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author:

Zhang, Haizhong (Zhang, Haizhong.) [1] (Scholars:张海忠) | Li, Jiayi (Li, Jiayi.) [2] | Ju, Xin (Ju, Xin.) [3] | Jiang, Jie (Jiang, Jie.) [4] | Wu, Jing (Wu, Jing.) [5] | Chi, Dongzhi (Chi, Dongzhi.) [6] | Ang, Diing Shenp (Ang, Diing Shenp.) [7] | Hu, Wei (Hu, Wei.) [8] | Wei, Rongshan (Wei, Rongshan.) [9] (Scholars:魏榕山) | Zhu, Minmin (Zhu, Minmin.) [10] (Scholars:朱敏敏) | Lu, Xiaoqiang (Lu, Xiaoqiang.) [11] (Scholars:卢孝强)

Indexed by:

EI Scopus SCIE

Abstract:

Significant advancements in artificial neural networks (ANNs) have driven the rapid progress of artificial intelligence and machine learning. While current feedforward neural networks primarily handle static data, recurrent neural networks (RNNs) are designed for dynamical systems. However, RNNs demand extensive training on specific tasks, limiting their scalability and affordability for edge computing. Physical reservoir computing (RC) offers an alternative approach by mapping inputs into high-dimensional states, allowing for pattern analysis within a fixed reservoir. Unlike RNNs, RC is well-suited for temporal and sequential data processing with rapid speed and low training costs. This makes RC suitable for hardware implementation across various research domains. Nonetheless, existing demonstrations of RC remain constrained to small-scale device arrays. As electronic synapse arrays aim to approach very large-scale and highly complex hardware as in the human brain, managing heat dissipation becomes a formidable challenge. In this work, we successfully developed the neuristors based on textured h-BN films, prepared using a CMOS-compatible technique, and constructed a physical RC system based on as-fabricated devices. Our approach leverages vertically aligned BN to provide aligned diffusion paths for the reproducible migration process of metal ions from the electrodes and offers a potential solution for thermal management in electronic devices. This achievement highlights the promising potential of our neuristors for future high-density and energy-efficient neuromorphic computing.

Keyword:

Boron nitride Highly textured High thermal conductivity Neuromorphic device Reservoir computing

Community:

  • [ 1 ] [Zhang, Haizhong]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350116, Peoples R China
  • [ 2 ] [Hu, Wei]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350116, Peoples R China
  • [ 3 ] [Wei, Rongshan]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350116, Peoples R China
  • [ 4 ] [Zhu, Minmin]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350116, Peoples R China
  • [ 5 ] [Lu, Xiaoqiang]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350116, Peoples R China
  • [ 6 ] [Li, Jiayi]Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
  • [ 7 ] [Ang, Diing Shenp]Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
  • [ 8 ] [Ju, Xin]Agcy Sci Technol & Res, Inst Mat Res & Engn, 2 Fusionopolis Way,Innovis 08-03, Singapore 138634, Singapore
  • [ 9 ] [Wu, Jing]Agcy Sci Technol & Res, Inst Mat Res & Engn, 2 Fusionopolis Way,Innovis 08-03, Singapore 138634, Singapore
  • [ 10 ] [Chi, Dongzhi]Agcy Sci Technol & Res, Inst Mat Res & Engn, 2 Fusionopolis Way,Innovis 08-03, Singapore 138634, Singapore
  • [ 11 ] [Jiang, Jie]Cent South Univ, Sch Phys, Hunan Key Lab Nanophoton & Devices, 932 South Lushan Rd, Changsha 410083, Hunan, Peoples R China

Reprint 's Address:

  • [Zhu, Minmin]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350116, Peoples R China;;[Ju, Xin]Agcy Sci Technol & Res, Inst Mat Res & Engn, 2 Fusionopolis Way,Innovis 08-03, Singapore 138634, Singapore;;

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Source :

CHEMICAL ENGINEERING JOURNAL

ISSN: 1385-8947

Year: 2024

Volume: 498

1 3 . 4 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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