Efficient,　accurate　and　comprehensive　measurement　of　photoelectric　thin　films　can　provide　in-depth　information　about　their　structural　properties,　electrical　and　optical　characteristics,　etc.,　which　plays　a　key　role　in　the　design　and　performance　optimization　of　devices.　Additionally,　the　detection　and　characterization　of　photoelectric　thin　film　also　provide　an　important　theoretical　basis　and　guidance　for　the　research　and　development　of　photoelectric　thin　film　materials　and　promote　the　technical　progress　and　application　expansion　in　the　field　of　photoelectric　devices,　which　is　of　great　academic　significance　and　application　value.　In　recent　years,　a　variety　of　new　detection　and　characterization　techniques　have　emerged,　but　there　are　a　few　related　reviews　of　the　literature,　which　makes　it　difficult　to　intuitively　understand　the　principles　of　the　latest　characterization　methods　and　their　specific　applications　in　the　optimization　of　device　performance.　In　this　paper,　the　basic　principles　and　characteristics　of　current　detection　and　characterization　techniques　of　photoelectric　thin　films　are　reviewed　based　on　the　three　dimensions　of　angle-resolved,　spatially-resolved　and　time-resolved,　and　the　application　progress　of　relevant　techniques　in　the　luminescence　characteristics,　visualization　of　spatial　heterogeneity　and　carrier　dynamics　of　photoelectric　thin　films　is　introduced.　Finally,　the　future　development　trends　of　photoelectric　thin　film　detection　and　characterization　technologies　are　discussed　and　anticipated.　©　2024　Chinese　Vacuum　Society.　All　rights　reserved.