi-Mode-Converting Model Employing Subwavelength Gratings" . | JOURNAL OF LIGHTWAVE TECHNOLOGY 42 . 20 (2024) : 7267-7281 . |
| APA | Guo, Zhenzhao , Xiao, Jinbiao , Wu, Shengbao , Lai, Yunfeng , Cheng, Shuying . Compact, Scalable and Flexible Multi-Mode-Converting Model Employing Subwavelength Gratings . | JOURNAL OF LIGHTWAVE TECHNOLOGY , 2024 , 42 (20) , 7267-7281 . |
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Helicity-dependent photocurrent (HDPC) of the surface states in a high-quality topological insulator (Bi0.7Sb0.3)(2)Te-3 nanoplate grown by chemical vapor deposition (CVD) is investigated. By investigating the angle-dependent HDPC, it is found that the HDPC is mainly contributed by the circular photogalvanic effect (CPGE) current when the incident plane is perpendicular to the connection of the two contacts, whereas the circular photon drag effect (CPDE) dominates the HDPC when the incident plane is parallel to the connection of the two contacts. In addition, the CPGE of the (Bi0.7Sb0.3)(2)Te-3 nanoplate is regulated by temperature, light power, excitation wavelength, the source-drain and ionic liquid top-gate voltages, and the regulation mechanisms are discussed. It is demonstrated that (Bi0.7Sb0.3)(2)Te-3 nanoplates may provide a good platform for novel opto-spintronics devices.
Keyword ：
(Bi0.7Sb0.3)(2)Te-3 nanoplate (Bi0.7Sb0.3)(2)Te-3 nanoplate circular photogalvanic effect circular photogalvanic effect helicity-dependent photocurrent helicity-dependent photocurrent ionic liquid gating ionic liquid gating
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| GB/T 7714 | Yu, Qin , Yu, Jinling , Chen, Yonghai et al. Investigation of helicity-dependent photocurrent of surface states in (Bi0.7Sb0.3)2Te3 nanoplate [J]. | CHINESE PHYSICS B , 2024 , 33 (5) . |
| MLA | Yu, Qin et al. "Investigation of helicity-dependent photocurrent of surface states in (Bi0.7Sb0.3)2Te3 nanoplate" . | CHINESE PHYSICS B 33 . 5 (2024) . |
| APA | Yu, Qin , Yu, Jinling , Chen, Yonghai , Lai, Yunfeng , Cheng, Shuying , He, Ke . Investigation of helicity-dependent photocurrent of surface states in (Bi0.7Sb0.3)2Te3 nanoplate . | CHINESE PHYSICS B , 2024 , 33 (5) . |
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