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学者姓名：俞金玲
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Topological edge states, emerging at boundaries between regions with distinct topological properties, enable unidirectional transmission with robustness against defects and disorder. However, achieving dual-band operation with high performance remains challenging. Here, we integrate dual-band topological edge states into a valley photonic crystal cavity operating in the mid-infrared region, leveraging triangular scatterers. A key contribution of this work is the simultaneous realization of ultra-high Q-factors (up to 6.1593 × 109) and uniform mode distribution (inverse participation ratio © 2025 by the authors.
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Inverse problems Inverse problems Photonic integrated circuits Photonic integrated circuits Q factor measurement Q factor measurement
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| GB/T 7714 | Kang, Chen , Yu, Jinling , Chen, Can et al. Dual-Band Topological Valley Cavity in Mid-Infrared Range [J]. | Photonics , 2025 , 12 (5) . |
| MLA | Kang, Chen et al. "Dual-Band Topological Valley Cavity in Mid-Infrared Range" . | Photonics 12 . 5 (2025) . |
| APA | Kang, Chen , Yu, Jinling , Chen, Can , Lai, Yunfeng , Cheng, Shuying , Chen, Yonghai et al. Dual-Band Topological Valley Cavity in Mid-Infrared Range . | Photonics , 2025 , 12 (5) . |
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Quantum cascade lasers (QCLs) and interband cascade lasers (ICLs) are well-established and reliable sources of mid-infrared (IR) radiation. In photonic crystals, topological edge states (ESs) emerge at the boundaries between spatial domains with different topological properties. These ESs exhibit unidirectional transmission, effectively suppressing backscattering and maintaining robustness against defects and disorders. In this work, the unique attributes of topological valley photonic crystals compatible with QCLs and ICLs are investigated. The results demonstrate the topological protection offered by valley-dependent ES, which is essential for one-way optical propagation in devices and resonant cavities. Furthermore, topologically protected triangular cavities based on VPCs exhibit high quality factors and uniform energy distribution, even in the presence of structural defects. Additionally, the different characteristics of transverse electric (TE) and transverse magnetic (TM) mode resonant cavities enable the development of application-specific topological lasers, allowing for optimal performance tailored to diverse operational requirements. (c) 2025 Optica Publishing Group. All rights, including for text and data mining (TDM), Artificial Intelligence (AI) training, and similar technologies, are reserved.
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| GB/T 7714 | Kang, Chen , Yu, Jinling , Chen, Can et al. Mid-infrared topological cavity with valley edge modes [J]. | APPLIED OPTICS , 2025 , 64 (12) : 3122-3132 . |
| MLA | Kang, Chen et al. "Mid-infrared topological cavity with valley edge modes" . | APPLIED OPTICS 64 . 12 (2025) : 3122-3132 . |
| APA | Kang, Chen , Yu, Jinling , Chen, Can , Lai, Yunfeng , Cheng, Shuying , Chen, Yonghai et al. Mid-infrared topological cavity with valley edge modes . | APPLIED OPTICS , 2025 , 64 (12) , 3122-3132 . |
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The in-plane optical anisotropy (IPOA) of c-plane InGaN/GaN quantum disks (Qdisks) in nanowires grown on MoS2/Mo and Ti/Mo substrates is investigated using reflectance difference spectroscopy (RDS) at room temperature. A large IPOA related to defect or impurity states is observed. The IPOA of samples grown on MoS2/Mo is approximately one order of magnitude larger than that of samples grown on Ti/Mo substrates. Numerical calculations based on the envelope function approximation have been performed to analyze the origin of the IPOA. It is found that the IPOA primarily results from the segregation of indium atoms in the InGaN/GaN Qdisks. This work highlights the significant influence of substrate materials on the IPOA of semiconductor heterostructures.
Keyword ：
73.21.Fg 73.21.Fg 78.20.Bh 78.20.Bh 78.55.Cr 78.55.Cr 78.67.Uh 78.67.Uh InGaN/GaN InGaN/GaN in-plane optical anisotropy in-plane optical anisotropy k & sdot k & sdot p method p method reflectance difference spectroscopy reflectance difference spectroscopy
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| GB/T 7714 | Wei, Tingting , Yu, Jinling , Diao, Zhu et al. In-plane optical anisotropy of InGaN/GaN quantum disks in nanowires investigated by reflectance difference spectroscopy [J]. | CHINESE PHYSICS B , 2025 , 34 (6) . |
| MLA | Wei, Tingting et al. "In-plane optical anisotropy of InGaN/GaN quantum disks in nanowires investigated by reflectance difference spectroscopy" . | CHINESE PHYSICS B 34 . 6 (2025) . |
| APA | Wei, Tingting , Yu, Jinling , Diao, Zhu , Li, Zhaonan , Cheng, Shuying , Lai, Yunfeng et al. In-plane optical anisotropy of InGaN/GaN quantum disks in nanowires investigated by reflectance difference spectroscopy . | CHINESE PHYSICS B , 2025 , 34 (6) . |
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Semiconductor lasers hold significant promise for space laser communication. However, excessive radiation in space can cause laser failures. In principle, quantum dot (QD) lasers are more radiation-resistant than traditional semiconductor lasers because of their superior carrier confinement and smaller active regions. However, the multifaceted nature of radiation effects on QDs result in ongoing controversies. In this work, comprehensive radiation tests under simulated space conditions on InAs/GaAs QDs and lasers is conducted to validate their performance. The results reveal that InAs/GaAs QDs with filling factors exceeding 50% exhibit enhanced radiation hardness. The linewidth enhancement factor (LEF) of well-designed QD lasers remains remarkably stable and nearly zero, even under proton irradiation at a maximum fluence of 7 x 1013 cm-2, owing to their intrinsic insensitivity to irradiation-induced defects. These QD lasers demonstrate an exceptional average relative intensity noise (RIN) level of -162 dB Hz-1, with only a 1 dB Hz-1 increase at the highest fluence, indicating outstanding stability. Furthermore, the lasers exhibit remarkable robustness against optical feedback, sustaining stable performance even under a feedback strength as high as -3.1 dB. These results highlight the critical advantages of QD lasers for space laser communication applications, where high reliability and resilience to radiation and environmental perturbations are essential.
Keyword ：
molecular beam epitaxy molecular beam epitaxy quantum dots quantum dots radiation hardness radiation hardness semiconductor laser diodes semiconductor laser diodes space communication space communication
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| GB/T 7714 | Li, Manyang , Duan, Jianan , Jin, Zhiyong et al. Enhanced Radiation Hardness of InAs/GaAs Quantum Dot Lasers for Space Communication [J]. | LASER & PHOTONICS REVIEWS , 2025 , 19 (12) . |
| MLA | Li, Manyang et al. "Enhanced Radiation Hardness of InAs/GaAs Quantum Dot Lasers for Space Communication" . | LASER & PHOTONICS REVIEWS 19 . 12 (2025) . |
| APA | Li, Manyang , Duan, Jianan , Jin, Zhiyong , Pan, Shujie , Zhan, Wenkang , Chen, Jinpeng et al. Enhanced Radiation Hardness of InAs/GaAs Quantum Dot Lasers for Space Communication . | LASER & PHOTONICS REVIEWS , 2025 , 19 (12) . |
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The photoinduced anomalous Hall effect (PAHE) serves as a powerful probe for investigating topological band structures in quantum materials. While three-dimensional (3D) topological insulators (TIs) like Sb2Te3 exhibit promising spintronic properties, achieving effective modulation of their PAHE remains experimentally challenging. This study demonstrates strain-engineered control of PAHE in Sb2Te3 thin films with thicknesses ranging from 5 to 20 quintuple layers (QLs). Through systematic strain-dependent measurements, we reveal a non-monotonic thickness-mediated response: the PAHE current initially increases then decreases under uniaxial tensile strain across all studied thicknesses. Remarkably, the seven QL sample under 0.18% tensile strain exhibits a record-high photoinduced anomalous Hall conductivity of 1.88 × 103 m/( Ω · W) under 1064 nm illumination. Comprehensive analysis of strain-dependent sheet resistance (Rs), photoconductivity current (IPC) of the Si substrates, and circular photogalvanic effect (CPGE) current of the Sb2Te3 films on Si substrates, uncovers a strain-mediated mechanism governed by the synergistic effects of spin injection from Si substrates and strain-modulated spin-orbit coupling strength. Our findings demonstrate a viable strategy for manipulating quantum transport through strain engineering while providing insights into the interplay between mechanical deformation and topological electronic states. © 2025 Author(s).
Keyword ：
Antimony compounds Antimony compounds Electric insulators Electric insulators Quantum chemistry Quantum chemistry Quantum theory Quantum theory Spin Hall effect Spin Hall effect Spin orbit coupling Spin orbit coupling Substrates Substrates Tellurium compounds Tellurium compounds Tensile strain Tensile strain Thin films Thin films Titanium compounds Titanium compounds Topological insulators Topological insulators
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| GB/T 7714 | Liu, Tengfei , Hong, Xiyu , Lin, Zongkai et al. Strain engineering of photoinduced anomalous Hall effect in topological insulator Sb2Te3 [J]. | Applied Physics Letters , 2025 , 127 (5) . |
| MLA | Liu, Tengfei et al. "Strain engineering of photoinduced anomalous Hall effect in topological insulator Sb2Te3" . | Applied Physics Letters 127 . 5 (2025) . |
| APA | Liu, Tengfei , Hong, Xiyu , Lin, Zongkai , Qiu, Jiayi , Cheng, Shuying , Lai, Yunfeng et al. Strain engineering of photoinduced anomalous Hall effect in topological insulator Sb2Te3 . | Applied Physics Letters , 2025 , 127 (5) . |
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We present a systematic investigation of helicity-dependent photocurrent (HDPC) in epitaxial PbTe quantum wells (QWs), revealing a striking transition in the dominant mechanism upon Pb doping. While the undoped QW exhibits predominantly the circular photon drag effect, Pb doping triggers a crossover to the circular photogalvanic effect. This transition is mainly attributed to the doping-enhanced spin-orbit coupling (SOC) strengths. Crucially, the absence of HDPC when the photocurrent-collecting electrodes are aligned within the laser incidence plane provides rigorous confirmation of the system's C 3 v symmetry, excluding extrinsic symmetry-breaking artifacts. Quantitative analysis of the Rashba-induced effective electric field ( α e ) reveals distinct temperature dependence: the Pb-doped QW exhibits a positive correlation between the SOC strength and temperature, whereas the undoped QW shows a negative trend. Furthermore, bias-dependent modulation demonstrates superior HDPC tunability in the undoped QW, facilitated by its higher photocarrier concentrations. These findings establish PbTe QWs as a promising platform for opto-spintronic device design. © 2025 Author(s).
Keyword ：
Bias voltage Bias voltage IV-VI semiconductors IV-VI semiconductors Lead Lead Lead compounds Lead compounds Photocurrents Photocurrents Semiconductor quantum wells Semiconductor quantum wells Spin orbit coupling Spin orbit coupling Tellurium compounds Tellurium compounds Temperature distribution Temperature distribution
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| GB/T 7714 | Li, Qiang , Hong, Xiyu , Zang, Yunyi et al. Temperature and bias voltage control of helicity-dependent photocurrent in PbTe/PbEuTe quantum wells [J]. | Applied Physics Letters , 2025 , 127 (5) . |
| MLA | Li, Qiang et al. "Temperature and bias voltage control of helicity-dependent photocurrent in PbTe/PbEuTe quantum wells" . | Applied Physics Letters 127 . 5 (2025) . |
| APA | Li, Qiang , Hong, Xiyu , Zang, Yunyi , Diao, Zhu , Cheng, Shuying , Lai, Yunfeng et al. Temperature and bias voltage control of helicity-dependent photocurrent in PbTe/PbEuTe quantum wells . | Applied Physics Letters , 2025 , 127 (5) . |
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Helicity-dependent photocurrent (HDPC) of the topological surface states (TSSs) in the intrinsic magnetic topological insulator MnBi2Te4 is investigated. It is revealed that the HDPC is mainly contributed by the circular photogalvanic effect (CPGE) current when the incident plane is perpendicular to the connection of the two electrodes, while the circular photon drag effect plays the dominant role when the incident plane is parallel to the connection of the two electrodes. The CPGE current shows an odd function dependence on incident angles, which is consistent with the C 3 v symmetry group of the TSSs in MnBi2Te4. The amplitude of the CPGE current increases with the decrease in temperature, which can be attributed to the increase in mobility at low temperatures, confirmed by the transport measurements. Furthermore, we modulate the CPGE of MnBi2Te4 by applying top gate and source-drain voltages. Compared to Bi2Te3 of the same thickness, the CPGE current of MnBi2Te4 can be more effectively tuned by the top gate because the Fermi level of MnBi2Te4 can be effectively regulated by the top gate, and it is tuned across the Dirac point. This work suggests that the intrinsic magnetic topological insulator MnBi2Te4 is a good candidate for designing opto-spintronics devices.
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| GB/T 7714 | Fu, Houfa , Yu, Jinling , Bai, Yunhe et al. Helicity-dependent photocurrent of topological surface states in the intrinsic magnetic topological insulator MnBi2Te4 [J]. | APPLIED PHYSICS LETTERS , 2024 , 124 (10) . |
| MLA | Fu, Houfa et al. "Helicity-dependent photocurrent of topological surface states in the intrinsic magnetic topological insulator MnBi2Te4" . | APPLIED PHYSICS LETTERS 124 . 10 (2024) . |
| APA | Fu, Houfa , Yu, Jinling , Bai, Yunhe , Cheng, Shuying , Lai, Yunfeng , Chen, Yonghai et al. Helicity-dependent photocurrent of topological surface states in the intrinsic magnetic topological insulator MnBi2Te4 . | APPLIED PHYSICS LETTERS , 2024 , 124 (10) . |
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Optical reflection anisotropy microscopy mappings of micropipe defects on the surface of a 4H-SiC single crystal are studied by the scanning anisotropy microscopy (SAM) system. The reflection anisotropy (RA) image with a 'butterfly pattern' is obtained around the micropipes by SAM. The RA image of the edge dislocations is theoretically simulated based on dislocation theory and the photoelastic principle. By comparing with the Raman spectrum, it is verified that the micropipes consist of edge dislocations. The different patterns of the RA images are due to the different orientations of the Burgers vectors. Besides, the strain distribution of the micropipes is also deduced. One can identify the dislocation type, the direction of the Burgers vector and the optical anisotropy from the RA image by using SAM. Therefore, SAM is an ideal tool to measure the optical anisotropy induced by the strain field around a defect.
Keyword ：
33.20.Fb 33.20.Fb 68.35.Gy 68.35.Gy 78.20.Ci 78.20.Ci 78.20.H- 78.20.H- edge dislocation edge dislocation reflection anisotropy reflection anisotropy scanning anisotropy microscopy scanning anisotropy microscopy SiC SiC
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| GB/T 7714 | Huang, Wei , Yu, Jinling , Liu, Yu et al. Investigation of reflection anisotropy induced by micropipe defects on the surface of a 4H-SiC single crystal using scanning anisotropy microscopy [J]. | CHINESE PHYSICS B , 2024 , 33 (3) . |
| MLA | Huang, Wei et al. "Investigation of reflection anisotropy induced by micropipe defects on the surface of a 4H-SiC single crystal using scanning anisotropy microscopy" . | CHINESE PHYSICS B 33 . 3 (2024) . |
| APA | Huang, Wei , Yu, Jinling , Liu, Yu , Peng, Yan , Wang, Lijun , Liang, Ping et al. Investigation of reflection anisotropy induced by micropipe defects on the surface of a 4H-SiC single crystal using scanning anisotropy microscopy . | CHINESE PHYSICS B , 2024 , 33 (3) . |
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Helicity-dependent photocurrent (HDPC) and its modulation in topological insulator Bi2Te3 nanowires have been investigated. It is revealed that when the incident plane of a laser is perpendicular to the nanowire, the HDPC is an odd function of the incident angle, which is mainly contributed by the circular photogalvanic effect originating from the surface states of Bi2Te3 nanowire. When the incident plane of a laser is parallel to the nanowire, the HDPC is approximately an even function of the incident angle, which is due to the circular photon drag effect coming from the surface states. It is found that the HDPC can be effectively tuned by the back gate and the ionic liquid top gate. By analyzing the substrate dependence of the HDPC, we find that the HDPC of the Bi2Te3 nanowire on the Si substrate is an order of magnitude larger than that on SiO2, which may be due to the spin injection from the Si substrate to the Bi2Te3 nanowire. In addition, by applying different biases, the Stokes parameters of a polarized light can be extracted by arithmetic operation of the photocurrents measured in the Bi2Te3 nanowire. This work suggests that topological insulator Bi2Te3 nanowires may provide a good platform for opto-spintronic devices, especially in chirality and polarimtry detection.
Keyword ：
Bi2Te3 Nanowires Bi2Te3 Nanowires Helicity DependentPhotocurrent Helicity DependentPhotocurrent Ionic Liquid Gating Ionic Liquid Gating Stokes ParameterDetection Stokes ParameterDetection Substrates Substrates
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| GB/T 7714 | Yu, Qin , Feng, Shizun , Yu, Jinling et al. Manipulation of Helicity-Dependent Photocurrent and Stokes Parameter Detection in Topological Insulator Bi2Te3 Nanowires [J]. | ACS APPLIED MATERIALS & INTERFACES , 2024 , 16 (30) : 40297-40308 . |
| MLA | Yu, Qin et al. "Manipulation of Helicity-Dependent Photocurrent and Stokes Parameter Detection in Topological Insulator Bi2Te3 Nanowires" . | ACS APPLIED MATERIALS & INTERFACES 16 . 30 (2024) : 40297-40308 . |
| APA | Yu, Qin , Feng, Shizun , Yu, Jinling , Cheng, Shuying , Lai, Yunfeng , Chen, Yonghai et al. Manipulation of Helicity-Dependent Photocurrent and Stokes Parameter Detection in Topological Insulator Bi2Te3 Nanowires . | ACS APPLIED MATERIALS & INTERFACES , 2024 , 16 (30) , 40297-40308 . |
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Chiral metasurfaces with high quality factors (Q-factors) are a promising platform for achieving chiral optical responses. However, the optical properties of most metasurfaces are fixed once they are fabricated. Here, we study the effect of phase-change material Ge2Sb2Te5 (GST) on the chiral optics of a planar chiral Si metasurface driven by bound states in the continuum (BICs), as the refractive index of the phase-change material changes before and after the phase change. The planar chiral silicon metasurface is capable of generating near-unity (0.99) circular dichroism and giant (0.996) linear dichroism in the infrared region. Notably, phase-change material GST is integrated into the Z-shaped Si metasurfaces. We actively tune the dissipative loss by causing the GST to undergo a phase transition, thereby modulating the optical chirality. In addition, we numerically simulate the effect of the thickness of the phase-change layer and the embedded position on the optical response. Compared with single-functional metasurfaces, this device exhibits better flexibility and more functionalities. It is demonstrated that the optical chirality of the metasurface can be well controlled using the phase-change material GST. (c) 2024 Optica Publishing Group. All rights, including for text and data mining (TDM), Artificial Intelligence (AI) training, and similar technologies, are reserved.
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| GB/T 7714 | Chen, Can , Yu, Jinling , Kang, Chen et al. Chiral optical modulation of Si-Ge2Sb2Te5 2 Sb 2 Te 5 composite metasurfaces driven by quasi-bound states in the continuum [J]. | APPLIED OPTICS , 2024 , 63 (29) : 7682-7691 . |
| MLA | Chen, Can et al. "Chiral optical modulation of Si-Ge2Sb2Te5 2 Sb 2 Te 5 composite metasurfaces driven by quasi-bound states in the continuum" . | APPLIED OPTICS 63 . 29 (2024) : 7682-7691 . |
| APA | Chen, Can , Yu, Jinling , Kang, Chen , Chen, Yonghai , Lai, Yunfeng , Cheng, Shuying . Chiral optical modulation of Si-Ge2Sb2Te5 2 Sb 2 Te 5 composite metasurfaces driven by quasi-bound states in the continuum . | APPLIED OPTICS , 2024 , 63 (29) , 7682-7691 . |
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